Abstract: A device to host a crystallization medium, such as a solution, for crystal growth and a system for X-ray diffraction experiments to determine the atomic structure of crystals. A plurality of cells have a well, a sample holder placed in the well. The solution is hosted in the sample holder between thin-plates or one thin-plate. A cap seals an opening to the cell and each sample holder can be extracted independently from each well. A system for automated X-ray diffraction experiments for small crystals in the sample holder extracted from the wells utilizes an ultrasonic acoustic levitator to determine the crystal structure at atomic resolution. X-ray diffraction images are generated by scanning the X-ray beam over the levitated sample holder along a spiral trajectory by rotating the sample holder and moving in the direction perpendicular to the X-ray beam and the rotation axis at the same time.

Abstract: A device to host a crystallization medium, such as a solution, for crystal growth and a system for X-ray diffraction experiments to determine the atomic structure of crystals. A plurality of cells have a well, a sample holder placed in the well. The solution is hosted in the sample holder between thin-plates or one thin-plate. A cap seals an opening to the cell and each sample holder can be extracted independently from each well. A system for automated X-ray diffraction experiments for small crystals in the sample holder extracted from the wells utilizes an ultrasonic acoustic levitator to determine the crystal structure at atomic resolution. X-ray diffraction images are generated by scanning the X-ray beam over the levitated sample holder along a spiral trajectory by rotating the sample holder and moving in the direction perpendicular to the X-ray beam and the rotation axis at the same time.

Abstract: A method and a system for resolving a crystal structure of a crystal at atomic resolution by collecting X-ray diffraction images. The method includes the steps: a) ejecting a droplet of fluid comprising single or multiple of crystal into an ultrasonic acoustic levitator; b) levitating the droplet of fluid with the crystal in the ultrasonic acoustic levitator; b) monitoring the position and the spinning of the droplet with a visualization apparatus; c) applying X-ray to the crystal, the X-ray stemming from an X-ray source; and d) detecting the X-ray diffraction images from the crystal irradiated by the X-ray source by an X-ray detector being capable to capture two dimensional diffraction patterns.

Abstract: A method and a system for resolving a crystal structure of a crystal at atomic resolution by collecting X-ray diffraction images. The method includes the steps: a) ejecting a droplet of fluid comprising single or multiple of crystal into an ultrasonic acoustic levitator; b) levitating the droplet of fluid with the crystal in the ultrasonic acoustic levitator; b) monitoring the position and the spinning of the droplet with a visualization apparatus; c) applying X-ray to the crystal, the X-ray stemming from an X-ray source; and d) detecting the X-ray diffraction images from the crystal irradiated by the X-ray source by an X-ray detector being capable to capture two dimensional diffraction patterns.

Abstract: A method of manufacturing field-emitter arrays by a molding technique includes uniformly controlling a shape of mold holes to obtain field emitter tips having diameters below 100 nm and blunted side edges. Repeated oxidation and etching of a mold substrate formed of single-crystal semiconductor mold wafers is carried out, wherein the mold holes for individual emitters are fabricated by utilizing the crystal orientation dependence of the etching rate.

Abstract: A method of manufacturing field-emitter arrays by a molding technique includes uniformly controlling a shape of mold holes to obtain field emitter tips having diameters below 100 nm and blunted side edges. Repeated oxidation and etching of a mold substrate formed of single-crystal semiconductor mold wafers is carried out, wherein the mold holes for individual emitters are fabricated by utilizing the crystal orientation dependence of the etching rate.

Abstract: Optical modulators include active quantum well structures coherent with pseudosubstrates comprising relaxed buffer layers on a silicon substrate. In a preferred method the active structures, consisting of Si1?x Gex barrier and well layers with different Ge contents x, are chosen in order to be strain compensated. The Ge content in the active structures may vary in a step-wise fashion along the growth direction or in the form of parabolas within the quantum well regions. Optical modulation may be achieved by a plurality of physical effects, such as the Quantum Confined or Optical Stark Effect, the Franz-Keldysh Effect, exciton quenching by hole injection, phase space filling, or temperature modulation. In a preferred method the modulator structures are grown epitaxially by low-energy plasma-enhanced chemical vapor deposition (LEPCVD).