Abstract: According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode layers separately stacked each other; a plurality of columnar sections provided in the stacked body and extending in a stacking direction of the stacked body; and a first insulating section separating the stacked body. The respective columnar sections include a semiconductor body extending in the stacking direction; and a charge storage film provided between the semiconductor body and the plurality of electrode layers. The first insulating section includes a first air gap.

Abstract: According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode layers separately stacked each other; a plurality of columnar sections provided in the stacked body and extending in a stacking direction of the stacked body; and a first insulating section separating the stacked body. The respective columnar sections include a semiconductor body extending in the stacking direction; and a charge storage film provided between the semiconductor body and the plurality of electrode layers. The first insulating section includes a first air gap.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes: a stacked body, each of a plurality of electrode layers and each of a plurality of insulating layers being stacked alternately in the stacked body; an interlayer insulating film provided on the stacked body; a gate electrode provided on the interlayer insulating film; a semiconductor layer extending from an upper end of the gate electrode to a lower face of the stacked body; a first insulating film provided between the semiconductor layer and each of the plurality of electrode layers and including at least one layer of a nitride film; and a second insulating film provided between the gate electrode and the semiconductor layer and including at least one layer of a nitride film, a film thickness of at least a part of the second insulating film being thinner than a film thickness of the first insulating film.

Abstract: A semiconductor memory device includes plural word lines, plural first bit lines, plural plate lines formed corresponding to the word lines, plural second bit lines formed corresponding to the first bit lines, plural first ferroelectric capacitors each including a ferroelectric film between two electrodes, plural cell transistor formed corresponding to the first ferroelectric capacitors, and including a gate coupled to the word lines, plural second ferroelectric capacitors each including a ferroelectric film between two electrodes, and a sense amplifier configured to detect data stored in the first ferroelectric capacitors through the first bit lines or data stored in the second ferroelectric capacitors through the second bit line, or to write data in the first ferroelectric capacitors or the second ferroelectric capacitors.

Abstract: A semiconductor memory device includes plural word lines, plural first bit lines, plural plate lines formed corresponding to the word lines, plural second bit lines formed corresponding to the first bit lines, plural first ferroelectric capacitors each including a ferroelectric film between two electrodes, plural cell transistor formed corresponding to the first ferroelectric capacitors, and including a gate coupled to the word lines, plural second ferroelectric capacitors each including a ferroelectric film between two electrodes, and a sense amplifier configured to detect data stored in the first ferroelectric capacitors through the first bit lines or data stored in the second ferroelectric capacitors through the second bit line, or to write data in the first ferroelectric capacitors or the second ferroelectric capacitors.

Abstract: A semiconductor device which can prevent the degradation of contact yield even when subjected to a high-temperature and long-time thermal process, and a manufacturing method thereof are provided. The semiconductor device includes: a first semiconductor circuit formed on a semiconductor substrate; a second semiconductor circuit formed above the first semiconductor circuit; an interlayer insulating film formed between the first semiconductor circuit and the second semiconductor circuit; and a contact plug formed in a state of penetrating the interlayer insulating film, the contact plug including a contact plug body made up of a conductor, and a contact plug coating which is insulating and which covers at least a portion of a side face of the contact plug body in contact with the interlayer insulating film.