Abstract: Provided are a transmitter and a method for transmitting a data block in a wireless communication system. The method comprises the following steps: deciding the number of bits (s) and encoders (NES) to allocate to one axis of a signal constellation; encoding an information bit based on the s and the NES and generating a coded block; parsing the coded block based on the s and the NES and generating a plurality of frequency sub-blocks; and transmitting the plurality of frequency sub-blocks to a receiver.

Abstract: A display device comprises a pad electrode disposed on a substrate, a pad electrode upper layer disposed on the pad electrode, a first pad electrode capping layer disposed on the pad electrode upper layer, a second pad electrode capping layer disposed on the first pad electrode capping layer, a protective layer disposed on the second pad electrode capping layer, and a capping layers disposed on the protective layer. The protective layer comprises a polymer resin and scattering particles. The protective layer comprises a first pad opening exposing the second pad electrode capping layer.

Abstract: A silicon nitride etching composition effective to selectively etch a silicon nitride film contains an inorganic acid; a silicon-based compound; from 0.01 to 1 wt%, based on total weight of the etching composition, of an ammonium-based compound composed of ammonium acetic acid; and water. The silicon-based compound may be represented by Chemical Formula 1 below or Chemical Formula 2 below, (R1)3-Si-R2-Si-(R1)3??Chemical Formula 1, (R3)3-Si-R4-Si-(R3)3??Chemicl Formula 2. A method of etching a silicon nitride film includes providing the etching composition; and wet etching the silicon nitride film in the etching composition at an etching rate that is at least 200 times faster than a corresponding silicon oxide film.

Abstract: Provided is an etchant composition for a silicon nitride film, and more particularly, to an etchant composition with a high selectivity to a silicon nitride film, which is used to etch away a silicon nitride film in semiconductor process and which selectively has a high etching rate for the silicon nitride film compared to a silicon oxide film in a high temperature etch process, in which the etchant composition with the high selectivity selectively etches the silicon nitride film at a selectivity of 2000:1 or higher between the silicon nitride film and the silicon oxide film which are in a stack structure, and minimizes damages to the silicon oxide film and etching rate, and does not cause re-growth of the silicon oxide film over the process time.

Abstract: Provided is a composition for etching a silicon nitride film, which contains inorganic acid, silicon compound, and water, and does not contain fluorine, and which can selectively remove the silicon nitride film, while minimizing damages to the underlying metal film and the etching rate of the silicon oxide film.

Abstract: Provided is an etchant composition for a silicon nitride film, and more particularly, to an etchant composition with a high selectivity to a silicon nitride film, which is used to etch away a silicon nitride film in semiconductor process and which selectively has a high etching rate for the silicon nitride film compared to a silicon oxide film in a high temperature etch process, in which the etchant composition with the high selectivity selectively etches the silicon nitride film at a selectivity of 2000:1 or higher between the silicon nitride film and the silicon oxide film which are in a stack structure, and minimizes damages to the silicon oxide film and etching rate, and does not cause re-growth of the silicon oxide film over the process time.

Abstract: A heat exchanger is provided that is capable of performing heat exchange more efficiently by using slits. The heat exchanger includes a refrigerant pipe for allowing a refrigerant to flow therethrough, at least one fin disposed such that the refrigerant pipe penetrates through the at least one fin for performing heat exchange with air passing by the at least one fin, at least one slit formed by partially cutting out the at least one fin, and at least one slit fin extending from the at least one fin adjacent to one side edge of the at least one slit for inducing turbulent flow in air flowing along a flow channel spaced a predetermined distance from the at least one fin. The width of the at least one slit is greater than or equal to ? of the diameter of the refrigerant pipe. Turbulent flow is induced in air flowing through the heat exchanger by one side edge of the slit disposed downstream of the flow direction of air. Consequently, heat exchange efficiency of the heat exchanger is improved.

Abstract: Manifold systems and methods for delivering samples of microelectronic device processing gases to gas analyzers include a first passage that receives microelectronic device processing gas from a gas source and discharges the gas at a set pressure through a second passage to a selected gas analyzer. A third passage supplies low-pressure cleaning gas to clean the first and second passages. Multiple gas sources can be connected to multiple gas analyzers via a single manifold system. Steps for distributing semiconductor device processing gas from a gas source to a gas analyzer include purging the first and second passages with low-pressure cleaning gas to remove contaminants. After removing the low-pressure gas from the first and second passages, the first and second passages are isolated from each other and a semiconductor processing gas is discharged from a gas source into the isolated first passage.