Abstract: An exposure method for exposing a mask pattern, which includes plural types of patterns, with a high throughput and optimal illumination conditions for each type of pattern. The method includes guiding light from a first spatial light modulator illuminated with pulse lights of illumination light to a second spatial light modulator and exposing a wafer with light from the second spatial light modulator, accompanied by: controlling a conversion state of the second spatial light modulator including a plurality of second mirror elements; and controlling a conversion state of the first spatial light modulator including a plurality of first mirror elements to control intensity distribution of the illumination light on a predetermined plane between the first spatial light modulator and the second spatial light modulator.

Abstract: An exposure apparatus exposes a substrate by projecting a pattern image onto the substrate through a liquid. The exposure apparatus includes a projection optical system by which the pattern image is projected onto the substrate, and a movable member which is movable relative to the projection optical system. A liquid-repellent member, at least a part of a surface of which is liquid-repellent, is provided detachably on the movable member, the liquid-repellent member being different from the substrate.

Abstract: An exposure apparatus exposes a substrate by projecting a pattern image onto the substrate through a liquid. The exposure apparatus includes a projection optical system by which the pattern image is projected onto the substrate, and a movable member which is movable relative to the projection optical system. A liquid-repellent member, at least a part of a surface of which is liquid-repellent, is provided detachably on the movable member, the liquid-repellent member being different from the substrate.

Abstract: A spatial light modulator has a plurality of mirror elements each of which is controllable into a first state in which the mirror element reflects incident light with a change in a phase thereof by a first phase and a second state in which the mirror element reflects the incident light with a change in the phase thereof by a second phase 180° different from the first phase; and a boundary portion arranged between the mirror elements, which changes the phase of the incident light by a third phase substantially (90°+k·180°) (where k is an integer) different from the first phase. In projecting a pattern with the use of the spatial light modulator, an error caused in the pattern can be reduced even if the light quantity of light passing a gap region between the optical elements in the spatial light modulator is large.

Abstract: A spatial light modulator has a plurality of mirror elements each of which is controllable into a first state in which the mirror element reflects incident light with a change in a phase thereof by a first phase and a second state in which the mirror element reflects the incident light with a change in the phase thereof by a second phase 180° different from the first phase; and a boundary portion arranged between the mirror elements, which changes the phase of the incident light by a third phase substantially (90°+k·180°) (where k is an integer) different from the first phase. In projecting a pattern with the use of the spatial light modulator, an error caused in the pattern can be reduced even if the light quantity of light passing a gap region between the optical elements in the spatial light modulator is large.

Abstract: An exposure method for exposing a mask pattern, which includes plural types of patterns, with a high throughput and optimal illumination conditions for each type of pattern. The method includes guiding light from a first spatial light modulator illuminated with pulse lights of illumination light to a second spatial light modulator and exposing a wafer with light from the second spatial light modulator, accompanied by: controlling a conversion state of the second spatial light modulator including a plurality of second mirror elements; and controlling a conversion state of the first spatial light modulator including a plurality of first mirror elements to control intensity distribution of the illumination light on a predetermined plane between the first spatial light modulator and the second spatial light modulator.

Abstract: An exposure method for exposing a mask pattern, which includes plural types of patterns, with a high throughput and optimal illumination conditions for each type of pattern. The method includes guiding light from a first spatial light modulator illuminated with pulse lights of illumination light to a second spatial light modulator and exposing a wafer with light from the second spatial light modulator, accompanied by: controlling a conversion state of the second spatial light modulator including a plurality of second mirror elements; and controlling a conversion state of the first spatial light modulator including a plurality of first mirror elements to control intensity distribution of the illumination light on a predetermined plane between the first spatial light modulator and the second spatial light modulator.

Abstract: An exposure apparatus exposes a substrate by irradiating exposure light on the substrate through liquid. The exposure apparatus has a substrate holder for holding the substrate, a substrate stage capable of moving the substrate held by the substrate holder, and a temperature adjusting system for adjusting the temperature of the substrate holder. The temperature of the substrate is controlled so that there is no difference in temperature between the substrate and the liquid, thereby preventing a reduction in exposure accuracy resulting from variation in temperature of the liquid.

Abstract: A spatial light modulator has a plurality of mirror elements each of which is controllable into a first state in which the mirror element reflects incident light with a change in a phase thereof by a first phase and a second state in which the mirror element reflects the incident light with a change in the phase thereof by a second phase 180° different from the first phase; and a boundary portion arranged between the mirror elements, which changes the phase of the incident light by a third phase substantially (90°+k·180°) (where k is an integer) different from the first phase. In projecting a pattern with the use of the spatial light modulator, an error caused in the pattern can be reduced even if the light quantity of light passing a gap region between the optical elements in the spatial light modulator is large.

Abstract: An optical material which has a relative permeability different from 1 to light having a wavelength in, for example, the infrared region or shorter than the infrared region and which is stable in structure, and a liquid and a solid (optical element) using the optical material. The optical material is a powder used as a component of a liquid or solid to which an illuminating light is irradiated, and includes a large number of resonating elements which constitute the powder and each of which is formed of a conductor having a width approximately same as or smaller than a wavelength of the illumination light, and a protective film which is formed of a disc-shaped insulator, wherein an entire surface of each of the split-rind resonators is covered by the protective film.

