Abstract: A silicon-based quantum device is provided. The device comprises: a first metallic structure (501); a second metallic structure (502) laterally separated from the first metallic structure; and an L-shaped elongate channel (520) defined by the separation between the first and second metallic structures; wherein the elongate channel has a vertex (505) connecting two elongate parts of the elongate channel. The device further comprises: a third metallic structure (518), mediator gate, positioned in the elongate channel; a fourth metallic structure (531) forming a first barrier gate, arranged at a first end of the third metallic structure; and a fifth metallic structure (532) forming a second barrier gate arranged at a second end of the third metallic structure. The first, second, third, fourth and fifth metallic structures are configured for connection to first, second, third, fourth and fifth electric potentials respectively.

Abstract: A silicon-based quantum device is provided. The device comprises: a first metallic structure (501); a second metallic structure (502) laterally separated from the first metallic structure; and an L-shaped elongate channel (520) defined by the separation between the first and second metallic structures; wherein the elongate channel has a vertex (505) connecting two elongate parts of the elongate channel. The device further comprises: a third metallic structure (518), mediator gate, positioned in the elongate channel; a fourth metallic structure (531) forming a first barrier gate, arranged at a first end of the third metallic structure; and a fifth metallic structure (532) forming a second barrier gate arranged at a second end of the third metallic structure. The first, second, third, fourth and fifth metallic structures are configured for connection to first, second, third, fourth and fifth electric potentials respectively.

Abstract: A method for performing quantum computations in a qubit processor is provided, comprising the steps of: configuring a first location 843 in a first set of locations 802 to perform 902 a first one-qubit operation; configuring a second location 844 in the first set of locations 802 to perform 902 a second one-qubit operation; configuring a first location 845 and a second location 846 in a second set of locations 803 to enable 906 a two-qubit interaction; receiving 901 a first qubit 831 at the first location 843 in the first set of locations 802 at time t1; receiving 901 a second qubit 832 at the second location 844 in the first set of locations 802 at time t1; wherein the first qubit and the second qubit are provided within a first qubit group comprising n qubits, wherein n>2; performing 902 the first one-qubit operation on the state of the first qubit 831 at the first location 843 in the first set of locations 802; performing 902 the second one-qubit operation on the state of the second qubit 832 at the sec

Abstract: A device for quantum information processing is disclosed herein. According to examples, the device comprises a first plurality of confinement regions for confining spinful charge carriers for use as data qudits. The device further comprises a second plurality of confinement regions for confining spinful charge carriers for use as ancillary qudits, each confinement region of the second plurality of confinement regions couplable to measurement apparatus for measuring an ancillary qudit. The device further comprises a third plurality of confinement regions for confining spinful charge carriers, each confinement region of the third plurality of confinement regions situated between a first confinement region of the first plurality of confinement regions and a second confinement region of the second plurality of confinement regions and for use in mediating interactions between a data qudit of the first confinement region and an ancillary qudit of the second confinement region.

Abstract: Methods are disclosed for controlling charge stability in a device for quantum information processing. According to examples, a device for quantum information processing comprises a first plurality of confinement regions confining spinful charge carriers for use as audits. The device further comprises a second plurality of confinement regions confining spinful charge carriers, each confinement region of the second plurality of confinement regions adjacent to a confinement region of the first plurality of confinement regions. The device further comprises one or more charge reservoirs, wherein each confinement region of the second plurality of confinement regions is attachable to a charge reservoir.