Abstract: The present invention relates to a thermoelectric measurement system based on a liquid eutectic gallium-indium electrode, whereby thermoelectric performance can be measured with excellent efficiency and high reproducibility even without construction of expensive equipment, various organic molecules as well as large-area molecular layers can be measured, and various thermoelectric materials, such as inorganic materials and inorganic-organic composite materials, can be measured. In addition, non-toxic liquid metal EGaIn is used as an upper electrode, so the damage to even a substance of measurement in the form of a nano-level thin film can be minimized, and the measurement of thermoelectric performance can be performed on even nano- to micro-level organic thermoelectric elements. Therefore, the thermoelectric measurement system is widely utilized across the thermoelectric element industry.

Abstract: A semiconductor memory device includes; a first impurity region and a second impurity region spaced apart in a substrate, a device isolation pattern between the first impurity region and the second impurity region, a bit-line contact on the first impurity region, a storage node contact on the second impurity region and a dielectric pattern between the bit-line contact and the storage node contact. An upper part of a sidewall of the device isolation pattern has a first slope and a lower part of the sidewall of the device isolation pattern has a second slope different from the first slope.

Abstract: Techniques and mechanisms for the wireless transmission of power or control signals between two components of an implantable ophthalmic system are disclosed herein. An example device includes an accommodating intraocular lens (aIOL) and separate auxiliary electronics, both enclosed in biocompatible materials. The aIOL includes a dynamic optic, control logic, a battery and an antenna. The auxiliary electronics include an antenna, an energy storage cell, and a sensor. The auxiliary electronics may be wirelessly coupled to the aIOL for the wireless transmission of power or control signals.

Abstract: The semiconductor device provided comprises a substrate that includes active regions that extends in a first direction and a device isolation layer that defines the active regions, word lines that run across the active regions in a second direction that intersects the first direction, bit-line structures that intersect the active regions and the word lines and that extend in a third direction that is perpendicular to the second direction, first contacts between the bit-line structures and the active regions, spacer structures on sidewalls of the bit-line structures, and second contacts that are between adjacent bit-line structures and are connected to the active regions. Each of the spacer structures extends from the sidewalls of the bit-line structures onto a sidewall of the device isolation layer.

Abstract: The semiconductor device provided comprises a substrate that includes active regions that extends in a first direction and a device isolation layer that defines the active regions, word lines that run across the active regions in a second direction that intersects the first direction, bit-line structures that intersect the active regions and the word lines and that extend in a third direction that is perpendicular to the second direction, first contacts between the bit-line structures and the active regions, spacer structures on sidewalls of the bit-line structures, and second contacts that are between adjacent bit-line structures and are connected to the active regions. Each of the spacer structures extends from the sidewalls of the bit-line structures onto a sidewall of the device isolation layer.

Abstract: The present invention relates to a thermoelectric measurement system based on a liquid eutectic gallium-indium electrode, whereby thermoelectric performance can be measured with excellent efficiency and high reproducibility even without construction of expensive equipment, various organic molecules as well as large-area molecular layers can be measured, and various thermoelectric materials, such as inorganic materials and inorganic-organic composite materials, can be measured. In addition, non-toxic liquid metal EGaIn is used as an upper electrode, so the damage to even a substance of measurement in the form of a nano-level thin film can be minimized, and the measurement of thermoelectric performance can be performed on even nano- to micro-level organic thermoelectric elements. Therefore, the thermoelectric measurement system is widely utilized across the thermoelectric element industry.

Abstract: A semiconductor memory device includes; a first impurity region and a second impurity region spaced apart in a semiconductor substrate, a bit line electrically connected to the first impurity region, a storage node contact electrically connected to the second impurity region, an air gap between the bit line and the storage node contact, a landing pad electrically connected to the storage node contact, a buried dielectric pattern on a sidewall of the landing pad and on the air gap, and a spacer capping pattern between the buried dielectric pattern and the air gap.

Abstract: A semiconductor memory device is disclosed. The device may include first and second impurity regions provided in a substrate and spaced apart from each other, the second impurity region having a top surface higher than the first impurity region, a device isolation pattern interposed between the first and second impurity regions, a first contact plug, which is in contact with the first impurity region and has a bottom surface lower than the top surface of the second impurity region, a gap-fill insulating pattern interposed between the first contact plug and the second impurity region, a first protection spacer interposed between the gap-fill insulating pattern and the second impurity region, and a first spacer, which is in contact with a side surface of the first contact plug and the device isolation pattern and is interposed between the first protection spacer and the gap-fill insulating pattern.

Abstract: A conjugated polymer that is an electron donor, that is soluble without aggregation, that is solution-coatable and is dryable at a temperature below 70° C., that has an energy conversion efficiency of 7 % or more over an area of 5 cm2 or more, and that is composed of a repeating unit represented by Chemical Formula 1A below: where x is a real number from 0.1 to 0.2; and n is an integer from 1 to 1,000. The conjugated polymer forms a uniform thin film over a large area of, for example, an organic solar cell, without a heat treatment due to superior solubility and crystallinity at low temperature and, thus, allows fabrication of an organic solar cell with high efficiency at a low temperature.

