Abstract: A photoelectric conversion element of an embodiment includes a p-type light absorbing layer containing Cu, at least one or more Group IIIb elements selected from the group including Al, In and Ga, and at least one or more elements selected from the group including O, S, Se and Te; and an n-type semiconductor layer formed on the p-type light absorbing layer and represented by any one of Zn1-yMyO1-xSx, Zn1-y-zMgzMyO (wherein M represents at least one element selected from the group including B, Al, In and Ga), and GaP with a controlled carrier concentration, while x, y and z in the formulas Zn1-yMyO1-xSx and Zn1-y-zMgzMyO satisfy the following relations: 0.55?x?1.0, 0.001?y?0.05, and 0.002?y+z?1.0.

Abstract: A photoelectric conversion element of an embodiment includes: a light absorbing layer containing Cu, at least one Group IIIb element selected from the group including Al, In and Ga, and S or Se, and having a chalcopyrite structure; and a buffer layer formed from Zn and O or S, in which the ratio S/(S+O) in the area extending in the buffer layer up to 10 nm from the interface between the light absorbing layer and the buffer layer, is equal to or greater than 0.7 and equal to or less than 1.0.