Abstract: An object is to provide a magnetic recording medium having favorable crystal orientation characteristics and exhibiting a high SNR. The present technology provides a magnetic recording medium having a layer structure including a recording layer, a ground layer, and a base layer in this order, in which the ground layer includes a first ground layer on the recording layer side and a second ground layer on the base layer side, the first ground layer contains a nonmagnetic oxide, the first ground layer has a thickness of 2 nm or more and 10 nm or less, and the second ground layer has a thickness of 40 nm or more. Furthermore, the present technology also provides a magnetic recording cartridge including the magnetic recording medium.

Abstract: To provide a magnetic recording tape and the like that have excellent magnetic properties and exhibit a favorable SNR. There are provided a magnetic recording tape and the like including at least: a base layer that includes a long film having flexibility; and a magnetic layer formed on a side of one main surface of the base layer, in which an under layer and a seed layer are provided in the stated order from a side of the magnetic layer toward a side of the base layer between the magnetic layer and the base layer, the underlayer contains at least Co and Cr, and has an average atomic number ratio represented by the following formula (1): Co(100-y)Cry (where y is within a range of 37?y?45.), and the seed layer formed directly on the base layer has a film thickness of 5 nm or more and 30 nm or less, and contains Ti and O and has an average atomic number ratio represented by the following formula (2): Ti(100-x)Ox (where x?10.

Abstract: To provide a magnetic recording tape and the like that have excellent magnetic properties and exhibit a favorable SNR. There are provided a magnetic recording tape and the like including at least: a base layer that includes a long film having flexibility; and a magnetic layer formed on a side of one main surface of the base layer, in which an under layer and a seed layer are provided in the stated order from a side of the magnetic layer toward a side of the base layer between the magnetic layer and the base layer, the underlayer contains at least Co and Cr, and has an average atomic number ratio represented by the following formula (1): Co(100-y)Cry (where y is within a range of 37?y?45.), and the seed layer formed directly on the base layer has a film thickness of 5 nm or more and 30 nm or less, and contains Ti and O and has an average atomic number ratio represented by the following formula (2): Ti(100-x)Ox (where x?10.