Abstract: A light-emitting device including an amine-containing compound represented by Formula 1, an electronic apparatus including the light-emitting device, and the amine-containing compound represented by Formula 1 are provided.

Abstract: A nanomaterial includes quantum dots having a crystal structure, wherein the quantum dots include an exposed surface in a specific direction, and the exposed surface has a ligand bound thereto.

Abstract: An electronic device may include at least one microphone, a speaker, and a processor operatively connected to the at least one microphone and the speaker, wherein the processor may be configured to configure an operation frequency of the microphone as a first frequency and receive an external audio signal from the outside of the electronic device through the microphone operating in the first frequency, generate a first audio signal using the received external audio signal, acquire noise signal information, based on the first audio signal, output a second audio signal generated based on the noise signal information through the speaker, determine a second frequency, based on the generated second audio signal, and change the operation frequency of the microphone to the second frequency and receive the external audio signal from the outside of the electronic device through the microphone operating at the second frequency.

Abstract: According to an aspect, a method of preparing quantum dots includes a first operation of preparing a quantum dot seed solution; a second operation of growing a quantum dot by continuously injecting a quantum dot cluster solution into the quantum dot seed solution; a third operation of separating the grown quantum dot and dispersing the quantum dot in a solvent; and a fourth operation of further growing the quantum dot by continuously injecting the quantum dot cluster solution into the dispersed quantum dot.

Abstract: According to an aspect, a method of preparing quantum dots includes a first operation of preparing a quantum dot seed solution; a second operation of growing a quantum dot by continuously injecting a quantum dot cluster solution into the quantum dot seed solution; a third operation of separating the grown quantum dot and dispersing the quantum dot in a solvent; and a fourth operation of further growing the quantum dot by continuously injecting the quantum dot cluster solution into the dispersed quantum dot.

Abstract: The present invention relates to a quantum dot comprising: a core bearing III-V group compounds; and a ligand formed on the core, wherein the core is doped with zinc (Zn).

Abstract: Provided is a preparing method of a quantum dot, including a process of preparing a solution containing a group III precursor and a solvent, a process of reducing a group V precursor by using a compound represented by Chemical Formula 1, and a process of mixing the solution with the reduced group V precursor.

Abstract: A method of preparing quantum dot includes: forming a first mixture comprising a core, a zinc-containing first material, and a selenium-containing second material; forming a first intermediate comprising a core and a first shell, from the first mixture, followed by forming a second mixture comprising the first intermediate; forming a third mixture by adding a zinc-containing third material and a sulfur-containing fourth material to the second mixture; forming a second intermediate comprising the core, the first shell, and a second shell, from the third mixture, followed by forming a fourth mixture comprising the second intermediate; adding a ligand precursor-containing fifth material to the fourth mixture; and forming a ligand layer covering the second shell of the second intermediate, wherein an amount of the ligand precursor is in a range of about 10 pbw to about 22 pbw based on 100 pbw of the zinc-containing third material in the fourth mixture.

Abstract: Tetrapod-shaped quantum dots having a tetrapod shape in which a core includes a plurality of arms, and each of the arms have a different growth degree depending on the crystal direction.

Abstract: According to an aspect, a method of preparing quantum dots includes a first operation of preparing a quantum dot seed solution; a second operation of growing a quantum dot by continuously injecting a quantum dot cluster solution into the quantum dot seed solution; a third operation of separating the grown quantum dot and dispersing the quantum dot in a solvent; and a fourth operation of further growing the quantum dot by continuously injecting the quantum dot cluster solution into the dispersed quantum dot.

Abstract: Provided is a preparing method of a quantum dot, including a process of preparing a solution containing a group III precursor and a solvent, a process of reducing a group V precursor by using a compound represented by Chemical Formula 1, and a process of mixing the solution with the reduced group V precursor.

Abstract: A nanomaterial includes quantum dots having a crystal structure, wherein the quantum dots include an exposed surface in a specific direction, and the exposed surface has a ligand bound thereto.

