Abstract: The simulation system for predicting heating and cooling loads of a building comprises the collection unit collecting measurement data of a target building from a BEMS, the identification unit identifying indoor and outdoor temperature, humidity, and insolation measured in the building in real time based on RTS method, the correlation derivation unit deriving a correlation between energy usage based on the BEMS measurement data collected by the collection unit and the cooling and heating loads according to indoor and outdoor temperature, humidity, and insolation identified by the identification unit, the simulation unit predicting a change in cooling and heating loads according to a change in at least one of pieces of measurement data based on the correlation derived from the correlation derivation unit to perform a simulation, and the information provision unit providing a simulation result from the simulation unit in a visible form to a user terminal.

Abstract: Provided is a method of improving skin condition by applying to the skin of a subject a cosmetic composition comprising black yeast-derived exosomes as an active ingredient and thereby improving the skin condition, particularly skin elasticity improvement, skin wrinkle reduction, skin texture improvement, skin tone improvement, skin brightness improvement, skin regeneration, skin moisturization, and/or whitening.

Abstract: A semiconductor device includes a gate electrode extending in a first direction, on a substrate, first outer spacers extending along side surfaces of the gate electrode, a first active pattern extending in a second direction, which intersects the first direction, to penetrate the gate electrode and the first outer spacers, epitaxial patterns on the first active pattern and on side surfaces of the first outer spacers, second outer spacers between the first outer spacers and the epitaxial patterns and inner spacers between the substrate and the first active pattern and between the gate electrode and the epitaxial patterns, wherein in a cross section that intersects the second direction, at least parts of the second outer spacers are on side surfaces of the first active pattern and side surfaces of the inner spacers.

Abstract: A semiconductor device includes a gate electrode extending in a first direction, on a substrate, first outer spacers extending along side surfaces of the gate electrode, a first active pattern extending in a second direction, which intersects the first direction, to penetrate the gate electrode and the first outer spacers, epitaxial patterns on the first active pattern and on side surfaces of the first outer spacers, second outer spacers between the first outer spacers and the epitaxial patterns and inner spacers between the substrate and the first active pattern and between the gate electrode and the epitaxial patterns, wherein in a cross section that intersects the second direction, at least parts of the second outer spacers are on side surfaces of the first active pattern and side surfaces of the inner spacers.