Patents by Inventor Sofiane BEN MBAREK

Sofiane BEN MBAREK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230057869
    Abstract: A method for measuring a magnetic field with a micro-sensor system includes applying a direct current (ITh) to a curved micro-beam to control a stiffness of the curved micro-beam; placing the micro-sensor system into an external magnetic field (B); selecting with a controller, based on an expected value of the external magnetic field (B), a given resonant frequency of the micro-beam; measuring with a resonant frequency tracking device the given resonant frequency of the micro-beam; and calculating in the controller the external magnetic field (B), based on (1) the measured resonant frequency, (2) the applied current (ITh), and (3) calibration data stored in the controller. The calibration data is indicative of a dependency between a change of the selected resonant frequency and the external magnetic field.
    Type: Application
    Filed: December 21, 2020
    Publication date: February 23, 2023
    Inventors: Nouha ALCHEIKH, Sofiane BEN MBAREK, Mohammad YOUNIS
  • Patent number: 9096427
    Abstract: Method for making at least one first suspended part of a microelectronic or nanoelectronic structure from a monolithic part of a first substrate, the method comprising the following steps: make a first etching with a first given depth in the monolithic substrate to define the suspended part, deposit a protective layer on at least the side edges of the first etching, make a second etching with a second depth in the first etching, make a physicochemical treatment of at least part of the zone located under the suspended structure so as to modify it, and release the suspended part by removal of the physicochemically treated part.
    Type: Grant
    Filed: May 23, 2014
    Date of Patent: August 4, 2015
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Sofiane Ben Mbarek, Sophie Giroud, Frederic-Xavier Gaillard
  • Publication number: 20140357006
    Abstract: Method for making at least one first suspended part of a microelectronic or nanoelectronic structure from a monolithic part of a first substrate, the method comprising the following steps: make a first etching with a first given depth in the monolithic substrate to define the suspended part, deposit a protective layer on at least the side edges of the first etching, make a second etching with a second depth in the first etching, make a physicochemical treatment of at least part of the zone located under the suspended structure so as to modify it, and release the suspended part by removal of the physicochemically treated part.
    Type: Application
    Filed: May 23, 2014
    Publication date: December 4, 2014
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Sofiane BEN MBAREK, Sophie Giroud, Frederic-Xavier Gaillard