Patents by Inventor Sohyun Park
Sohyun Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12211941Abstract: A semiconductor device includes; an active pattern on a substrate, a source/drain pattern on the active pattern, a channel pattern connected to the source/drain pattern and including semiconductor patterns spaced apart in a vertical stack, and a gate electrode extending across the channel pattern. The semiconductor patterns includes a first semiconductor pattern and a second semiconductor pattern. The gate electrode includes a first part between the substrate and the first semiconductor pattern and a second part between the first semiconductor pattern and the second semiconductor pattern. A width of the first part varies with a depth of the first part, such that a width of a middle portion of the first part is less than a width of a lower portion of the first part and a width of an upper portion of the first part.Type: GrantFiled: May 23, 2021Date of Patent: January 28, 2025Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Donghyuk Yeom, Junkyum Kim, Kwan Heum Lee, Seonghwa Park, Sohyun Seo
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Publication number: 20250031363Abstract: A semiconductor device includes a first active pattern including a first edge portion and a second edge portion spaced apart from the first edge portion in a first direction, a first word line between the first edge portion and the second edge portion and extending in a second direction intersecting the first direction, a bit line on the first edge portion and extending in a third direction intersecting the first direction and the second direction, and a storage node contact on the second edge portion, where the first edge portion includes a first top surface and a second top surface, and the second top surface of the first edge portion is closer to the second edge portion than the first top surface of the first edge portion.Type: ApplicationFiled: January 16, 2024Publication date: January 23, 2025Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Minju KANG, Jongmin KIM, Sangjae PARK, Sohyun PARK, Kiseok LEE
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Publication number: 20240431097Abstract: Disclosed is a semiconductor device comprising an active pattern including first and second edge parts spaced apart from each other in a first direction, a word line extending along a second direction between the first and second edge parts, a bit line extending along a third direction on the first edge part, a storage node contact on the second edge part, a first active pad between the bit line and the first edge part, and a second active pad between the storage node contact and the second edge part. The first active pad extends in the third direction more than the first edge part. The second active pad extends in a direction opposite to the third direction more than the second edge part.Type: ApplicationFiled: December 19, 2023Publication date: December 26, 2024Inventors: Hyunjin Lee, Jongmin Kim, Kiseok Lee, Yun Choi, Inwoo Kim, Hui-Jung Kim, Sohyun Park, Heejae Chae
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Publication number: 20240414909Abstract: A semiconductor device includes an active pattern on a substrate; a gate structure extending through an upper portion of the active pattern; a bit line structure on a central portion of the active pattern; a lower contact plug on each of opposite end portions of the active pattern; and an upper contact plug structure on the lower contact plug. The upper contact plug structure includes a first upper contact plug and a second upper contact plug on the first upper contact plug. The second upper contact plug contacts the first upper contact plug. The first upper contact plug includes a first metal pattern and a barrier pattern covering a lower surface and a sidewall of the first metal pattern. An upper surface of the bit line structure contacts a lower surface of the second upper contact plug and does not contact the barrier pattern.Type: ApplicationFiled: February 15, 2024Publication date: December 12, 2024Inventors: Sohyun Park, Inwoo Kim, Jihun Lee, Seongtak Cho
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Patent number: 12166903Abstract: A computing device in a trusted computing (TC) system and an attestation method thereof are provided. The computing device includes at least one processor configured to operate as instructed by program code, the program code including: transmission code configured to cause the at least one processor to transmit, to a master controller, a first identification (ID) for a first device selected among a plurality of devices included in the TC system, a second ID for a second device selected among the plurality of devices, and a nonce; and attestation code configured to cause the at least one processor to perform attestation for the first device and the second device based on an aggregated signature, wherein the aggregated signature is based on generation of a first signature, by the first device, by using the nonce, and generation of a second signature, by the second device, by using the first signature.Type: GrantFiled: July 7, 2022Date of Patent: December 10, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seungho Lee, Sohyun Park, Yunho Youm, MyungSik Choi