Abstract: A semiconductor memory device includes; a first impurity region and a second impurity region spaced apart in a substrate, a device isolation pattern between the first impurity region and the second impurity region, a bit-line contact on the first impurity region, a storage node contact on the second impurity region and a dielectric pattern between the bit-line contact and the storage node contact. An upper part of a sidewall of the device isolation pattern has a first slope and a lower part of the sidewall of the device isolation pattern has a second slope different from the first slope.

Abstract: A semiconductor device includes a substrate, a bit line structure on the substrate, a contact plug structure being adjacent to the bit line structure and extending in a vertical direction perpendicular to an upper surface of the substrate, and a capacitor electrically connected to the contact plug structure. The contact plug structure includes a lower contact plug, a metal silicide pattern, and an upper contact plug that are sequentially stacked on the substrate. The metal silicide pattern has an L-shaped cross section.

Abstract: The semiconductor device provided comprises a substrate that includes active regions that extends in a first direction and a device isolation layer that defines the active regions, word lines that run across the active regions in a second direction that intersects the first direction, bit-line structures that intersect the active regions and the word lines and that extend in a third direction that is perpendicular to the second direction, first contacts between the bit-line structures and the active regions, spacer structures on sidewalls of the bit-line structures, and second contacts that are between adjacent bit-line structures and are connected to the active regions. Each of the spacer structures extends from the sidewalls of the bit-line structures onto a sidewall of the device isolation layer.

Abstract: Techniques and mechanisms for the wireless transmission of power or control signals between two components of an implantable ophthalmic system are disclosed herein. An example device includes an accommodating intraocular lens (aIOL) and separate auxiliary electronics, both enclosed in biocompatible materials. The aIOL includes a dynamic optic, control logic, a battery and an antenna. The auxiliary electronics include an antenna, an energy storage cell, and a sensor. The auxiliary electronics may be wirelessly coupled to the aIOL for the wireless transmission of power or control signals.

Abstract: A semiconductor device includes a substrate, a bit line structure on the substrate, a contact plug structure being adjacent to the bit line structure and extending in a vertical direction perpendicular to an upper surface of the substrate, and a capacitor electrically connected to the contact plug structure. The contact plug structure includes a lower contact plug, a metal silicide pattern, and an upper contact plug that are sequentially stacked on the substrate. The metal silicide pattern has an L-shaped cross section.

Abstract: Techniques and mechanisms for the wireless transmission of power and sensor information between two components of an implantable ophthalmic device are disclosed herein. An example device includes an accommodating intraocular lens (aIOL) and separate auxiliary electronics, both enclosed in biocompatible materials. The aIOL includes a dynamic optic, control logic, a battery and an antenna. The auxiliary electronics include an antenna, an energy storage cell, and a sensor. The auxiliary electronics may be wirelessly coupled to the aIOL for the wireless transmission of power and sensor information.

Abstract: The present disclosure relates to a conjugated polymer for a low-temperature process, which is capable of forming a uniform thin film over a large area without a heat treatment process due to superior solubility and crystallinity at low temperature and, thus, allows fabrication of an organic solar cell with high efficiency at low temperature.

Abstract: Techniques and mechanisms for the wireless transmission of power and sensor information between two components of an implantable ophthalmic device are disclosed herein. An example device includes an accommodating intraocular lens (aIOL) and separate auxiliary electronics, both enclosed in biocompatible materials. The aIOL includes a dynamic optic, control logic, a battery and an antenna. The auxiliary electronics include an antenna, an energy storage cell, and a sensor. The auxiliary electronics may be wirelessly coupled to the aIOL for the wireless transmission of power and sensor information.

Abstract: A near-eye display including a light source, an optical system, and a phase map including multiple pixels. The optical system is configured to receive illumination light from the light source and output the illumination light as an in-phase wavefront. Control logic of the near-eye display is coupled to variously program different phase patterns of the phase map at different times. The phase patterns are each to variously adjust phases of respective portions of the in-phase wavefront. For each of the phase patterns, the phase map is to form a different respective image in response to being illuminated by the in-phase wavefront.

Abstract: Techniques and mechanisms for the wireless transmission of power and sensor information between two components of an implantable ophthalmic device are disclosed herein. An example device includes an accommodating intraocular lens (aIOL) and separate auxiliary electronics, both enclosed in biocompatible materials. The aIOL includes a dynamic optic, control logic, a battery and an antenna. The auxiliary electronics include an antenna, an energy storage cell, and a sensor. The auxiliary electronics may be wirelessly coupled to the aIOL for the wireless transmission of power and sensor information.

Abstract: A method of forming a semiconductor device includes forming a molding layer and a supporter layer on a substrate including an etch stop layer, forming a mask layer on the supporter layer, forming a first edge blocking layer on the mask layer, forming a mask pattern by etching the mask layer, forming a hole, forming a lower electrode in the hole, forming a supporter mask layer on the supporter layer, forming a second edge blocking layer on the supporter mask layer, forming a supporter mask pattern by patterning the supporter mask layer, forming a supporter opening passing through the supporter layer, removing the molding layer, forming a capacitor dielectric layer and an upper electrode on the lower electrode, forming an interlayer insulating layer on the upper electrode, and planarizing the interlayer insulating layer. The hole passes through the supporter layer, the molding layer and the etch stop layer.