Patents by Inventor Snorri T. Ingvarsson

Snorri T. Ingvarsson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetically lined conductors
    Patent number: 7250662
    Abstract: A conductor with improved magnetic field per current ratio is disclosed. The conductor includes a magnetic liner lining a second surface and sides thereof. The magnetic liner is preferably a super-paramagnet with high susceptibility or a ferromagnet with a microstructure where the size of the non-exchanged coupled micro domains is so small that their energy content is close to or small compared to kT that such films have super-paramagnetic properties and essentially behave like a paramagnet with high susceptibility.
    Type: Grant
    Filed: July 31, 2003
    Date of Patent: July 31, 2007
    Assignees: International Business Machines Corporation, Infineon Technologies North America Corporation
    Inventors: Snorri T. Ingvarsson, Rainer E. R. Leuschner, Yu Lu
  • Increased damping of magnetization in magnetic materials
    Patent number: 7192491
    Abstract: In order to dampen magnetization changes in magnetic devices, such as magnetic tunnel junctions (MTJ) used in high speed Magnetic Random Access Memory (MRAM), a transition metal selected from the 4d transition metals and 5d transition metals is alloyed into the magnetic layer to be dampened. In a preferred form, a magnetic permalloy layer is alloyed with osmium (Os) in an atomic concentration of between 4% and 15% of the alloy.
    Type: Grant
    Filed: July 15, 2002
    Date of Patent: March 20, 2007
    Assignee: International Business Machines Corporation
    Inventors: Snorri T. Ingvarsson, Roger H. Koch, Stuart S. Parkin, Gang Xiao
  • Increased damping of magnetization in magnetic materials
    Publication number: 20030029520
    Abstract: In order to dampen magnetization changes in magnetic devices, such as magnetic tunnel junctions (MTJ) used in high speed Magnetic Random Access Memory (MRAM), a transition metal selected from the 4d transition metals and 5d transition metals is alloyed into the magnetic layer to be dampened. In a preferred form, a magnetic permalloy layer is alloyed with osmium (Os) in an atomic concentration of between 4% and 15% of the alloy.
    Type: Application
    Filed: July 15, 2002
    Publication date: February 13, 2003
    Applicant: International Business Machines Corporation
    Inventors: Snorri T. Ingvarsson, Roger H. Koch, Stuart S.P. Parkin, Gang Xiao
  • Increased damping of magnetization in magnetic materials
    Patent number: 6452240
    Abstract: In order to dampen magnetization changes in magnetic devices, such as tunnel junctions (MTJ) used in high speed Magnetic Random Access Memory (MRAM), a transition metal selected from the 4d transition metals and 5d transition metals is alloyed into the magnetic layer to be dampened. In a preferred form, a magnetic permalloy layer is alloyed with osmium (Os) in an atomic concentration of between 4% and 15% of the alloy.
    Type: Grant
    Filed: October 30, 2000
    Date of Patent: September 17, 2002
    Assignee: International Business Machines Corporation
    Inventors: Snorri T. Ingvarsson, Roger H. Koch, Stuart S. Parkin, Gang Xiao