Abstract: A display device includes a substrate that includes a display area and a non-display area, a display element layer disposed on the display area of the substrate, an opposing substrate that faces the substrate and the display element layer, a sealing member disposed on the non-display area and that couples the substrate and the opposing substrate, and a filler disposed between the substrate and the opposing substrate. A thickness of the filler varies in the range of 60% to 400% of a thickness of the sealing member.

Abstract: Disclosed is a light emitting device comprising a plurality of light emitting cells, and a bridge electrode electrically connecting two adjacent light emitting cells, and the plurality of light emitting cells comprise a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, a first electrode on the first conductive semiconductor layer and a second electrode on the second conductive semiconductor layer, wherein the bridge electrode has a part thicker than the first electrode and the second electrode.

Abstract: Disclosed herein is a light emitting device exhibiting improved current spreading. The disclosed light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type and second conductivity type semiconductor layers, a first electrode disposed on the first conductivity type semiconductor layer, and a second electrode disposed on the second conductivity type semiconductor layer. The light emitting structure includes a mesa etching region where the second conductivity type semiconductor layer, active layer, and first conductivity type semiconductor layer are partially etched, thereby exposing a portion of the first conductivity type semiconductor layer. The first electrode is disposed on the exposed portion of the first conductivity type semiconductor layer.

Abstract: Disclosed herein is a light emitting device exhibiting improved current spreading. The disclosed light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type and second conductivity type semiconductor layers, a first electrode disposed on the first conductivity type semiconductor layer, and a second electrode disposed on the second conductivity type semiconductor layer. The light emitting structure includes a mesa etching region where the second conductivity type semiconductor layer, active layer, and first conductivity type semiconductor layer are partially etched, thereby exposing a portion of the first conductivity type semiconductor layer. The first electrode is disposed on the exposed portion of the first conductivity type semiconductor layer.

Abstract: Disclosed herein is a light emitting device exhibiting improved current spreading. The disclosed light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type and second conductivity type semiconductor layers, a first electrode disposed on the first conductivity type semiconductor layer, and a second electrode disposed on the second conductivity type semiconductor layer. The light emitting structure includes a mesa etching region where the second conductivity type semiconductor layer, active layer, and first conductivity type semiconductor layer are partially etched, thereby exposing a portion of the first conductivity type semiconductor layer. The first electrode is disposed on the exposed portion of the first conductivity type semiconductor layer.

Abstract: Disclosed is a light emitting device comprising a plurality of light emitting cells, and a bridge electrode electrically connecting two adjacent light emitting cells, and the plurality of light emitting cells comprise a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, a first electrode on the first conductive semiconductor layer and a second electrode on the second conductive semiconductor layer, wherein the bridge electrode has a part thicker than the first electrode and the second electrode.

Abstract: Disclosed herein is a light emitting device exhibiting improved current spreading. The disclosed light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type and second conductivity type semiconductor layers, a first electrode disposed on the first conductivity type semiconductor layer, and a second electrode disposed on the second conductivity type semiconductor layer. The light emitting structure includes a mesa etching region where the second conductivity type semiconductor layer, active layer, and first conductivity type semiconductor layer are partially etched, thereby exposing a portion of the first conductivity type semiconductor layer. The first electrode is disposed on the exposed portion of the first conductivity type semiconductor layer.