Patents by Inventor Sohyun Park

Sohyun Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11482655
    Abstract: The present invention relates to a thermoelectric measurement system based on a liquid eutectic gallium-indium electrode, whereby thermoelectric performance can be measured with excellent efficiency and high reproducibility even without construction of expensive equipment, various organic molecules as well as large-area molecular layers can be measured, and various thermoelectric materials, such as inorganic materials and inorganic-organic composite materials, can be measured. In addition, non-toxic liquid metal EGaIn is used as an upper electrode, so the damage to even a substance of measurement in the form of a nano-level thin film can be minimized, and the measurement of thermoelectric performance can be performed on even nano- to micro-level organic thermoelectric elements. Therefore, the thermoelectric measurement system is widely utilized across the thermoelectric element industry.
    Type: Grant
    Filed: August 21, 2019
    Date of Patent: October 25, 2022
    Assignee: Korea University Research and Business Foundation
    Inventors: Hyo Jae Yoon, Sohyun Park
  • Patent number: 11404538
    Abstract: A semiconductor memory device includes; a first impurity region and a second impurity region spaced apart in a substrate, a device isolation pattern between the first impurity region and the second impurity region, a bit-line contact on the first impurity region, a storage node contact on the second impurity region and a dielectric pattern between the bit-line contact and the storage node contact. An upper part of a sidewall of the device isolation pattern has a first slope and a lower part of the sidewall of the device isolation pattern has a second slope different from the first slope.
    Type: Grant
    Filed: August 18, 2020
    Date of Patent: August 2, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Taejin Park, Chulkwon Park, Soyeong Kim, Eun A Kim, Hyo-Sub Kim, Sohyun Park, Sunghee Han, Yoosang Hwang
  • Patent number: 11364109
    Abstract: Techniques and mechanisms for the wireless transmission of power or control signals between two components of an implantable ophthalmic system are disclosed herein. An example device includes an accommodating intraocular lens (aIOL) and separate auxiliary electronics, both enclosed in biocompatible materials. The aIOL includes a dynamic optic, control logic, a battery and an antenna. The auxiliary electronics include an antenna, an energy storage cell, and a sensor. The auxiliary electronics may be wirelessly coupled to the aIOL for the wireless transmission of power or control signals.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: June 21, 2022
    Assignee: Verily Life Sciences LLC
    Inventors: Brooke C. Basinger, Dimitri Azar, Jeremy Emken, Anil Ram Rakhyani, Patricia E. Johnson, Daniel B. Otts, Sohyun Park
  • Publication number: 20220165657
    Abstract: The semiconductor device provided comprises a substrate that includes active regions that extends in a first direction and a device isolation layer that defines the active regions, word lines that run across the active regions in a second direction that intersects the first direction, bit-line structures that intersect the active regions and the word lines and that extend in a third direction that is perpendicular to the second direction, first contacts between the bit-line structures and the active regions, spacer structures on sidewalls of the bit-line structures, and second contacts that are between adjacent bit-line structures and are connected to the active regions. Each of the spacer structures extends from the sidewalls of the bit-line structures onto a sidewall of the device isolation layer.
    Type: Application
    Filed: February 9, 2022
    Publication date: May 26, 2022
    Inventors: TAEJIN PARK, Keunnam Kim, Sohyun Park, Jin-Hwan Chun, Wooyoung Choi, Sunghee Han, Inkyoung Heo, Yoosang Hwang
  • Patent number: 11282787
    Abstract: The semiconductor device provided comprises a substrate that includes active regions that extends in a first direction and a device isolation layer that defines the active regions, word lines that run across the active regions in a second direction that intersects the first direction, bit-line structures that intersect the active regions and the word lines and that extend in a third direction that is perpendicular to the second direction, first contacts between the bit-line structures and the active regions, spacer structures on sidewalls of the bit-line structures, and second contacts that are between adjacent bit-line structures and are connected to the active regions. Each of the spacer structures extends from the sidewalls of the bit-line structures onto a sidewall of the device isolation layer.
