Patents by Inventor Soichiro Arimura
Soichiro Arimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160148484Abstract: Provided is a warning system that makes it possible to decrease the possibility of the occurrence of heat shock that is caused by a difference in temperature between a living room and a dressing room when a person who is about to enter a bath removes their clothing. The warning system comprises: a living room temperature sensor (28) that measures the temperature in a living room (4); a dressing room temperature sensor (54) that measures the temperature in a dressing room (8); and a warning unit (50) that issues a warning when the temperature difference between the temperature of the living room (4) and the temperature of the dressing room (8) is equal to or greater than a predetermined value.Type: ApplicationFiled: July 18, 2014Publication date: May 26, 2016Inventors: Soichiro ARIMURA, Masahide TANAKA
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Patent number: 8975645Abstract: Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range ? and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range ? is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.Type: GrantFiled: November 13, 2013Date of Patent: March 10, 2015Assignee: Rohm Co., Ltd.Inventors: Ken Nakahara, Shunsuke Akasaka, Koki Sakamoto, Tetsuo Fujii, Shunsuke Furuse, Soichiro Arimura
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Publication number: 20140071525Abstract: Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range ? and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range ? is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.Type: ApplicationFiled: November 13, 2013Publication date: March 13, 2014Applicant: ROHM CO., LTD.Inventors: Ken NAKAHARA, Shunsuke AKASAKA, Koki SAKAMOTO, Tetsuo FUJII, Shunsuke FURUSE, Soichiro ARIMURA
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Patent number: 8610133Abstract: Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range ? and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range ? is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.Type: GrantFiled: October 14, 2011Date of Patent: December 17, 2013Assignee: Rohm Co., Ltd.Inventors: Ken Nakahara, Shunsuke Akasaka, Koki Sakamoto, Tetsuo Fujii, Shunsuke Furuse, Soichiro Arimura
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Publication number: 20120234381Abstract: A dye-sensitized solar cell (DSC) is provided, which has an elevated voltage and thus an improved performance achieved with an electrolyte formed by mixing multiple redox electrolytes of an electrolyte solution. The DSC includes: a first substrate 20; a first electrode 10, disposed on the first substrate 20; a porous semiconductor layer 12, disposed on the first electrode 10, and containing semiconductor particles 2 and dye molecules 4; an electrolyte solution 14, formed by dissolving a redox electrolyte in a solvent, in contact with the porous semiconductor layer 12; a second electrode 18, in contact with the electrolyte solution 14; a second substrate 22, disposed on the second electrode 18; and a sealant 16, disposed between the first substrate 20 and the second substrate 22, for sealing the electrolyte solution 14. The redox electrolyte includes an electrolyte formed by mixing multiple redox electrolytes.Type: ApplicationFiled: March 15, 2012Publication date: September 20, 2012Applicant: ROHM CO., LTD.Inventors: SOICHIRO ARIMURA, HIROKI TSUJIMURA, SHUNSUKE FURUSE
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Publication number: 20120199826Abstract: Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range ? and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range ? is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.Type: ApplicationFiled: October 14, 2011Publication date: August 9, 2012Applicant: ROHM CO., LTD.Inventors: Ken NAKAHARA, Shunsuke AKASAKA, Koki SAKAMOTO, Tetsuo FUJII, Shunsuke FURUSE, Soichiro ARIMURA
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Patent number: 7856046Abstract: A surface emitting laser diode includes a ring-shaped first semiconductor layer including an n-type clad layer, a ring-shaped active layer provided on the first semiconductor layer, and a ring-shaped second semiconductor layer which is provided on the active layer and includes a p-type clad layer and a grating layer including grating units continuously arranged in a circumferential direction, each grating unit including a plurality of regions having different refractive indices and being adjacent to each other in the circumferential direction.Type: GrantFiled: November 6, 2008Date of Patent: December 21, 2010Assignee: Rohm Co., Ltd.Inventor: Soichiro Arimura
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Publication number: 20090116527Abstract: A surface emitting laser diode includes a ring-shaped first semiconductor layer including an n-type clad layer, a ring-shaped active layer provided on the first semiconductor layer, and a ring-shaped second semiconductor layer which is provided on the active layer and includes a p-type clad layer and a grating layer including grating units continuously arranged in a circumferential direction, each grating unit including a plurality of regions having different refractive indices and being adjacent to each other in the circumferential direction.Type: ApplicationFiled: November 6, 2008Publication date: May 7, 2009Applicant: ROHM CO., LTD.Inventor: Soichiro Arimura