Abstract: A process for etching a tungsten layer formed on a semiconductor substrate is described. The etch is carried out in a parallel plate plasma reactor. The etchant gases include nitrogen trifluoride (NF.sub.3) and argon (Ar). The use of NF.sub.3 in a tungsten etching process reduces the build-up of polymers or sulfur residues on the electrode as occurs with processes utilizing sulfur or carbon fluorides as etchant gases. The process has a sufficiently high etch rate for volume production. The NF.sub.3 -Ar etch process can be used to etchback a blanket layer of deposited tungsten to form tungsten via plugs in contact areas of the device. In the via plug process, reduced micro-loading effect, that is, the tendency of some plugs to be etched away before the complete etching of the blanket layer, has been achieved. The etching of tunsten with NF.sub.3 -Ar process can be preformed in one or more steps in process utilizing several etching steps. Additionally, a tungsten etch incorporating one or more NF.sub.