    Type: Grant
    Filed: May 20, 2020
    Date of Patent: March 22, 2022
    Inventors: Taejin Park, Keunnam Kim, Sohyun Park, Jin-Hwan Chun, Wooyoung Choi, Sunghee Han, Inkyoung Heo, Yoosang Hwang
  • Publication number: 20210376216
    Abstract: The present invention relates to a thermoelectric measurement system based on a liquid eutectic gallium-indium electrode, whereby thermoelectric performance can be measured with excellent efficiency and high reproducibility even without construction of expensive equipment, various organic molecules as well as large-area molecular layers can be measured, and various thermoelectric materials, such as inorganic materials and inorganic-organic composite materials, can be measured. In addition, non-toxic liquid metal EGaIn is used as an upper electrode, so the damage to even a substance of measurement in the form of a nano-level thin film can be minimized, and the measurement of thermoelectric performance can be performed on even nano- to micro-level organic thermoelectric elements. Therefore, the thermoelectric measurement system is widely utilized across the thermoelectric element industry.
    Type: Application
    Filed: August 21, 2019
    Publication date: December 2, 2021
    Applicant: Korea University Research and Business Foundation
    Inventors: Hyo Jae YOON, Sohyun PARK
  • Publication number: 20210296321
    Abstract: A semiconductor memory device includes; a first impurity region and a second impurity region spaced apart in a semiconductor substrate, a bit line electrically connected to the first impurity region, a storage node contact electrically connected to the second impurity region, an air gap between the bit line and the storage node contact, a landing pad electrically connected to the storage node contact, a buried dielectric pattern on a sidewall of the landing pad and on the air gap, and a spacer capping pattern between the buried dielectric pattern and the air gap.
    Type: Application
    Filed: March 16, 2021
    Publication date: September 23, 2021
    Inventors: INKYOUNG HEO, HYO-SUB KIM, SOHYUN PARK, TAEJIN PARK, SEUNG-HEON LEE, YOUN-SEOK CHOI, SUNGHEE HAN, YOOSANG HWANG
  • Publication number: 20210296237
    Abstract: A semiconductor memory device is disclosed. The device may include first and second impurity regions provided in a substrate and spaced apart from each other, the second impurity region having a top surface higher than the first impurity region, a device isolation pattern interposed between the first and second impurity regions, a first contact plug, which is in contact with the first impurity region and has a bottom surface lower than the top surface of the second impurity region, a gap-fill insulating pattern interposed between the first contact plug and the second impurity region, a first protection spacer interposed between the gap-fill insulating pattern and the second impurity region, and a first spacer, which is in contact with a side surface of the first contact plug and the device isolation pattern and is interposed between the first protection spacer and the gap-fill insulating pattern.
    Type: Application
    Filed: November 13, 2020
    Publication date: September 23, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: HYO-SUB KIM, SOHYUN PARK, DAEWON KIM, DONGOH KIM, EUN A KIM, CHULKWON PARK, TAEJIN PARK, KISEOK LEE, SUNGHEE HAN
  • Patent number: 11114619
    Abstract: A conjugated polymer that is an electron donor, that is soluble without aggregation, that is solution-coatable and is dryable at a temperature below 70° C., that has an energy conversion efficiency of 7 % or more over an area of 5 cm2 or more, and that is composed of a repeating unit represented by Chemical Formula 1A below: where x is a real number from 0.1 to 0.2; and n is an integer from 1 to 1,000. The conjugated polymer forms a uniform thin film over a large area of, for example, an organic solar cell, without a heat treatment due to superior solubility and crystallinity at low temperature and, thus, allows fabrication of an organic solar cell with high efficiency at a low temperature.
    Type: Grant
    Filed: August 19, 2019
    Date of Patent: September 7, 2021
    Assignee: Korea Institute of Science and Technology
    Inventors: Hae Jung Son, Sungmin Park, Jong Baek Park, Sohyun Park
  • Publication number: 20210273048
    Abstract: A semiconductor memory device includes; a first impurity region and a second impurity region spaced apart in a substrate, a device isolation pattern between the first impurity region and the second impurity region, a bit-line contact on the first impurity region, a storage node contact on the second impurity region and a dielectric pattern between the bit-line contact and the storage node contact. An upper part of a sidewall of the device isolation pattern has a first slope and a lower part of the sidewall of the device isolation pattern has a second slope different from the first slope.
