Abstract: A Cd-free chalcopyrite-based quantum dot with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dot contains ZnAgInxGa1-xSySe1-y (0?x<1 and 0?y?1), and exhibits fluorescence properties that can include a fluorescence full width at half maximum of less than or equal to 33 nm, and a fluorescence quantum yield of greater than or equal to 70% in a green wavelength range to a red wavelength range. The quantum dot has a core-shell structure including a core and a shell covering the core, and the shell preferably contains Zn.

Abstract: A quantum dot having a narrow fluorescence half-width and a high fluorescence quantum yield has a core-shell structure including a core formed from ZnSe or ZnSeTe, and a shell that covers the core and is formed from ZnS, wherein a particle diameter of the quantum dot is 5 nm or more and 20 nm or less, and wherein a surface of the core-shell structure is modified with a zinc halide. The quantum dot has a fluorescence quantum yield of 75% or more and a fluorescence half-width of 25 nm or less. The fluorescence lifetime can be made 50 ns or less.

Abstract: To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgInxGa1?xSySe1?y or ZnAgInxGa1?xSySe1?y (where 0?x<1 and 0?y?1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.

Abstract: An object is to provide a quantum dot that has a narrow fluorescence half-width and a high fluorescence quantum yield, and emits blue fluorescence. A quantum dot (5) according to the present invention includes at least Zn and Se and does not include Cd, and has a particle diameter of 5 nm or more and 20 nm or less. In addition, the quantum dot (5) according to the present invention includes at least Zn and Se and does not include Cd, and has a fluorescence quantum yield of 58 or more and a fluorescence half-width of 25 nm or less. In the present invention, the fluorescence lifetime can be made 50 ns or less.

Abstract: A Cd-free blue fluorescent quantum dot with a narrow fluorescence FWHM. The quantum dot does not contain cadmium and its fluorescence FWHM is 25 nm or less. The quantum dot is preferably a nanocrystal containing zinc and selenium or zinc and selenium and sulfur. Further, the quantum dot preferably has a core-shell structure in which the nanocrystal serves as a core and the surface of the core is coated with a shell.

Abstract: A wavelength conversion member, for a backlight, is provided. The wavelength conversion member includes a stack of a plurality of resin layers, with at least one of the plurality of resin layers containing quantum dots. The plurality of resin layers is integrally molded through co-extrusion, and forms a three-layer structure comprising a middle layer containing the quantum dots and upper and lower layers that do not contain the quantum dots. The upper layer and the lower layer are respectively on an upper side and a lower side of the middle layer. The upper and lower layers each contain a light scattering agent. Each of the plurality of resin layers is directly joined together with a bonding layer at an interface between the middle layer and the upper layer and not at an interface between the middle layer and the lower layer.

Abstract: A QD is a Cd-free quantum dot including a core and a shell and configured to emit blue light. The core at least contains Zn and Se. The shell has a film thickness in a range from 0.5 nm to 3 nm, contains Zn, Se, and S in a boundary portion adjacent to the core, and contains Zn and S in an outermost portion.

Abstract: A quantum dot includes a core including Zn and Se, and a shell composed of ZnS and provided on a surface of the core, adjacently to the core. The quantum dot-emits blue light, is Cd free, and has a particle diameter within a range from 3 nm to 20 nm and a fluorescence lifetime in a thin film state of 50 ns or less.

Abstract: A wavelength conversion member, for a backlight, is provided. The wavelength conversion member includes a stack of a plurality of resin layers, with at least one of the plurality of resin layers containing quantum dots. The plurality of resin layers is integrally molded through co-extrusion, and forms a three-layer structure comprising a middle layer containing the quantum dots and upper and lower layers that do not contain the quantum dots. The upper layer and the lower layer are respectively on an upper side and a lower side of the middle layer. The upper and lower layers each contain a light scattering agent. Each of the plurality of resin layers is directly joined together with a bonding layer at an interface between the middle layer and the upper layer and not at an interface between the middle layer and the lower layer.

