Abstract: Embodiments described herein include an apparatus comprising a semiconductor-based photodiode disposed on a semiconductor layer, and an optical waveguide spaced apart from the semiconductor layer and evanescently coupled with a depletion region of the photodiode. The photodiode may be arranged as a vertical photodiode or a lateral photodiode.

Abstract: The embodiments of the present disclosure describe a stressed Ge PD and fabrications techniques for making the same. In one embodiment, a stressor material is deposited underneath an already formed Ge PD. To do so, wafer bonding can be used to bond the wafer containing the Ge PD to a second, handler wafer. Doing so provides support to remove the substrate of the wafer so that a stressor material (e.g., silicon nitride, diamond-like carbon, or silicon-germanium) can be disposed underneath the Ge PD. The stress material induces a stress or strain in the crystal lattice of the Ge which changes its bandgap and improves its responsivity.

Abstract: The embodiments of the present disclosure describe a stressed Ge PD and fabrications techniques for making the same. In one embodiment, a stressor material is deposited underneath an already formed Ge PD. To do so, wafer bonding can be used to bond the wafer containing the Ge PD to a second, handler wafer. Doing so provides support to remove the substrate of the wafer so that a stressor material (e.g., silicon nitride, diamond-like carbon, or silicon-germanium) can be disposed underneath the Ge PD. The stress material induces a stress or strain in the crystal lattice of the Ge which changes its bandgap and improves its responsivity.

Abstract: The embodiments of the present disclosure describe a stressed Ge PD and fabrications techniques for making the same. In one embodiment, a stressor material is deposited underneath an already formed Ge PD. To do so, wafer bonding can be used to bond the wafer containing the Ge PD to a second, handler wafer. Doing so provides support to remove the substrate of the wafer so that a stressor material (e.g., silicon nitride, diamond-like carbon, or silicon-germanium) can be disposed underneath the Ge PD. The stress material induces a stress or strain in the crystal lattice of the Ge which changes its bandgap and improves its responsivity.

Abstract: An athermal optical waveguide structure such as an optical add drop multiplexer (OADM) or the like is fabricated by a method that includes forming a lower cladding layer on a substrate. A waveguiding core layer is formed on the lower cladding layer. An upper cladding layer is formed on the waveguiding core layer and the lower cladding layer a sol-gel material. The sol-gel material includes an organically modified siloxane and a metal oxide. A thermo-optic coefficient of the sol-gel material is adjusted by curing the sol-gel material for a selected duration of time at a selected temperature such that the thermo-optic coefficient of the sol-gel material compensates for a thermo-optic coefficient of at least the waveguiding core layer such that an effective thermo-optic coefficient of the optical waveguide structure at a specified optical wavelength and over a specified temperature range is reduced.

Abstract: Embodiments described herein include an apparatus comprising a semiconductor-based photodiode disposed on a semiconductor layer, and an optical waveguide spaced apart from the semiconductor layer and evanescently coupled with a depletion region of the photodiode. The photodiode may be arranged as a vertical photodiode or a lateral photodiode.

Abstract: Copolymerization of elemental sulfur with functional comonomers afford sulfur copolymers having a high molecular weight and high sulfur content. Nucleophilic activators initiate sulfur polymerizations at relative lower temperatures and in solutions, which enable the use of a wider range of comonomers, such as vinylics, styrenics, and non-homopolymerizing comonomers. Nucleophilic activators promote ring-opening reactions to generate linear polysulfide intermediates that copolymerize with comonomers. Dynamic sulfur-sulfur bonds enable re-processing or melt processing of the sulfur polymer. Chalcogenide-based copolymers have a refractive index of about 1.7-2.6 at a wavelength in a range of about 5000 nm-8????. The sulfur copolymer can be a thermoplastic or a thermoset for use in elastomers, resins, lubricants, coatings, antioxidants, cathode materials for electrochemical cells, dental adhesives/restorations, and polymeric articles such as polymeric films and free-standing substrates.

Abstract: Embodiments described herein include an apparatus comprising a semiconductor-based photodiode disposed on a semiconductor layer, and an optical waveguide spaced apart from the semiconductor layer and evanescently coupled with a depletion region of the photodiode. The photodiode may be arranged as a vertical photodiode or a lateral photodiode.

Abstract: Embodiments described herein include an apparatus comprising a semiconductor-based photodiode disposed on a semiconductor layer, and an optical waveguide spaced apart from the semiconductor layer and evanescently coupled with a depletion region of the photodiode. The photodiode may be arranged as a vertical photodiode or a lateral photodiode.

Abstract: An athermal optical waveguide structure such as an optical add drop multiplexer (OADM) or the like is fabricated by a method that includes forming a lower cladding layer on a substrate. A waveguiding core layer is formed on the lower cladding layer. An upper cladding layer is formed on the waveguiding core layer and the lower cladding layer a sol-gel material. The sol-gel material includes an organically modified siloxane and a metal oxide. A thermo-optic coefficient of the sol-gel material is adjusted by curing the sol-gel material for a selected duration of time at a selected temperature such that the thermo-optic coefficient of the sol-gel material compensates for a thermo-optic coefficient of at least the waveguiding core layer such that an effective thermo-optic coefficient of the optical waveguide structure at a specified optical wavelength and over a specified temperature range is reduced.

Abstract: Copolymerization of elemental sulfur with functional comonomers afford sulfur copolymers having a high molecular weight and high sulfur content. Nucleophilic activators initiate sulfur polymerizations at relative lower temperatures and in solutions, which enable the use of a wider range of comonomers, such as vinylics, styrenics, and non-homopolymerizing comonomers. Nucleophilic activators promote ring-opening reactions to generate linear polysulfide intermediates that copolymerize with comonomers. Dynamic sulfur-sulfur bonds enable re-processing or melt processing of the sulfur polymer. Chalcogenide-based copolymers have a refractive index of about 1.7-2.6 at a wavelength in a range of about 5000 nm-8????. The sulfur copolymer can be a thermoplastic or a thermoset for use in elastomers, resins, lubricants, coatings, antioxidants, cathode materials for electrochemical cells, dental adhesives/restorations, and polymeric articles such as polymeric films and free-standing substrates.