    Type: Application
    Filed: August 18, 2020
    Publication date: September 2, 2021
    Inventors: TAEJIN PARK, CHULKWON PARK, SOYEONG KIM, EUN A KIM, HYO-SUB KIM, SOHYUN PARK, SUNGHEE HAN, YOOSANG HWANG
  • Patent number: 11037930
    Abstract: A semiconductor device includes a substrate, a bit line structure on the substrate, a contact plug structure being adjacent to the bit line structure and extending in a vertical direction perpendicular to an upper surface of the substrate, and a capacitor electrically connected to the contact plug structure. The contact plug structure includes a lower contact plug, a metal silicide pattern, and an upper contact plug that are sequentially stacked on the substrate. The metal silicide pattern has an L-shaped cross section.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: June 15, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Taejin Park, Keunnam Kim, Huijung Kim, Sohyun Park, Jaehwan Cho, Yoosang Hwang
  • Publication number: 20210082799
    Abstract: The semiconductor device provided comprises a substrate that includes active regions that extends in a first direction and a device isolation layer that defines the active regions, word lines that run across the active regions in a second direction that intersects the first direction, bit-line structures that intersect the active regions and the word lines and that extend in a third direction that is perpendicular to the second direction, first contacts between the bit-line structures and the active regions, spacer structures on sidewalls of the bit-line structures, and second contacts that are between adjacent bit-line structures and are connected to the active regions. Each of the spacer structures extends from the sidewalls of the bit-line structures onto a sidewall of the device isolation layer.
    Type: Application
    Filed: May 20, 2020
    Publication date: March 18, 2021
    Inventors: Taejin Park, Keunnam Kim, Sohyun Park, Jin-Hwan Chun, Wooyoung Choi, Sunghee Han, Inkyoung Heo, Yoosang Hwang
  • Publication number: 20210015603
    Abstract: Techniques and mechanisms for the wireless transmission of power or control signals between two components of an implantable ophthalmic system are disclosed herein. An example device includes an accommodating intraocular lens (aIOL) and separate auxiliary electronics, both enclosed in biocompatible materials. The aIOL includes a dynamic optic, control logic, a battery and an antenna. The auxiliary electronics include an antenna, an energy storage cell, and a sensor. The auxiliary electronics may be wirelessly coupled to the aIOL for the wireless transmission of power or control signals.
    Type: Application
    Filed: September 30, 2020
    Publication date: January 21, 2021
    Inventors: Brooke C. Basinger, Dimitri Azar, Jeremy Emken, Anil Ram Rakhyani, Patricia E. Johnson, Daniel B. Otts, Sohyun Park
  • Publication number: 20200388620
    Abstract: A semiconductor device includes a substrate, a bit line structure on the substrate, a contact plug structure being adjacent to the bit line structure and extending in a vertical direction perpendicular to an upper surface of the substrate, and a capacitor electrically connected to the contact plug structure. The contact plug structure includes a lower contact plug, a metal silicide pattern, and an upper contact plug that are sequentially stacked on the substrate. The metal silicide pattern has an L-shaped cross section.
    Type: Application
    Filed: October 31, 2019
    Publication date: December 10, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Taejin PARK, Keunnam Kim, Huijung Kim, Sohyun Park, Jaehwan Cho, Yoosang Hwang
  • Patent number: 10820987
    Abstract: Techniques and mechanisms for the wireless transmission of power and sensor information between two components of an implantable ophthalmic device are disclosed herein. An example device includes an accommodating intraocular lens (aIOL) and separate auxiliary electronics, both enclosed in biocompatible materials. The aIOL includes a dynamic optic, control logic, a battery and an antenna. The auxiliary electronics include an antenna, an energy storage cell, and a sensor. The auxiliary electronics may be wirelessly coupled to the aIOL for the wireless transmission of power and sensor information.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: November 3, 2020
    Assignee: Verily Life Sciences LLC
    Inventors: Brooke C. Basinger, Dimitri Azar, Jeremy Emken, Anil Ram Rakhyani, Patricia E. Johnson, Daniel B. Otts, Sohyun Park
  • Publication number: 20200274069
    Abstract: The present disclosure relates to a conjugated polymer for a low-temperature process, which is capable of forming a uniform thin film over a large area without a heat treatment process due to superior solubility and crystallinity at low temperature and, thus, allows fabrication of an organic solar cell with high efficiency at low temperature.
