Abstract: A method for manufacturing a high quality annealed wafer which has both a uniform and high density bulk micro defect (BMD) in a bulk zone disposed between front and rear denuded zones (DZ), which increases the effect of gettering metal impurities such as Fe, Cu and etc., and which provides a defect free zone in the active region of device.

Abstract: A portable terminal includes a first body having input keys located on a front surface, and a second body having a display located on a front surface. Guides are separately located at each side of the second body, and a hinge structure is located at one end of the first body for coupling to the second body, such that the hinge structure is sized to be slidably received within the guides. In addition, a method of assembling a portable terminal includes locating input keys on a front surface of a first body, locating a display on a front surface of a second body, and forming a guide along two separate sides of the second body. The method also includes positioning a hinge structure at one end of the first body, coupling the first body to the second body using the hinge structure, and causing the hinge structure to be slidably received within the guides.

Abstract: A method by which a silicon wafer is prevented from increasing boron concentration near the surface and difference in the boron concentration does not arise between the surface of the annealed wafer and the silicon bulk to eliminate boron contamination in the silicon wafer caused by an annealing treatment is provided. The method includes, when annealing a silicon wafer having a surface on which a native oxide film has formed and boron of environmental origin or from chemical treatment prior to annealing has deposited, steps of carrying out temperature heat-up in a mixed gas atmosphere having a mixing ratio of hydrogen gas to inert gas of 5% to 100% so as to remove the boron-containing native oxide film, followed by annealing in an inert gas atmosphere.

Abstract: A method for manufacturing a high quality annealed wafer which has both a uniform and high density bulk micro defect (BMD) in a bulk zone disposed between front and rear denuded zones (DZ), which increases the effect of gettering metal impurities such as Fe, Cu and etc., and which provides a defect free zone in the active region of device.