Abstract: In an intermediate layer formed between a base material and a DLC layer, a Ti layer and a TiC layer formed on a surface of the Ti layer are provided, and a carbon content of the entire layer containing the Ti layer and the TiC layer is 53 at % or more and 77 at % or less.

Abstract: In an intermediate layer formed between a base material and a DLC layer, a Ti layer and a TiC layer formed on a surface of the Ti layer are provided, and a carbon content of the entire layer containing the Ti layer and the TiC layer is 53 at % or more and 77 at % or less.

Abstract: [Problem] To produce a DLC film excellent in hardness and adhesiveness while preventing a film-forming rate from slowing even when the gas pressure in a chamber is a low pressure without requiring a large-scale facility such as a thermostatic device. [solution] There is provided a DLC film film-forming method being a film-forming method to film-form a DLC film on a substrate by a plasma CVD method, the method including: setting a voltage to be applied to a substrate using a DC pulse power supply to a bias voltage; using an acetylene gas or a methane gas as a film-forming gas to be supplied into a chamber; setting the total pressure of the gas in the chamber to not less than 0.5 Pa and not more than 3 Pa when the methane gas is used; setting the total pressure of the gas in the chamber to not less than 0.3 Pa and not more than 3 Pa when the acetylene gas is used; and setting the bias voltage to not less than 0.9 kV and not more than 2.2 kV.

Abstract: An intermediate layer forming method to form an intermediate layer formed between a base material and a DLC film using a PVD method includes: a Ti layer film-forming step of film-forming a Ti layer on a base material; and a TiC layer film-forming step of film-forming a TiC layer on the Ti layer, in which in the Ti layer film-forming step, an Ar gas is supplied into a chamber into which the base material is carried and a film-forming pressure is set to a pressure in a range of not less than 0.4 Pa and not more than 1 Pa to film-form the Ti layer, and in the TiC layer film-forming step, an Ar gas and a CH4 gas are supplied into the chamber, a film-forming pressure is set to a pressure in a range of 0.2 Pa or more to less than 0.4 Pa, and a second bias voltage higher in bias voltage than a first bias voltage applied to the base material in the Ti layer film-forming step and higher in bias voltage than ?100 V is applied to the base material to film-form the TiC layer.

Abstract: [Problem] To produce a DLC film excellent in hardness and adhesiveness while preventing a film-forming rate from slowing even when the gas pressure in a chamber is a low pressure without requiring a large-scale facility such as a thermostatic device. [solution] There is provided a DLC film film-forming method being a film-forming method to film-form a DLC film on a substrate by a plasma CVD method, the method including: setting a voltage to be applied to a substrate using a DC pulse power supply to a bias voltage; using an acetylene gas or a methane gas as a film-forming gas to be supplied into a chamber; setting the total pressure of the gas in the chamber to not less than 0.5 Pa and not more than 3 Pa when the methane gas is used; setting the total pressure of the gas in the chamber to not less than 0.3 Pa and not more than 3 Pa when the acetylene gas is used; and setting the bias voltage to not less than 0.9 kV and not more than 2.2 kV.

Abstract: An intermediate layer forming method to form an intermediate layer formed between a base material and a DLC film using a PVD method includes: a Ti layer film-forming step of film-forming a Ti layer on a base material; and a TiC layer film-forming step of film-forming a TiC layer on the Ti layer, in which in the Ti layer film-forming step, an Ar gas is supplied into a chamber into which the base material is carried and a film-forming pressure is set to a pressure in a range of not less than 0.4 Pa and not more than 1 Pa to film-form the Ti layer, and in the TiC layer film-forming step, an Ar gas and a CH4 gas are supplied into the chamber, a film-forming pressure is set to a pressure in a range of 0.2 Pa or more to less than 0.4 Pa, and a second bias voltage higher in bias voltage than a first bias voltage applied to the base material in the Ti layer film-forming step and higher in bias voltage than ?100 V is applied to the base material to film-form the TiC layer.