Abstract: Provided is a fiber structure having a high dust holding capacity. The fiber structure includes a thick fiber group composed of fibers A each having a single fiber diameter larger than 5 ?m and a thin fiber group composed of fibers B each having a single fiber diameter of 5 ?m or smaller, and has an intermingled region in which the thick fiber group and the thin fiber group are intermingled.

Abstract: A method for producing a semiconductor device includes forming, on a substrate, a film to be processed. The method further includes forming, on the film to be processed, a first film containing a metallic element and a second film containing at least one of carbon or boron. The method further includes forming an insulating film on the first and second films. The method further includes processing the film to be processed using the first film, the second film, and the insulating film, as a mask.

Abstract: Provided is an electronic device capable of reducing the possibility of malfunction. An electronic device is provided with: a first substrate including a drive circuit; a second substrate including a light-emitting unit driven by the drive circuit and mounted on one surface side of the first substrate; and a light-shielding unit provided on the first substrate and configured to shield at least a part of the drive circuit from light emitted by the light-emitting unit.

Abstract: An imaging device includes a first substrate, a second substrate, a third substrate, and a switching unit. The first substrate has a pixel including a photodiode and floating diffusion that holds the charge converted by the photodiode. The second substrate has a pixel circuit that reads out a pixel signal based on the charge held in the floating diffusion in the pixel, and is stacked on the first substrate. The third substrate has a processing circuit that detects a pixel signal read out by the pixel circuit, and is stacked on the second substrate. The switching unit is provided to enable electrical connection between the floating diffusion and a floating diffusion of another pixel in the first substrate, and is provided on the second substrate. As a result, by switching the capacitance of the floating diffusion of the pixel using floating diffusion of another pixel, it is possible to switch the charge-voltage conversion efficiency levels.