Abstract: An Ag alloy sputtering target includes Mg in a range of 1.0 atom % or more and 5.0 atom % or less, Au in a range of 0.10 atom % or more and 5.00 atom % or less, and a balance consisting of Ag and inevitable impurities. The Ag alloy sputtering target may further include Ca in a range of 0.01 atom % or more and 0.15 atom % or less. In addition, the oxygen content may be 0.010% by mass or less.

Abstract: An Ag alloy sputtering target includes Mg in a range of more than 1.0 atom % and 5.0 atom % or less, Pd in a range of more than 0.10 atom % and 2.00 atom % or less, and a balance consisting of Ag and inevitable impurities. The Ag alloy sputtering target may further include 0.10 atom % or more of Au, and a total content of Au and Pd may be set to 5.00 atom % or less. The Ag alloy sputtering target may further include Ca in a range of 0.01 atom % or more and 0.15 atom % or less. In addition, the oxygen content may be 0.010% by mass or less.

Abstract: A metal base substrate comprising: a metal base; an insulating layer; and a circuit layer, the metal base, the insulating layer and the circuit layer being laminated in an order, wherein the insulating layer includes a resin, a film thickness of the circuit layer is in a range of 10 ?m or more and 1000 ?m or less, and an average grain size, which is expressed by a unit of and a purity, which is expressed by a unit of mass %, satisfy a formula (1) below, average grain size/(100?Purity)>5 (1).

Abstract: A metal base substrate including: a metal base; an insulation layer; and a circuit layer, the metal base, the insulation layer and the circuit layer being laminated in an order, wherein the insulation layer includes a resin, a film thickness of the circuit layer is in a range of 10 ?m or more and 1000 ?m or less, and a yield stress of the circuit layer is in a range of 10 MPa or more and 150 MPa or less.

Abstract: A sputtering target for forming protective film which is used to form a protective film on one surface or both surfaces of a Cu wiring film contains Ni: 5.0 to 15.0% by mass, Mn: 2.0 to 10.0% by mass, Zn: 30.0 to 50.0% by mass, Al: 0.5 to 7.0% by mass, and a remainder composed of Cu and inevitable impurities. A laminated wiring film is provided with a Cu wiring film and the protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by the above-described sputtering target for forming protective film.

Abstract: An Ag alloy sputtering target of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities. In addition, an Ag alloy film of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities.

Abstract: An Ag alloy sputtering target of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities. In addition, an Ag alloy film of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities.

Abstract: A sputtering target for forming protective film which is used to form a protective film on one surface or both surfaces of a Cu wiring film contains Ni: 5.0 to 15.0% by mass, Mn: 2.0 to 10.0% by mass, Zn: 30.0 to 50.0% by mass, Al: 0.5 to 7.0% by mass, and a remainder composed of Cu and inevitable impurities. A laminated wiring film is provided with a Cu wiring film and the protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by the above-described sputtering target for forming protective film.

Abstract: Provided are a sputtering target for forming a magnetic recording medium film, on which a film having a low ordering temperature can be formed and which can suppress generation of particles, and a method for producing the same. The sputtering target for forming a magnetic recording medium film consists of a sintered body having a composition represented by the general formula: {(FexPt100-x)(100-y)Agy}(100-z)Cz, wherein x, y, and z are represented by atomic percent as 30?x?80, 1?y?30, and 3?z?63. Also, the method for producing the sputtering target has a step of hot pressing a mixed powder of AgPt alloy powder, FePt alloy powder, Pt powder, and graphite powder or carbon black powder in a vacuum or an inert gas atmosphere.

Abstract: A method for manufacturing a Co-base sintered alloy sputtering target for the formation of a magnetic recording film including providing a Cr—Co alloy powder consisting of 50 to 70 atomic % of Cr and remaining Co, a Pt powder, a non-magnetic oxide powder, and a Co powder, blending and mixing the powders together so as to give the chemical composition consisting of 2 to 15 mol % of a non-magnetic oxide, 3 to 20 mol % of Cr, and 5 to 30 mol % of Pt and a remainder containing Co, and sintering the mixture under pressure. Or alternatively providing a Pt—Cr binary alloy powder consisting of 10 to 90 atomic % of Pt and remaining Cr, a Pt powder, a non-magnetic oxide powder, and a Co powder, blending and mixing the powders so as to give the chemical composition above, and then sintering the mixture under pressure.

Abstract: The present invention provides a sputtering target for forming a phase-change film which generates few particles in sputtering and a method for manufacturing the same. The target of the invention has a composition containing in terms of atomic %, 20.2 to 24.2% of Ge, 20.2 to 24.2% of Sb, and the remainder including Te and inevitable impurities, and having a microstructure in which a Ge2Sb2Te5 phase having a hexagonal structure accounts for 90% or more in terms of mass %, and this target can be manufactured by subjecting a raw alloy powder to pressure sintering, and the raw alloy powder is obtained either by heat-treating an alloy ingot having the above composition and grinding the resulting alloy ingot, or by grinding the alloy ingot and heat-treating the obtained ground alloy powder and then pulverizing the alloy powder.

Abstract: A phase change film for a semiconductor nonvolatile memory and a sputtering target for forming the phase change film. The phase change film for a semiconductor nonvolatile memory and the sputtering target for forming the phase change film have a composition containing 10 to 25 atomic % of Ge, 10 to 25 atomic % of Sb, 1 to 10 atomic % of Ga, and 10 atomic % or less of B, Al, C, Si and lanthanoid elements, with the balance being Te and inevitable impurities.

Abstract: A phase change recording film having a high electrical resistance is provided. The phase change recording film may have the following composition in atom %: 15 to 30% of Ge, 15 to 25% of Sb, a total of 0.1 to 13% of one or both of Al and Si, and the balance of Te and impurities. Also, a sputtering target is provided for forming a phase change recording film having a high electrical resistance. The sputtering target may have the same composition as described above for the phrase change recording film.