Patents by Inventor Sodonie Lefebvre

Sodonie Lefebvre has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating submicron suspended objects and application to the mechanical characterization of said objects
    Patent number: 7754506
    Abstract: A method of fabricating submicron objects that includes the following steps: depositing a void layer on a support, depositing a transfer layer on the void layer, producing the objects in the transfer layer, producing a hard mask on a portion of the transfer layer to delimit a region comprising a portion of the objects, and etching the combination formed by the hard mask, the transfer layer and the void layer to eliminate the hard mask and the portion of the transfer layer in the region and to open up the portion of the void layer under the region so that the objects are suspended, the rate of etching the void layer being greater than the rate of etching the transfer layer and the hard mask.
    Type: Grant
    Filed: June 15, 2006
    Date of Patent: July 13, 2010
    Assignee: Altis Semiconductor
    Inventors: Pierre Vekeman, Sodonie Lefebvre, Thierry Hoc, Pascal Deconinck
  • Method of fabricating submicron suspended objects and application to the mechanical characterization of said objects
    Publication number: 20070031984
    Abstract: A method of fabricating submicron objects that includes the following steps: depositing a void layer on a support, depositing a transfer layer on the void layer, producing the objects in the transfer layer, producing a hard mask on a portion of the transfer layer to delimit a region comprising a portion of the objects, and etching the combination formed by the hard mask, the transfer layer and the void layer to eliminate the hard mask and the portion of the transfer layer in the region and to open up the portion of the void layer under the region so that the objects are suspended, the rate of etching the void layer being greater than the rate of etching the transfer layer and the hard mask.
    Type: Application
    Filed: June 15, 2006
    Publication date: February 8, 2007
    Inventors: Pierre Vekeman, Sodonie Lefebvre, Thierry Hoc, Pascal Deconinck