    Type: Application
    Filed: August 19, 2019
    Publication date: August 27, 2020
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Hae Jung SON, Sungmin PARK, Jong Baek PARK, Sohyun PARK
  • Publication number: 20190000611
    Abstract: Techniques and mechanisms for the wireless transmission of power and sensor information between two components of an implantable ophthalmic device are disclosed herein. An example device includes an accommodating intraocular lens (aIOL) and separate auxiliary electronics, both enclosed in biocompatible materials. The aIOL includes a dynamic optic, control logic, a battery and an antenna. The auxiliary electronics include an antenna, an energy storage cell, and a sensor. The auxiliary electronics may be wirelessly coupled to the aIOL for the wireless transmission of power and sensor information.
    Type: Application
    Filed: August 21, 2018
    Publication date: January 3, 2019
    Inventors: Brooke C. Basinger, Dimitri Azar, Jeremy Emken, Anil Ram Rakhyani, Patricia E. Johnson, Daniel B. Otts, Sohyun Park
  • Patent number: 10092177
    Abstract: A near-eye display including a light source, an optical system, and a phase map including multiple pixels. The optical system is configured to receive illumination light from the light source and output the illumination light as an in-phase wavefront. Control logic of the near-eye display is coupled to variously program different phase patterns of the phase map at different times. The phase patterns are each to variously adjust phases of respective portions of the in-phase wavefront. For each of the phase patterns, the phase map is to form a different respective image in response to being illuminated by the in-phase wavefront.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: October 9, 2018
    Assignee: Verily Life Sciences LLC
    Inventors: Sohyun Park, Igor Landau
  • Patent number: 10076408
    Abstract: Techniques and mechanisms for the wireless transmission of power and sensor information between two components of an implantable ophthalmic device are disclosed herein. An example device includes an accommodating intraocular lens (aIOL) and separate auxiliary electronics, both enclosed in biocompatible materials. The aIOL includes a dynamic optic, control logic, a battery and an antenna. The auxiliary electronics include an antenna, an energy storage cell, and a sensor. The auxiliary electronics may be wirelessly coupled to the aIOL for the wireless transmission of power and sensor information.
    Type: Grant
    Filed: June 27, 2016
    Date of Patent: September 18, 2018
    Assignee: Verily Life Sciences LLC
    Inventors: Brooke C. Basinger, Dimitri Azar, Anil Ram Rakhyani, Jeremy Emken, Daniel B. Otts, Patricia E. Johnson, Sohyun Park
  • Patent number: 9935111
    Abstract: A method of forming a semiconductor device includes forming a molding layer and a supporter layer on a substrate including an etch stop layer, forming a mask layer on the supporter layer, forming a first edge blocking layer on the mask layer, forming a mask pattern by etching the mask layer, forming a hole, forming a lower electrode in the hole, forming a supporter mask layer on the supporter layer, forming a second edge blocking layer on the supporter mask layer, forming a supporter mask pattern by patterning the supporter mask layer, forming a supporter opening passing through the supporter layer, removing the molding layer, forming a capacitor dielectric layer and an upper electrode on the lower electrode, forming an interlayer insulating layer on the upper electrode, and planarizing the interlayer insulating layer. The hole passes through the supporter layer, the molding layer and the etch stop layer.
    Type: Grant
    Filed: June 23, 2017
    Date of Patent: April 3, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eunjung Kim, Sohyun Park, Bong-Soo Kim, Yoosang Hwang, Dong-Wan Kim, Junghoon Han