Abstract: A continuous thin film comprises a metal chalcogenide, wherein the metal is selected from the periodic groups 13 or 14 and the chalcogen is: sulphur (S), selenide (Se), or tellurium (Te), and wherein the thin film has a thickness of less than 20 mm. Methods of forming the continuous thin film involve thermally evaporating precursors to form a thin film on the surface of a substrate. In a particular embodiment, molecular beam epitaxy (MBE) is used to grow indium selenide (In2Se3) thin film from two precursors (In2Se3 and Se) and the thin film is used to fabricate a ferroelectric resistive memory device.

Abstract: A microelectronic device includes a stack structure comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. At least one pillar extends through the stack structure. The at least one pillar includes at least one insulative material and a channel structure horizontally surrounding the at least one insulative material. The at least one channel structure comprises sub-regions of semiconductor material. At least one of the sub-regions exhibits a different microstructure than at least one other of the sub-regions. Additional microelectronic devices are also disclosed, as are related methods and electronic systems.

Abstract: There is provided a continuous thin film comprising a metal chalcogenide, wherein the metal is selected from the periodic groups 13 or 14 and the chalcogen is: sulphur (S), selenide (Se), or tellurium (Te), and wherein the thin film has a thickness of less than 20 nm. There is also provided a method of forming the continuous thin film. In a particular embodiment, molecular beam epitaxy (MBE) is used to grow indium selenide (In2Se3) thin film from two precursors (In2Se3 and Se) and said thin film is used to fabricate a ferroelectric resistive memory device.