Abstract: A positive electrode for a lithium secondary battery includes a positive electrode collector, a first positive electrode active material layer formed on the positive electrode collector and includes a first positive electrode active material, and a second positive electrode active material layer formed on the first positive electrode active material layer and includes a second positive electrode active material. The first positive electrode active material and the second positive electrode active material include a lithium nickel-cobalt-based oxide in which an amount of nickel among total metallic components excluding lithium is 80 atm % or more, the first positive electrode active material has a molar ratio of nickel to cobalt of 18 or more, and the second positive electrode active material has a molar ratio of nickel to cobalt of less than 18.

Abstract: The present invention relates to a pharmaceutical composition for diagnosing and treating prostate cancer, capable of targeting PSMA, and a compound provided by one aspect of the present invention has a glutamine-urea-lysine compound to which a radioactive metal-coupled chelator is structurally coupled and to which an aryl group that can additionally bind to PSMA protein is coupled. Coupling between the glutamine-urea-lysine compound and the chelator includes a polar spacer so as to serve the role of reducing in vivo nonspecific coupling and exhibit an effect of being rapidly removed from vital organs, but not from prostate cancer. These characteristics lower the radiation exposure, which is caused by a therapeutic radioisotope-coupled compound, to normal tissue and organs, and thus reduce side effects. In addition, a compound that contains a phenyl group having a coupling force with albumin has an increased residence time in the blood, thereby becoming more accumulated in prostate cancer.

Abstract: A positive electrode active material for a lithium secondary battery comprising lithium transition metal oxide particles having a core-shell structure which includes a core portion and a shell portion disposed on a surface of the core portion. Wherein, the average crystallite size of the core portion is smaller than an average crystallite size of the shell portion and an amount of nickel among total transition metals included in the core portion and the shell portion is 80 atm % or more. A positive electrode active material, which suppresses decomposition of an electrolyte solution and occurrence of micro cracks of the positive electrode active material during charge and discharge by forming an average crystallite size of a core portion of the high-nickel positive electrode active material smaller than an average crystallite size of a shell portion, and a method of preparing the same.

Abstract: A three-dimensional semiconductor device includes: a peripheral circuit structure disposed on a lower substrate, and including an internal peripheral pad portion; an upper substrate disposed on the peripheral circuit structure; a stack structure disposed on the upper substrate, and including gate horizontal patterns; a vertical channel structure passing through the stack structure in a first region on the upper substrate; a first vertical support structure passing through the stack structure in a second region on the upper substrate; and an internal peripheral contact structure passing through the stack structure and the upper substrate, and electrically connected to the internal peripheral pad portion, wherein an upper surface of the first vertical support structure is disposed on a different level from an upper surface of the vertical channel structure, and is coplanar with an upper surface of the internal peripheral contact structure.

Abstract: A three-dimensional semiconductor device includes: a peripheral circuit structure disposed on a lower substrate, and including an internal peripheral pad portion; an upper substrate disposed on the peripheral circuit structure; a stack structure disposed on the upper substrate, and including gate horizontal patterns; a vertical channel structure passing through the stack structure in a first region on the upper substrate; a first vertical support structure passing through the stack structure in a second region on the upper substrate; and an internal peripheral contact structure passing through the stack structure and the upper substrate, and electrically connected to the internal peripheral pad portion, wherein an upper surface of the first vertical support structure is disposed on a different level from an upper surface of the vertical channel structure, and is coplanar with an upper surface of the internal peripheral contact structure.

Abstract: A three-dimensional semiconductor device includes: a peripheral circuit structure disposed on a lower substrate, and including an internal peripheral pad portion; an upper substrate disposed on the peripheral circuit structure; a stack structure disposed on the upper substrate, and including gate horizontal patterns; a vertical channel structure passing through the stack structure in a first region on the upper substrate; a first vertical support structure passing through the stack structure in a second region on the upper substrate; and an internal peripheral contact structure passing through the stack structure and the upper substrate, and electrically connected to the internal peripheral pad portion, wherein an upper surface of the first vertical support structure is disposed on a different level from an upper surface of the vertical channel structure, and is coplanar with an upper surface of the internal peripheral contact structure.

Abstract: A three-dimensional semiconductor device includes: a peripheral circuit structure disposed on a lower substrate, and including an internal peripheral pad portion; an upper substrate disposed on the peripheral circuit structure; a stack structure disposed on the upper substrate, and including gate horizontal patterns; a vertical channel structure passing through the stack structure in a first region on the upper substrate; a first vertical support structure passing through the stack structure in a second region on the upper substrate; and an internal peripheral contact structure passing through the stack structure and the upper substrate, and electrically connected to the internal peripheral pad portion, wherein an upper surface of the first vertical support structure is disposed on a different level from an upper surface of the vertical channel structure, and is coplanar with an upper surface of the internal peripheral contact structure.

Abstract: The present invention relates to a herbal drug composition for cartilage protection comprising plant extracts of Clematis Radix, Trichosanthis Radix, and Prunellae Spica and an optimal content of rosmarinic acid to: (i) alleviate pains; (ii) inhibit the acute/chronic inflammation, platelet/whole blood aggregation, immunocyte (B-lymphcyte and T-lymphcyte) proliferation, inflammation-inducing enzyme activities, and enzyme activities associated with degradation of joint tissue; (iii) scavenge activity of toxic active oxygen radicals; and (iv) further provide excellent cartilage protection activity to be effectively used as an anti-inflammatory agent with analgesic effects, blood circulation enhancer, arthritis therapeutic agent and cartilage protective.

Abstract: The present invention relates to a herbal drug composition for cartilage protection comprising plant extracts of Clematis Radix, Trichosanthis Radix, and Prunellae Spica and an optimal content of rosmarinic acid to: (i) alleviate pains; (ii) inhibit the acute/chronic inflammation, platelet/whole blood aggregation, immunocyte (B-lymphcyte and T-lymphcyte) proliferation, inflammation-inducing enzyme activities, and enzyme activities associated with degradation of joint tissue; (iii) scavenge activity of toxic active oxygen radicals; and (iv) further provide excellent cartilage protection activity to be effectively used as an anti-inflammatory agent with analgesic effects, blood circulation enhancer, arthritis therapeutic agent and cartilage protective.

Abstract: The present invention relates to a herbal drug composition for cartilage protection comprising plant extracts of Clematis Radix, Trichosanthis Radix, and Prunellae Spica and an optimal content of rosmarinic acid to: (i) alleviate pains; (ii) inhibit the acute/chronic inflammation, platelet/whole blood aggregation, immunocyte (B-lymphcyte and T-lymphcyte) proliferation, inflammation-inducing enzyme activities, and enzyme activities associated with degradation of joint tissue; (iii) scavenge activity of toxic active oxygen radicals; and (iv) further provide excellent cartilage protection activity to be effectively used as an anti-inflammatory agent with analgesic effects, blood circulation enhancer, arthritis therapeutic agent and cartilage protective.