Abstract: An exposure method for exposing a mask pattern, which includes plural types of patterns, with a high throughput and optimal illumination conditions for each type of pattern. The method includes guiding light from a first spatial light modulator illuminated with pulse lights of illumination light to a second spatial light modulator and exposing a wafer with light from the second spatial light modulator, accompanied by: controlling a conversion state of the second spatial light modulator including a plurality of second mirror elements; and controlling a conversion state of the first spatial light modulator including a plurality of first mirror elements to control intensity distribution of the illumination light on a predetermined plane between the first spatial light modulator and the second spatial light modulator.

Abstract: An exposure apparatus exposes a substrate by irradiating exposure light on the substrate through liquid. The exposure apparatus has a substrate holder for holding the substrate, a substrate stage capable of moving the substrate held by the substrate holder, and a temperature adjusting system for adjusting the temperature of the substrate holder. The temperature of the substrate is controlled so that there is no difference in temperature between the substrate and the liquid, thereby preventing a reduction in exposure accuracy resulting from variation in temperature of the liquid.

Abstract: An optical material which has a relative permeability different from 1 to light having a wavelength in, for example, the infrared region or shorter than the infrared region and which is stable in structure, and a liquid and a solid (optical element) using the optical material. The optical material is a powder used as a component of a liquid or solid to which an illuminating light is irradiated, and includes a large number of resonating elements which constitute the powder and each of which is formed of a conductor having a width approximately same as or smaller than a wavelength of the illumination light, and a protective film which is formed of a disc-shaped insulator, wherein an entire surface of each of the split-ring resonators is covered by the protective film.

Abstract: A spatial light modulator has a plurality of mirror elements each of which is controllable into a first state in which the mirror element reflects incident light with a change in a phase thereof by a first phase and a second state in which the mirror element reflects the incident light with a change in the phase thereof by a second phase 180° different from the first phase; and a boundary portion arranged between the mirror elements, which changes the phase of the incident light by a third phase substantially (90°+k·180°) (where k is an integer) different from the first phase. In projecting a pattern with the use of the spatial light modulator, an error caused in the pattern can be reduced even if the light quantity of light passing a gap region between the optical elements in the spatial light modulator is large.

Abstract: An exposure apparatus exposes a substrate by projecting a pattern image onto the substrate through a liquid. The exposure apparatus includes a projection optical system by which the pattern image is projected onto the substrate, and a movable member which is movable relative to the projection optical system. A liquid-repellent member, at least a part of a surface of which is liquid-repellent, is provided detachably on the movable member, the liquid-repellent member being different from the substrate.

Abstract: An exposure method for exposing a mask pattern, which includes plural types of patterns, with a high throughput and optimal illumination conditions for each type of pattern. The method includes guiding light from a first spatial light modulator illuminated with pulse lights of illumination light to a second spatial light modulator and exposing a wafer with light from the second spatial light modulator, accompanied by: controlling a conversion state of the second spatial light modulator including a plurality of second mirror elements; and controlling a conversion state of the first spatial light modulator including a plurality of first mirror elements to control intensity distribution of the illumination light on a predetermined plane between the first spatial light modulator and the second spatial light modulator.

Abstract: During a period after starting exposure to a plurality of shot areas subject to exposure on a wafer until completing the exposure, a light via a slit pair arranged on a stage that holds the wafer, of illumination light via a pattern generating device, is received, and information on a positional relation between an illumination light and the stage (and hence a positional relation between the illumination light and the wafer) is detected. With this operation, even if the information on the positional relation between the illumination light and the wafer varies due to some reason, information on the variation can be detected while performing the exposure to the plurality of shot areas. Accordingly, high-precision exposure can be achieved in an exposure operation, by considering this detection results.

Abstract: An exposure apparatus exposes a substrate by projecting a pattern image onto the substrate through a liquid. The exposure apparatus includes a projection optical system by which the pattern image is projected onto the substrate, and a movable member which is movable relative to the projection optical system. A liquid-repellent member, at least a part of a surface of which is liquid-repellent, is provided detachably on the movable member, the liquid-repellent member being different from the substrate.

Abstract: An exposure apparatus exposes a substrate by projecting a pattern image onto the substrate through a liquid. The exposure apparatus includes a projection optical system by which the pattern image is projected onto the substrate, and a movable member which is movable relative to the projection optical system. A liquid-repellent member, at least a part of a surface of which is liquid-repellent, is provided detachably on the movable member, the liquid-repellent member being different from the substrate.

Abstract: An exposure apparatus is provided with a projection optical system, and the projection optical system includes a first optical element disposed most closely to an image plane of the projection optical system. The exposure apparatus includes a first liquid immersion mechanism which forms a first liquid immersion area of a first liquid between the first optical element and an upper surface of a transparent member provided on a side of the image plane of the projection optical system, and an observation unit which observes a state of the first liquid immersion area. It is possible to grasp the state of the liquid immersion area of the liquid, thereby executing optimum liquid immersion exposure.