Abstract: An object is to provide a quantum dot that has a narrow fluorescence half-width and a high fluorescence quantum yield, and emits blue fluorescence. A quantum dot (5) according to the present invention includes at least Zn and Se and does not include Cd, and has a particle diameter of 5 nm or more and 20 nm or less. In addition, the quantum dot (5) according to the present invention includes at least Zn and Se and does not include Cd, and has a fluorescence quantum yield of 58 or more and a fluorescence half-width of 25 nm or less. In the present invention, the fluorescence lifetime can be made 50 ns or less.

Abstract: A light-emitting element includes an anode electrode, a QD layer containing QDs, and a cathode electrode, in which the QDs are Cd-free quantum dots having a core-shell structure including a core containing at least Ag, Ga, and at least one of S and Se, and a shell containing at least Zn, and exhibit fluorescence characteristics with a fluorescence full-width at half-maximum of 40 nm or less and a fluorescence quantum yield percentage of 70% or more.

Abstract: A Cd-free blue fluorescent quantum dot with a narrow fluorescence FWHM. The quantum dot does not contain cadmium and its fluorescence FWHM is 25 nm or less. The quantum dot is preferably a nanocrystal containing zinc and selenium or zinc and selenium and sulfur. Further, the quantum dot preferably has a core-shell structure in which the nanocrystal serves as a core and the surface of the core is coated with a shell.

Abstract: An object is to provide a quantum dot that has a narrow fluorescence half-width and a high fluorescence quantum yield, and emits blue fluorescence. A quantum dot (5) according to the present invention includes at least Zn and Se and does not include Cd, and has a particle diameter of 5 nm or more and 20 nm or less. In addition, the quantum dot (5) according to the present invention includes at least Zn and Se and does not include Cd, and has a fluorescence quantum yield of 5% or more and a fluorescence half-width of 25 nm or less. In the present invention, the fluorescence lifetime can be made 50 ns or less.

Abstract: A light-emitting element includes an anode electrode, a cathode electrode, and a QD layer provided between the anode electrode and the cathode electrode, the QD layer containing the QDs. The QDs are AgInxGa1-xSySe1-y-based or ZnAgInxGa1-xSySe1-y-based Cd-free QDs (0?x<1, 0?y?1) and exhibit fluorescence characteristics having a fluorescent half width of 45 nm or less and a fluorescence quantum yield of 35% or more in a green wavelength region to a red wavelength region.

Abstract: An object of the present invention is to provide a method for manufacturing quantum dots capable of containing a large amount of Zn on a surface thereof, and a quantum dot. A method for manufacturing quantum dots of the present invention includes a step of producing a core containing at least Ag, Ga, and S or Ag, Ga, and Se, and a step of coating a surface of the core with a shell, and in the step of coating with the shell, the surface of the core is coated with GaS, and then Zn is added. It is preferable that the surface of the core is coated with ZnS after being coated with GaS. It is preferable that the core and the shell do not contain Cd and In.

Abstract: To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgInxGa1-xSySe1-y or ZnAgInxGa1-xSySe1-y (where 0?x<1 and 0?y?1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.

Abstract: To provide a quantum dot-containing resin sheet or film, a method for producing the same, and a wavelength conversion member that can, in particular, solve the problem of aggregation of the quantum dots and the problem with the use of a scattering agent, suppress a decrease in light conversion efficiency, and improve the light conversion efficiency of a resin molded product containing quantum dots. The quantum dot-containing resin sheet or film of the present invention includes a stack of a plurality of resin layers, at least one of the resin layers containing quantum dots, and the plurality of resin layers is integrally molded through co-extrusion.

Abstract: Provided is a Cd-free blue fluorescent quantum dot with a narrow fluorescence FWHM. The quantum dot does not contain cadmium and its fluorescence FWHM is 25 nm or less. The quantum dot is preferably a nanocrystal containing zinc and selenium or zinc and selenium and sulfur. Further, the quantum dot preferably has a core-shell structure in which the nanocrystal serves as a core and the surface of the core is coated with a shell.

Abstract: To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgInxGa1-xSySe1-y or ZnAgInxGa1-xSySe1-y (where 0?x<1 and 0?y?1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.

Abstract: A quantum dot (QD) dispersion solution includes QD phosphor particles, ligands, and a solvent. Each ligand includes a thiol group and at least one functional group of ester groups and ether groups. The solvent is propylene glycol monomethyl ether acetate.