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Publication number: 20240349483Abstract: A semiconductor device includes an active pattern on a substrate; a bit line structure on a central portion of the active pattern; a first spacer structure and a second spacer structure disposed on a first sidewall and a second sidewall, respectively, of the bit line structure, the first sidewall and the second sidewall of the bit line structure facing each other in the first direction; a lower contact plug on each of opposite end portions of the active pattern; and an upper contact plug on the lower contact plug. The upper contact plug may include a conductive pattern; and a conductive spacer covering a lower surface of the conductive pattern, wherein the conductive spacer contacts an outer sidewall of the first spacer structure, and does not contact an outer sidewall of the second spacer structure.Type: ApplicationFiled: January 18, 2024Publication date: October 17, 2024Inventors: SOHYUN PARK, Inwoo KIM, Sangho LEE, Jihun LEE
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Publication number: 20240324183Abstract: An integrated circuit device includes a substrate having an active area, a plurality of bit line structures on the substrate, the plurality of bit line structures including insulating spacers on sidewalls thereof, a buried contact between the plurality of bit line structures and electrically connected to the active area, an insulation capping pattern on a bit line structure of the plurality of bit line structures, and a landing pad electrically connected to the buried contact, the landing pad arranged to vertically overlap the bit line structure on the insulation capping pattern, wherein an uppermost surface of the landing pad is higher than an uppermost surface of the insulation capping pattern, relative to the substrate.Type: ApplicationFiled: October 18, 2023Publication date: September 26, 2024Inventors: Chanhoon Park, Jongkyu Kim, Seunghoon Kim, Sohyun Park, Woohyun Lee
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Publication number: 20240320196Abstract: A system for constructing a database for a structure and a property of a material based on big data includes an input module that receives chemical information about the material based on the big data, a controller that obtains information about the structure and the property of the material by modeling the chemical information about the material based on quantum mechanics and calculating elastic constants, a database constructing module that constructs a database for the information about the structure and the property, and an output module that outputs the information about the structure and the property in the database with respect to a model selected through the modeling.Type: ApplicationFiled: July 21, 2023Publication date: September 26, 2024Applicant: Foundation of Soongsil University-Industry CooperationInventors: Jiwoong Kim, Hyokyeong Kim, Sohyun Park
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Publication number: 20240283466Abstract: Provided is a method performed by a system for distribution storage of blockchain transaction data based on an erasure code. The method includes performing RS encoding on a predetermined number of blockchain transaction original data; and after the RS encoding is performed, applying LRC encoding technique to blockchain transaction original data (LRC-encoded original data), which needs to be accessed high speed, among the RS-encoded transaction original data to encode and store the LRC-encoded original data, and repairing the LRC-encoded original data through decoding.Type: ApplicationFiled: December 27, 2023Publication date: August 22, 2024Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sohyun PARK, Myungcheol LEE, Beongjun CHOI
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Publication number: 20240237536Abstract: The present invention relates to a nanoscale thermoelectric assembly assembled through non-covalent contact between graphene and molecules, and a thermoelectric device comprising same. The present invention ascertains an increase in the Seebeck value due to n-type doping induced by an electron interaction in non-covalent contact of molecules, and confirms the length dependence of the Seebeck value in a graphene-alkylamine SAM system, thereby enabling the development and industrial application of efficient organic thermoelectric devices at a molecular scale.Type: ApplicationFiled: June 21, 2022Publication date: July 11, 2024Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATIONInventors: Hyo Jae YOON, Sohyun PARK
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Publication number: 20240160862Abstract: An electronic apparatus includes a memory configured to store instructions, and a processor configured to execute the instructions to receive a text of a first language, generate, based on the text of the first language, style information indicating a translation style to be applied to the text of the first language and machine-translate the text of the first language into text of a second language based on the generated style information.Type: ApplicationFiled: September 18, 2023Publication date: May 16, 2024Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Joonghoon KIM, Sangha Kim, Jiwan Kim, Sangil Park, Sohyun Park, Taehwan Yoo
