Patents by Inventor Sohrab Ismail-Beigi

Sohrab Ismail-Beigi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ferroelectric devices including a layer having two or more stable configurations
    Patent number: 9536975
    Abstract: Ferroelectric semiconductor devices are provided by including a ferroelectric layer in the device that is made of a material that is not ferroelectric in bulk. Such layers can be disposed at interfaces to promote ferroelectric switching in a semiconductor device. Switching of conduction in the semiconductor is effected by the polarization of a mechanically bi-stable material. This material is not ferroelectric in bulk but can be considered to be when the thickness is sufficiently reduced down to a few atomic layers. Devices including such ferroelectric layers are suitable for various applications, such as transistors and memory cells (both volatile and non-volatile).
    Type: Grant
    Filed: June 21, 2015
    Date of Patent: January 3, 2017
    Assignee: Yale University
    Inventors: Alexie M. Kolpak, Fred J. Walker, James W. Reiner, Charles H. Ahn, Sohrab Ismail-Beigi
  • Ferroelectric Devices including a Layer having Two or More Stable Configurations
    Publication number: 20150311309
    Abstract: Ferroelectric semiconductor devices are provided by including a ferroelectric layer in the device that is made of a material that is not ferroelectric in bulk. Such layers can be disposed at interfaces to promote ferroelectric switching in a semiconductor device. Switching of conduction in the semiconductor is effected by the polarization of a mechanically bi-stable material. This material is not ferroelectric in bulk but can be considered to be when the thickness is sufficiently reduced down to a few atomic layers. Devices including such ferroelectric layers are suitable for various applications, such as transistors and memory cells (both volatile and non-volatile).
    Type: Application
    Filed: June 21, 2015
    Publication date: October 29, 2015
    Inventors: Alexie M. Kolpak, Fred J. Walker, James W. Reiner, Charles H. Ahn, Sohrab Ismail-Beigi
  • Ferroelectric Devices including a Layer having Two or More Stable Configurations
    Publication number: 20130001809
    Abstract: Ferroelectric semiconductor devices are provided by including a ferroelectric layer in the device that is made of a material that is not ferroelectric in bulk. Such layers can be disposed at interfaces to promote ferroelectric switching in a semiconductor device. Switching of conduction in the semiconductor is effected by the polarization of a mechanically bi-stable material. This material is not ferroelectric in bulk but can be considered to be when the thickness is sufficiently reduced down to a few atomic layers. Devices including such ferroelectric layers are suitable for various applications, such as transistors and memory cells (both volatile and non-volatile).
    Type: Application
    Filed: September 29, 2010
    Publication date: January 3, 2013
    Inventors: Alexie M. Kolpak, Fred J. Walker, James W. Reiner, Charles H. Ahn, Sohrab Ismail-Beigi