Abstract: Tetrapod-shaped quantum dots having a tetrapod shape in which a core includes a plurality of arms, and each of the arms have a different growth degree depending on the crystal direction.

Abstract: A quantum dot stabilized by a halogen salt includes a compound of Group 13 and Group 15, a compound of Group 12 and Group 16 or a compound of Group 14 and Group 16. The quantum dot has a crystalline structure and at least a portion of a surface of the quantum dot is combined with a halogen salt. Thus, the quantum dot has a high stability in an air.

Abstract: A quantum dot stabilized by a halogen salt includes a compound of Group 13 and Group 15, a compound of Group 12 and Group 16 or a compound of Group 14 and Group 16. The quantum dot has a crystalline structure and at least a portion of a surface of the quantum dot is combined with a halogen salt. Thus, the quantum dot has a high stability in an air.

Abstract: Disclosed is a technology of producing quantum dots that are nano-size semiconducting crystals. A quantum dot producing apparatus includes a mixer for mixing precursor solutions, and a heating furnace with a plurality of heating areas providing different temperature conditions to heat the precursor mixture. Between the heating areas, a buffer may be installed which provides a low-temperature condition to prevent addition nucleation. Through this configuration, nucleation is separated from nuclear growth, uniformity in particle size of quantum dots is improved, which enables the mass-production of quantum dots, rather than a quantum dot producing apparatus with a single heating area that provides a constant temperature condition.

Abstract: An ultraviolet rays detection apparatus according to the present invention includes a color converting unit including nanocrystal quantum dots and having a color that is changed by irradiation of ultraviolet rays, and a non-color-converting unit disposed closer to the color converting unit and having a color that is not changed by the irradiation of the ultraviolet rays, thereby easily detecting the ultraviolet rays.

Abstract: Disclosed is a technique of producing that a technique of producing quantum dots that are nano-size semiconducting crystals. An apparatus of producing quantum dots includes a mixer to mix different kinds of precursor solutions uniformly in a channel by diverging each precursor solution into a plurality of micro streams and joining the diverging micro streams individually with different kinds of micro streams, and a heating furnace to pass the precursor mixture solution discharged from the mixer therethrough to create and grow quantum dot nucleuses, thus producing quantum dots. The mixer may further include a heating unit allowing temperature adjustment. In addition, a buffer which is maintained at a relatively low-temperature is provided between the mixer and the heating furnace in order to prevent additional nucleation. Accordingly, quantum dots may be produced even at a high flow rate, which leads to mass-production of quantum dots.

Abstract: Disclosed is a technology of producing quantum dots that are nano-size semiconducting crystals. A quantum dot producing apparatus includes a mixer for mixing precursor solutions, and a heating furnace with a plurality of heating areas providing different temperature conditions to heat the precursor mixture. Between the heating areas, a buffer may be installed which provides a low-temperature condition to prevent addition nucleation. Through this configuration, nucleation is separated from nuclear growth, uniformity in particle size of quantum dots is improved, which enables the mass-production of quantum dots, rather than a quantum dot producing apparatus with a single heating area that provides a constant temperature condition.

Abstract: Disclosed is a technique of producing that a technique of producing quantum dots that are nano-size semiconducting crystals. An apparatus of producing quantum dots includes a mixer to mix different kinds of precursor solutions uniformly in a channel by diverging each precursor solution into a plurality of micro streams and joining the diverging micro streams individually with different kinds of micro streams, and a heating furnace to pass the precursor mixture solution discharged from the mixer therethrough to create and grow quantum dot nucleuses, thus producing quantum dots. The mixer may further include a heating unit allowing temperature adjustment. In addition, a buffer which is maintained at a relatively low-temperature is provided between the mixer and the heating furnace in order to prevent additional nucleation. Accordingly, quantum dots may be produced even at a high flow rate, which leads to mass-production of quantum dots.