Patents by Inventor Sohachi Iwai

Sohachi Iwai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultraviolet light-emitting device in which p-type semiconductor is used
    Patent number: 7691202
    Abstract: An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.
    Type: Grant
    Filed: October 10, 2007
    Date of Patent: April 6, 2010
    Assignee: Riken
    Inventors: Hideki Hirayama, Sohachi Iwai, Yoshinobu Aoyagi
  • Ultraviolet light-emitting device in which p-type semiconductor is used
    Publication number: 20080042162
    Abstract: An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.
    Type: Application
    Filed: October 10, 2007
    Publication date: February 21, 2008
    Inventors: Hideki Hirayama, Sohachi Iwai, Yoshinobu Aoyagi
  • Ultraviolet light-emitting device in which p-type semiconductor is used
    Patent number: 7309394
    Abstract: An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.
    Type: Grant
    Filed: July 25, 2003
    Date of Patent: December 18, 2007
    Assignee: Riken
    Inventors: Hideki Hirayama, Sohachi Iwai, Yoshinobu Aoyagi
  • Ultraviolet light-emitting device in which p-type semiconductor is used
    Publication number: 20040211967
    Abstract: An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.
    Type: Application
    Filed: July 25, 2003
    Publication date: October 28, 2004
    Inventors: Hideki Hirayama, Sohachi Iwai, Yoshinobu Aoyagi