Patents by Inventor Soeren Jansen

Soeren Jansen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile transistor element including a buried ferroelectric material based storage mechanism
    Patent number: 10176859
    Abstract: The present disclosure provides storage elements, such as storage transistors, wherein at least one storage mechanism is provided on the basis of a ferroelectric material formed in the buried insulating layer of an SOI transistor architecture. In further illustrative embodiments, one further storage mechanism is implemented in the gate electrode structure, thereby providing increased overall information density. In some illustrative embodiments, the storage mechanism in the gate electrode structure is provided in the form of a ferroelectric material.
    Type: Grant
    Filed: May 3, 2017
    Date of Patent: January 8, 2019
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Stefan Duenkel, Ralf Illgen, Ralf Richter, Soeren Jansen
  • NON-VOLATILE TRANSISTOR ELEMENT INCLUDING A BURIED FERROELECTRIC MATERIAL BASED STORAGE MECHANISM
    Publication number: 20180322912
    Abstract: The present disclosure provides storage elements, such as storage transistors, wherein at least one storage mechanism is provided on the basis of a ferroelectric material formed in the buried insulating layer of an SOI transistor architecture. In further illustrative embodiments, one further storage mechanism is implemented in the gate electrode structure, thereby providing increased overall information density. In some illustrative embodiments, the storage mechanism in the gate electrode structure is provided in the form of a ferroelectric material.
    Type: Application
    Filed: May 3, 2017
    Publication date: November 8, 2018
    Inventors: Stefan Duenkel, Ralf Illgen, Ralf Richter, Soeren Jansen