Abstract: A method for cleaning a silicon wafer includes (S11) cleaning surfaces of a silicon wafer using an SC-1 cleaning solution according to standard clean 1; (S12) rinsing the surfaces of the silicon wafer, cleaned in the step S11, using deionized water; (S13) cleaning the surfaces of the silicon wafer, rinsed in the step S12, using a cleaning solution including hydrochloric acid, ozone water and deionized water; (S14) rinsing the surfaces of the silicon wafer, cleaned in the step S13, using deionized water; and (S15) drying the surfaces of the silicon wafer, rinsed in the step S14. A stable oxide film is formed on the surfaces of the silicon wafer using a material having a strong oxidizing ability while a cleaning process is performed. Therefore, a problem that as time passes, external impurities are attached to the surfaces of the silicon wafer can be solved by a simple and safe process.

Abstract: The present invention relates to a method for cleaning a silicon wafer, including (S1) a first cleaning step for cleaning surfaces of a silicon wafer using an SC-1 cleaning solution according to standard clean 1; (S2) a second cleaning step for cleaning the surfaces of the silicon wafer, cleaned in the first cleaning step, using an SC-2 cleaning solution according to standard clean 2; (S3) a third cleaning step for cleaning the surfaces of the silicon wafer, cleaned in the second cleaning step, using a hydrogen fluoride (HF) solution; and (S4) a fourth cleaning step for cleaning the surfaces of the silicon wafer, cleaned in the third cleaning step, using an ozone water. The present invention removes effectively metallic impurities on the surfaces of the silicon wafer and improves the surface roughness of the silicon wafer, and thus is capable of providing a silicon wafer with a remarkably improved physical characteristic.

Abstract: A method by which a silicon wafer is prevented from increasing boron concentration near the surface and difference in the boron concentration does not arise between the surface of the annealed wafer and the silicon bulk to eliminate boron contamination in the silicon wafer caused by an annealing treatment is provided. The method includes, when annealing a silicon wafer having a surface on which a native oxide film has formed and boron of environmental origin or from chemical treatment prior to annealing has deposited, steps of carrying out temperature heat-up in a mixed gas atmosphere having a mixing ratio of hydrogen gas to inert gas of 5% to 100% so as to remove the boron-containing native oxide film, followed by annealing in an inert gas atmosphere.