Abstract: An organic electroluminescence device of an embodiment of the present disclosure includes a first electrode, a second electrode facing the first electrode, and a plurality of organic layers disposed between the first electrode and the second electrode, wherein at least one organic layer of the plurality of organic layers includes an amine compound containing a fluorene group; an aryl group having 6 to 60 ring-forming carbon atoms, which is substituted to the fluorene group; a heteroaryl group having 2 to 60 ring-forming carbon atoms, which is substituted to the fluorene group; and at least one amine group, which is substituted to the fluorene group; wherein all the carbons of the aryl group are substituted with deuterium, and the organic electroluminescence device exhibits high efficiency and a long service life.

Abstract: Provided is a preparing method of a quantum dot, including a process of preparing a solution containing a group III precursor and a solvent, a process of reducing a group V precursor by using a compound represented by Chemical Formula 1, and a process of mixing the solution with the reduced group V precursor.

Abstract: A method of preparing quantum dot includes: forming a first mixture comprising a core, a zinc-containing first material, and a selenium-containing second material; forming a first intermediate comprising a core and a first shell, from the first mixture, followed by forming a second mixture comprising the first intermediate; forming a third mixture by adding a zinc-containing third material and a sulfur-containing fourth material to the second mixture; forming a second intermediate comprising the core, the first shell, and a second shell, from the third mixture, followed by forming a fourth mixture comprising the second intermediate; adding a ligand precursor-containing fifth material to the fourth mixture; and forming a ligand layer covering the second shell of the second intermediate, wherein an amount of the ligand precursor is in a range of about 10 pbw to about 22 pbw based on 100 pbw of the zinc-containing third material in the fourth mixture.

Abstract: Tetrapod-shaped quantum dots having a tetrapod shape in which a core includes a plurality of arms, and each of the arms have a different growth degree depending on the crystal direction.

Abstract: According to an aspect, a method of preparing quantum dots includes a first operation of preparing a quantum dot seed solution; a second operation of growing a quantum dot by continuously injecting a quantum dot cluster solution into the quantum dot seed solution; a third operation of separating the grown quantum dot and dispersing the quantum dot in a solvent; and a fourth operation of further growing the quantum dot by continuously injecting the quantum dot cluster solution into the dispersed quantum dot.

Abstract: Provided is a preparing method of a quantum dot, including a process of preparing a solution containing a group III precursor and a solvent, a process of reducing a group V precursor by using a compound represented by Chemical Formula 1, and a process of mixing the solution with the reduced group V precursor.

Abstract: A nanomaterial includes quantum dots having a crystal structure, wherein the quantum dots include an exposed surface in a specific direction, and the exposed surface has a ligand bound thereto.

Abstract: Tetrapod-shaped quantum dots having a tetrapod shape in which a core includes a plurality of arms, and each of the arms have a different growth degree depending on the crystal direction.

Abstract: A quantum dot stabilized by a halogen salt includes a compound of Group 13 and Group 15, a compound of Group 12 and Group 16 or a compound of Group 14 and Group 16. The quantum dot has a crystalline structure and at least a portion of a surface of the quantum dot is combined with a halogen salt. Thus, the quantum dot has a high stability in an air.

Abstract: A quantum dot stabilized by a halogen salt includes a compound of Group 13 and Group 15, a compound of Group 12 and Group 16 or a compound of Group 14 and Group 16. The quantum dot has a crystalline structure and at least a portion of a surface of the quantum dot is combined with a halogen salt. Thus, the quantum dot has a high stability in an air.

Abstract: Disclosed is a technology of producing quantum dots that are nano-size semiconducting crystals. A quantum dot producing apparatus includes a mixer for mixing precursor solutions, and a heating furnace with a plurality of heating areas providing different temperature conditions to heat the precursor mixture. Between the heating areas, a buffer may be installed which provides a low-temperature condition to prevent addition nucleation. Through this configuration, nucleation is separated from nuclear growth, uniformity in particle size of quantum dots is improved, which enables the mass-production of quantum dots, rather than a quantum dot producing apparatus with a single heating area that provides a constant temperature condition.

Abstract: An ultraviolet rays detection apparatus according to the present invention includes a color converting unit including nanocrystal quantum dots and having a color that is changed by irradiation of ultraviolet rays, and a non-color-converting unit disposed closer to the color converting unit and having a color that is not changed by the irradiation of the ultraviolet rays, thereby easily detecting the ultraviolet rays.

Abstract: Disclosed is a technique of producing that a technique of producing quantum dots that are nano-size semiconducting crystals. An apparatus of producing quantum dots includes a mixer to mix different kinds of precursor solutions uniformly in a channel by diverging each precursor solution into a plurality of micro streams and joining the diverging micro streams individually with different kinds of micro streams, and a heating furnace to pass the precursor mixture solution discharged from the mixer therethrough to create and grow quantum dot nucleuses, thus producing quantum dots. The mixer may further include a heating unit allowing temperature adjustment. In addition, a buffer which is maintained at a relatively low-temperature is provided between the mixer and the heating furnace in order to prevent additional nucleation. Accordingly, quantum dots may be produced even at a high flow rate, which leads to mass-production of quantum dots.

Abstract: Disclosed is a technology of producing quantum dots that are nano-size semiconducting crystals. A quantum dot producing apparatus includes a mixer for mixing precursor solutions, and a heating furnace with a plurality of heating areas providing different temperature conditions to heat the precursor mixture. Between the heating areas, a buffer may be installed which provides a low-temperature condition to prevent addition nucleation. Through this configuration, nucleation is separated from nuclear growth, uniformity in particle size of quantum dots is improved, which enables the mass-production of quantum dots, rather than a quantum dot producing apparatus with a single heating area that provides a constant temperature condition.

Abstract: Disclosed is a technique of producing that a technique of producing quantum dots that are nano-size semiconducting crystals. An apparatus of producing quantum dots includes a mixer to mix different kinds of precursor solutions uniformly in a channel by diverging each precursor solution into a plurality of micro streams and joining the diverging micro streams individually with different kinds of micro streams, and a heating furnace to pass the precursor mixture solution discharged from the mixer therethrough to create and grow quantum dot nucleuses, thus producing quantum dots. The mixer may further include a heating unit allowing temperature adjustment. In addition, a buffer which is maintained at a relatively low-temperature is provided between the mixer and the heating furnace in order to prevent additional nucleation. Accordingly, quantum dots may be produced even at a high flow rate, which leads to mass-production of quantum dots.