Abstract: A method of fabricating a dual panel-type active matrix organic electroluminescent device includes patterning a first metal layer to form a gate electrode, a gate line, a power line, a gate pad, and a power pad on a first substrate, forming a first insulating layer on the first substrate to cover the gate electrode, the gate pad, and the power pad, forming a semiconductor layer on the first insulating layer over the gate electrode, the semiconductor layer including an active layer of undoped amorphous silicon and an ohmic contact layer of doped amorphous silicon, forming source and drain electrodes, a data line, a first link electrode, and a data pad, wherein the source and drain electrodes are disposed on the ohmic contact layer, wherein the data line, the data pad, and the first link electrode are disposed on the first insulating layer, and wherein the first link electrode crosses the gate line, forming a channel within the active layer by etching a portion of the ohmic contact exposed between the source an

Abstract: A dual panel-type active matrix organic electroluminescent device includes a gate line disposed along a first direction on a first substrate, a data line disposed along a second direction on the first substrate, a power line disposed along the second direction on the first substrate and spaced apart from the data line to define a pixel region with the gate and data lines, the power line and the gate line both formed of a same material during a same process, a switching thin film transistor disposed on the first substrate near a crossing of the gate and data lines, a driving thin film transistor disposed on the first substrate near a crossing of the gate and power lines, a connecting pattern within the pixel region on the first substrate formed of an insulating material, and a connecting electrode disposed within the pixel region on the first substrate to cover the connecting pattern and electrically interconnecting the driving thin film transistor to an organic electroluminescent diode.