Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.

Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.

Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

Abstract: A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of the substrate by using acid obtained from the acid source in the descum solution and removing the decomposed resist residues and the descum solution from the substrate.

Abstract: A method of forming fine patterns of a semiconductor device is provided. The method includes forming plural preliminary first mask patterns, which are spaced apart from each other by a first distance in a direction parallel to a surface of a substrate, on the substrate; forming an acid solution layer on the substrate to cover the plural preliminary first mask patterns; forming plural first mask patterns which are spaced apart from each other by a second distance larger than the first distance, of which upper and side portions are surrounded by acid diffusion regions having first solubility; exposing the first acid diffusion regions by removing the acid solution layer; forming a second mask layer having second solubility lower than the first solubility in spaces between the acid diffusion regions; and forming plural second mask patterns located between the plural first mask patterns, respectively, by removing the acid diffusion regions by the dissolvent.

Abstract: A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.

Abstract: In a method of forming a hole, an insulation layer is formed on a substrate, and a preliminary hole exposing the substrate is formed through the insulation layer. A photosensitive layer pattern including an organic polymer is then formed on the substrate to fill the preliminary hole. An etching gas including hydrogen fluoride (HF) or fluorine (F2) is then provided onto the photosensitive layer pattern to etch the insulation layer so that width of the preliminary hole is increased.

Abstract: A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of the substrate by using acid obtained from the acid source in the descum solution and removing the decomposed resist residues and the descum solution from the substrate.

Abstract: A method of manufacturing a semiconductor device includes forming a first mask pattern on a substrate by using a material including a polymer having a protection group de-protectable by an acid, the first mask pattern having a plurality of holes; forming a capping layer on an exposed surface of the first mask pattern, the capping layer including an acid source; diffusing the acid source into the first mask pattern so that the protection group becomes de-protectable from the polymer in the first mask pattern; forming a second mask layer on the capping layer, the second mask layer separate from the first mask pattern and filling the plurality of holes in the first mask pattern; and forming a plurality of second mask patterns in the plurality of holes by removing the capping layer and the first mask pattern.

Abstract: In a method of forming a hole, an insulation layer is formed on a substrate, and a preliminary hole exposing the substrate is formed through the insulation layer. A photosensitive layer pattern including an organic polymer is then formed on the substrate to fill the preliminary hole. An etching gas including hydrogen fluoride (HF) or fluorine (F2) is then provided onto the photosensitive layer pattern to etch the insulation layer so that width of the preliminary hole is increased.

Abstract: A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.

Abstract: A method of forming fine patterns of a semiconductor device is provided. The method includes forming plural preliminary first mask patterns, which are spaced apart from each other by a first distance in a direction parallel to a surface of a substrate, on the substrate; forming an acid solution layer on the substrate to cover the plural preliminary first mask patterns; forming plural first mask patterns which are spaced apart from each other by a second distance larger than the first distance, of which upper and side portions are surrounded by acid diffusion regions having first solubility; exposing the first acid diffusion regions by removing the acid solution layer; forming a second mask layer having second solubility lower than the first solubility in spaces between the acid diffusion regions; and forming plural second mask patterns located between the plural first mask patterns, respectively, by removing the acid diffusion regions by the dissolvent.