Patents by Inventor So-yeon Shin

So-yeon Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices and methods of forming the same
    Patent number: 10748905
    Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: August 18, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-jin Lee, Sang-kwan Kim, Ji-eun Lee, Sung-hak Cho, Seok-hyang Kim, So-yeon Shin
  • SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
    Publication number: 20180331111
    Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.
    Type: Application
    Filed: July 12, 2018
    Publication date: November 15, 2018
    Inventors: Dong-jin Lee, Sang-kwan Kim, Ji-eun Lee, Sung-hak Cho, Seok-hyang Kim, So-yeon Shin
  • Semiconductor devices including a gate structure in a substrate
    Patent number: 10050038
    Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.
    Type: Grant
    Filed: October 21, 2016
    Date of Patent: August 14, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-jin Lee, Sang-kwan Kim, Ji-eun Lee, Sung-hak Cho, Seok-hyang Kim, So-yeon Shin
  • SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
    Publication number: 20170365608
    Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.
    Type: Application
    Filed: October 21, 2016
    Publication date: December 21, 2017
    Inventors: Dong-jin Lee, Sang-kwan Kim, Ji-eun Lee, Sung-hak Cho, Seok-hyang Kim, So-yeon Shin