Patents by Inventor Socrates T. Pantelides

Socrates T. Pantelides has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects
    Patent number: 7727340
    Abstract: In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia.
    Type: Grant
    Filed: June 8, 2007
    Date of Patent: June 1, 2010
    Assignees: Vanderbilt University, Auburn University
    Inventors: Gilyong Y. Chung, Chin-Che Tin, John R. Williams, Kyle McDonald, Massimiliano De Ventra, Robert A. Weller, Socrates T. Pantelides, Leonard C. Feldman
  • Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects
    Publication number: 20080128709
    Abstract: In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia. In another aspect, the present invention provides a silicon carbide semiconductor device that has a 4H-silicon carbide substrate, a layer of silicon dioxide disposed on the 4H-silicon carbide substrate and a region of substantial nitrogen concentration at the silicon dioxide/silicon carbide interface.
    Type: Application
    Filed: June 8, 2007
    Publication date: June 5, 2008
    Applicants: Vanderbilt University, Auburn University
    Inventors: Gilyong Chung, Chin-Che Tin, John R. Williams, Kyle McDonald, Massimiliano De Ventra, Robert A. Weller, Socrates T. Pantelides, Leonard C. Feldman
  • Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects
    Patent number: 7235438
    Abstract: In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia. In another aspect, the present invention provides a silicon carbide semiconductor device that has a 4H-silicon carbide substrate, a layer of silicon dioxide disposed on the 4H-silicon carbide substrate and a region of substantial nitrogen concentration at the silicon dioxide/silicon carbide interface.
    Type: Grant
    Filed: May 5, 2005
    Date of Patent: June 26, 2007
    Assignees: Vanderbilt University, Auburn University
    Inventors: Gilyong Chung, Chin-Che Tin, John R. Williams, Kyle McDonald, Massimiliano Di Ventra, Robert A. Weller, Socrates T. Pantelides, Leonard C. Feldman