Patents by Inventor Soyeon CHOI

Soyeon CHOI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11968884
    Abstract: An organometallic compound represented by Formula 1A: wherein, in Formula 1A, groups and variables are the same as described in the specification.
    Type: Grant
    Filed: September 29, 2022
    Date of Patent: April 23, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jungin Lee, Kyuyoung Hwang, Soyeon Kim, Aram Jeon, Hyeonho Choi, Hyun Koo, Sangdong Kim, Yoonhyun Kwak, Ohyun Kwon, Byoungki Choi
  • Publication number: 20240115706
    Abstract: The present disclosure pertains to a GUCY2C-binding polypeptide and uses thereof and, specifically, to a GUCY2C-binding polypeptide, a fusion protein including same, a chimeric antigen receptor, an immune cell expressing the chimeric antigen receptor, and a use thereof for treatment and/or diagnosis of cancer.
    Type: Application
    Filed: April 7, 2022
    Publication date: April 11, 2024
    Applicant: LG CHEM, LTD.
    Inventors: Youngkyun KIM, Jung Youn SHIN, Yeongrim KO, Soyeon YANG, Beom Ju HONG, Eunhye CHOI, Nakyoung LEE
  • Patent number: 11937496
    Abstract: Provided is an organometallic compound represented by Formula 1, an organic light-emitting device including the same, and an electronic apparatus including the organic light-emitting device. Ir(L1)(L2)(L3)??Formula 1 L1 to L3 in Formula 1 are the same as described in the present specification.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: March 19, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soyeon Kim, Jiyoun Lee, Yongsuk Cho, Jongwon Choi, Dmitry Kravchuk, Banglin Lee, Yoonhyun Kwak, Hyun Koo, Seokhwan Hong
  • Patent number: 11812619
    Abstract: A resistive memory device includes a first conductive line extending in a first horizontal direction on a substrate, a plurality of second conductive lines separated from the first conductive line in a vertical direction and extending in a second horizontal direction intersecting with the first horizontal direction, on the substrate, a plurality of memory cells respectively connected between the first conductive line and one second conductive line selected from among the plurality of second conductive lines at a plurality of intersection points between the first conductive line and the plurality of second conductive lines, each of the plurality of memory cells including a selection device and a resistive memory pattern, and a bottom electrode shared by the plurality of memory cells, the bottom electrode having a variable thickness in the first horizontal direction, and including a top surface having a concave-convex shape.
    Type: Grant
    Filed: April 12, 2021
    Date of Patent: November 7, 2023
    Inventors: Jinwoo Lee, Zhe Wu, Dongsung Choi, Chungman Kim, Seunggeun Yu, Jabin Lee, Soyeon Choi
  • Publication number: 20220052113
    Abstract: A semiconductor device includes a lower insulating structure covering a circuit element on a semiconductor substrate and an upper structure on the lower insulating structure. The upper structure includes a memory cell structure between first and second conductive lines. The first conductive lines extend in a first horizontal direction, and the second conductive lines extend in a second horizontal direction. The memory cell structure includes at least three electrode patterns, a data storage material pattern, and a selector material pattern overlapping in a vertical direction. The selector material pattern includes a threshold switching material and a metal material. The threshold switching material includes germanium (Ge), arsenic (As), and selenium (Se), and the metal material includes at least one of tungsten (W), titanium (Ti), aluminum (Al), and copper (Cu). A content of the metal material is greater than 0 atomic % and less than 2 atomic %.
    Type: Application
    Filed: April 2, 2021
    Publication date: February 17, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jabin LEE, Zhe WU, Chungman KIM, Kwangmin PARK, Dongho AHN, Seunggeun YU, Jinwoo LEE, Soyeon CHOI
  • Publication number: 20220052116
    Abstract: A resistive memory device includes a first conductive line extending in a first horizontal direction on a substrate, a plurality of second conductive lines separated from the first conductive line in a vertical direction and extending in a second horizontal direction intersecting with the first horizontal direction, on the substrate, a plurality of memory cells respectively connected between the first conductive line and one second conductive line selected from among the plurality of second conductive lines at a plurality of intersection points between the first conductive line and the plurality of second conductive lines, each of the plurality of memory cells including a selection device and a resistive memory pattern, and a bottom electrode shared by the plurality of memory cells, the bottom electrode having a variable thickness in the first horizontal direction, and including a top surface having a concave-convex shape.
    Type: Application
    Filed: April 12, 2021
    Publication date: February 17, 2022
    Inventors: Jinwoo Lee, Zhe WU, Dongsung CHOI, Chungman KIM, Seunggeun YU, Jabin LEE, Soyeon CHOI
  • Publication number: 20170361930
    Abstract: The present disclosure relates to a flying vehicle comprising an annular hollow outer body having an outer circumferential open portion and an inner circumferential open portion; a blade system disposed in the outer body and configured to allow air flow from the outer circumferential open portion to the inner circumferential open portion; a first magnetic system configured to enable the blade system to be kept to have a clearance with the annular hollow outer body and to be kept in a floated state using a first magnetic force; a second magnetic system configured to allow the blade system to rotate using a second magnetic force; and a steering system configured to allow air discharged from the inner circumferential open portion via the blade system to flow upwardly or downwardly.
    Type: Application
    Filed: May 17, 2017
    Publication date: December 21, 2017
    Inventors: Kihyoun CHOI, Soyeon CHOI