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METHOD, SYSTEM, AND RECORDING MEDIUM FOR EXPANDING AND UTILIZING DATA USING PSEUDONYMOUS ASSOCIATION
Publication number: 20240144321Abstract: Disclosed are a method, a system, and a recording medium for expanding and utilizing data using pseudonym association. The method of expanding and utilizing data using pseudonym association includes receiving pseudonym association data in which first-party information of a customer company and third-party information of an entity other than the customer company are pseudonymized and combined; generating an interpretation model for data estimation by modeling the pseudonym association data; estimating the third-party information using target information of the customer company through the interpretation model; and providing the estimated third-party information for a service related to the customer company.Type: ApplicationFiled: October 20, 2023Publication date: May 2, 2024Inventors: Yeunha PARK, SoHyun PARK -
Publication number: 20240130116Abstract: A semiconductor device includes a substrate having an active region; a bit line structure on the substrate and extending in one direction; a bit line contact electrically connecting a first impurity region of the active region and the bit line structure; and a storage node contact disposed on a sidewall of the bit line structure and electrically connected to a second impurity region of the active region, wherein the storage node contact includes a vertical extension portion extending in a vertical direction, perpendicular to an upper surface of the substrate, and a horizontal extension portion integrally connected to the vertical extension portion and extending in a horizontal direction, parallel to the upper surface of the substrate.Type: ApplicationFiled: October 3, 2023Publication date: April 18, 2024Inventors: Junhyeok AHN, Sohyun PARK
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Semiconductor devices having improved electrical characteristics and methods of fabricating the same
Patent number: 11929324Abstract: The semiconductor device provided comprises a substrate that includes active regions that extends in a first direction and a device isolation layer that defines the active regions, word lines that run across the active regions in a second direction that intersects the first direction, bit-line structures that intersect the active regions and the word lines and that extend in a third direction that is perpendicular to the second direction, first contacts between the bit-line structures and the active regions, spacer structures on sidewalls of the bit-line structures, and second contacts that are between adjacent bit-line structures and are connected to the active regions. Each of the spacer structures extends from the sidewalls of the bit-line structures onto a sidewall of the device isolation layer.Type: GrantFiled: April 12, 2023Date of Patent: March 12, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Taejin Park, Keunnam Kim, Sohyun Park, Jin-Hwan Chun, Wooyoung Choi, Sunghee Han, Inkyoung Heo, Yoosang Hwang -
Publication number: 20230422488Abstract: A semiconductor device including a first contact plug structure on a substrate, a lower spacer structure on a sidewall of the first contact plug structure, and a bit line structure on the first contact plug structure and including a conductive structure and an insulation structure stacked in a vertical direction substantially perpendicular to an upper surface of the substrate may be provided. The first contact plug structure may include a conductive pad contacting the upper surface of the substrate, an ohmic contact pattern on the conductive pad, and a conductive filling pattern on the ohmic contact pattern. The conductive filling pattern may include metal, and include a lower portion having a relatively large width and an upper portion having a relatively small width. The lower spacer structure may contact a sidewall of the conductive filling pattern.Type: ApplicationFiled: March 29, 2023Publication date: December 28, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Jongmin KIM, Sohyun Park, Chansic Yoon, Dongmin Choi, Seungbo Ko, Hyosub Kim, Jingkuk Bae, Woojin Jeong, Eunkyung Cha, Junhyeok Ahn
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Publication number: 20230422486Abstract: A semiconductor device includes a cell active pattern including a first portion and a second portion that are spaced apart from each other; a gate structure between the first portion and the second portion of the cell active pattern; a bit-line contact on the first portion of the cell active pattern; a connection pattern on the second portion of the cell active pattern; and a cell separation pattern in contact with the bit-line contact and the connection pattern, wherein the cell separation pattern includes a first sidewall in contact with the connection pattern and a second sidewall in contact with the bit-line contact, an upper portion of the second sidewall of the cell separation pattern is in contact with the bit-line contact, and a lower portion of the second sidewall of the cell separation pattern is spaced apart from the bit-line contact.Type: ApplicationFiled: February 14, 2023Publication date: December 28, 2023Inventors: Kiseok LEE, Jongmin KIM, Hyo-Sub KIM, Hui-Jung KIM, Sohyun PARK, Junhyeok AHN, Chan-Sic YOON, Myeong-Dong LEE, Woojin JEONG, Wooyoung CHOI
