Abstract: Disclosed herein are proton transport membranes and methods of making and use thereof. The proton transport membranes comprise: a two-dimensional (2D) material having a top surface and a bottom surface; wherein the two-dimensional material comprises graphene and hexagonal-boron nitride in an atomic ratio of from 100:0 to 0:100. In some examples: the top surface is functionalized with a first functional moiety and the bottom surface is not functionalized; the top surface is functionalized with a first functional moiety and the bottom surface is functionalized with the first functional moiety; or the top surface is functionalized with a first functional moiety and the bottom surface is functionalized with a second functional moiety, the second functional moiety being different than the first functional moiety. In some examples, the two-dimensional material is doped with a substitutional dopant in an amount of from greater than 0 atomic % (at %) to less than 100 at %.

Abstract: A method for manufacturing a silicon carbide semiconductor device. In one embodiment, the method includes the following steps: a layer of silicon dioxide is formed on a silicon carbide substrate to create a silicon dioxide/silicon carbide interface and then nitrogen is incorporated at the silicon dioxide/silicon carbide interface for reduction in an interface trap density. The silicon carbide substrate, in one embodiment, includes a n-type 4H-silicon carbide.