Patents by Inventor Soenke Pirk

Soenke Pirk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device, microphone and methods for forming a semiconductor device
    Patent number: 11352253
    Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: June 7, 2022
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Markus Kahn, Anna-Katharina Kaiser, Soenke Pirk, Juergen Steinbrenner, Julia-Magdalena Straeussnigg
  • Semiconductor Device, Microphone and Methods for Forming a Semiconductor Device
    Publication number: 20210002132
    Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.
    Type: Application
    Filed: September 17, 2020
    Publication date: January 7, 2021
    Inventors: Markus Kahn, Anna-Katharina Kaiser, Soenke Pirk, Juergen Steinbrenner, Julia-Magdalena Straeussnigg
  • Semiconductor device, microphone and methods for forming a semiconductor device
    Patent number: 10858246
    Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: December 8, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Markus Kahn, Anna-Katharina Kaiser, Soenke Pirk, Juergen Steinbrenner, Julia-Magdalena Straeussnigg
  • MEMS device and method for producing a MEMS device
    Patent number: 10405099
    Abstract: A MEMS device is provided. The MEMS device includes a membrane, and at least one electrode arranged at a distance from the membrane. The at least one electrode includes a layer stack. The layer stack includes a first insulation layer, a first conductive layer arranged thereabove, a second insulation layer arranged thereabove, a second conductive layer arranged thereabove, and a third insulation layer arranged thereabove.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: September 3, 2019
    Assignee: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Stefan Jost, Wolfgang Friza, Stefan Geissler, Soenke Pirk
  • SEMICONDUCTOR DEVICE, MICROPHONE AND METHODS FOR FORMING A SEMICONDUCTOR DEVICE
    Publication number: 20180237292
    Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.
    Type: Application
    Filed: February 21, 2018
    Publication date: August 23, 2018
    Inventors: Markus Kahn, Anna-Katharina Kaiser, Soenke Pirk, Juergen Steinbrenner, Julia-Magdalena Straeussnigg
  • MEMS DEVICE AND METHOD FOR PRODUCING A MEMS DEVICE
    Publication number: 20180152793
    Abstract: A MEMS device is provided. The MEMS device includes a membrane, and at least one electrode arranged at a distance from the membrane. The at least one electrode includes a layer stack. The layer stack includes a first insulation layer, a first conductive layer arranged thereabove, a second insulation layer arranged thereabove, a second conductive layer arranged thereabove, and a third insulation layer arranged thereabove.
    Type: Application
    Filed: November 30, 2017
    Publication date: May 31, 2018
    Inventors: Stefan JOST, Wolfgang FRIZA, Stefan GEISSLER, Soenke PIRK
  • Method for manufacturing a plurality of microphone structures, microphone and mobile device
    Patent number: 9439017
    Abstract: In various embodiments, a method for manufacturing microphone structures is provided.
    Type: Grant
    Filed: February 10, 2014
    Date of Patent: September 6, 2016
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Ursula Hedenig, Daniel Maurer, Thomas Grille, Peter Irsigler, Soenke Pirk, Andre Brockmeier
  • METHOD FOR MANUFACTURING A PLURALITY OF MICROPHONE STRUCTURES, MICROPHONE AND MOBILE DEVICE
    Publication number: 20150230039
    Abstract: In various embodiments, a method for manufacturing microphone structures is provided.
    Type: Application
    Filed: February 10, 2014
    Publication date: August 13, 2015
    Applicant: Infineon Technologies AG
    Inventors: Ursula Hedenig, Daniel Maurer, Thomas Grille, Peter Irsigler, Soenke Pirk, Andre Brockmeier
  • Method for manufacturing a MEMS device and MEMS device
    Patent number: 9061896
    Abstract: A method for manufacturing a MEMS device includes providing a cavity within a layer adjacent to a sacrificial layer. The cavity extends to the sacrificial layer and includes a capillary slot protruding into the layer. The sacrificial layer is removed by exposing the sacrificial layer to an etching agent that is introduced through the cavity.
    Type: Grant
    Filed: August 26, 2013
    Date of Patent: June 23, 2015
    Assignee: Infineon Technologies AG
    Inventors: Alfons Dehe, Christoph Glacer, Soenke Pirk
  • Method for Manufacturing a MEMS Device and MEMS Device
    Publication number: 20150054097
    Abstract: A method for manufacturing a MEMS device includes providing a cavity within a layer adjacent to a sacrificial layer. The cavity extends to the sacrificial layer and includes a capillary slot protruding into the layer. The sacrificial layer is removed by exposing the sacrificial layer to an etching agent that is introduced through the cavity.
    Type: Application
    Filed: August 26, 2013
    Publication date: February 26, 2015
    Inventors: Alfons Dehe, Christoph Glacer, Soenke Pirk