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Publication number: 20230389299Abstract: A semiconductor memory device includes active patterns spaced apart from each other in first and second directions intersecting each other, each active pattern having a central portion, a first end portion, and a second end portion, bit line contacts disposed on the central portions and spaced apart from each other in the first and second directions, separation insulating patterns, each of which is disposed between the bit line contacts adjacent to each other in the first and second directions, intermediate insulating patterns, each of which is disposed between the bit line contact and the separation insulating pattern which are adjacent to each other in the first direction, and connection patterns, each of which is disposed between the bit line contact and the separation insulating pattern which are adjacent to each other in the second direction.Type: ApplicationFiled: January 5, 2023Publication date: November 30, 2023Inventors: Eunjung KIM, Sohyun PARK
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Publication number: 20230351126Abstract: Provided is an electronic apparatus that includes a microphone; a communication interface; a memory storing information on a first encoder, a first decoder, a first interpretation model comprising a first version conversion module, and at least one first version which the first conversion module may convert; and a processor. The processor is configured to communicate with an external device and receive information about at least one second version corresponding to a second interpretation model in the external device; obtain information on a compatible version based the at least one first version and the least one second version; based on a user voice, obtain a first feature vector corresponding to the user voice using the first encoder, convert the first feature vector to a second feature vector corresponding to the compatible version, and transmit the second feature vector to the external device.Type: ApplicationFiled: July 12, 2023Publication date: November 2, 2023Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Soyoon PARK, Sungjun LIM, Jonghyun KIM, Jiwan KIM, Hakjung KIM, Hyunkyung KIM, Sohyun PARK, Indong LEE
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Publication number: 20230320074Abstract: Provided is a semiconductor device including a conductive contact plug on a substrate, the conductive contact plug including a lower portion and an upper portion on the lower portion, the lower portion having a first width, and the upper portion having a second width less than the first width, a bit line structure on the conductive contact plug, the bit line structure including a conductive structure and an insulation structure provided in a vertical direction perpendicular to an upper surface of the substrate, and a first lower spacer, a second lower spacer, and a third lower spacer sequentially provided on a sidewall of the lower portion of the conductive contact plug in a horizontal direction parallel to the upper surface of the substrate, wherein an uppermost surface of the third lower spacer is higher than an upper surface of the first lower spacer and an upper surface of the second lower spacer.Type: ApplicationFiled: September 20, 2022Publication date: October 5, 2023Applicant: SAMSUNG ELECTRONICS CO., LTDInventors: Jongmin KIM, Chansic YOON, Hyosub KIM, Sohyun PARK, Junhyeok AHN
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SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL CHARACTERISTICS AND METHODS OF FABRICATING THE SAME
Publication number: 20230253315Abstract: The semiconductor device provided comprises a substrate that includes active regions that extends in a first direction and a device isolation layer that defines the active regions, word lines that run across the active regions in a second direction that intersects the first direction, bit-line structures that intersect the active regions and the word lines and that extend in a third direction that is perpendicular to the second direction, first contacts between the bit-line structures and the active regions, spacer structures on sidewalls of the bit-line structures, and second contacts that are between adjacent bit-line structures and are connected to the active regions. Each of the spacer structures extends from the sidewalls of the bit-line structures onto a sidewall of the device isolation layer.Type: ApplicationFiled: April 12, 2023Publication date: August 10, 2023Inventors: TAEJIN PARK, KEUNNAM KIM, SOHYUN PARK, JIN-HWAN CHUN, WOOYOUNG CHOI, SUNGHEE HAN, INKYOUNG HEO, YOOSANG HWANG