Patents by Inventor Solenn Berson
Solenn Berson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11139433Abstract: The invention concerns a solution of tungstate ions W6+ (VI) comprising as solvent at least one optionally partly etherified polyalcohol, a preparation method and uses thereof. The invention further concerns a layer comprising at least one tungsten oxide WOz comprising one or more polyoxotungstate complexes, methods for preparing the same and uses thereof, and in particular a photovoltaic device comprising said layer of material.Type: GrantFiled: January 12, 2017Date of Patent: October 5, 2021Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, UNIVERSITE DE NANTESInventors: Luc Brohan, Mireille Richard-Plouet, Moustafa El Kass, Noëlla Lemaitre, Solenn Berson
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Publication number: 20190019953Abstract: The invention concerns a solution of tungstate ions W6+ (VI) comprising as solvent at least one optionally partly etherified polyalcohol, a preparation method and uses thereof. The invention further concerns a layer comprising at least one tungsten oxide WOz comprising one or more polyoxotungstate complexes, methods for preparing the same and uses thereof, and in particular a photovoltaic device comprising said layer of material.Type: ApplicationFiled: January 12, 2017Publication date: January 17, 2019Inventors: Luc BROHAN, Mireille RICHARD-PLOUET, Moustafa EL KASS, Noëlla LEMAITRE, Solenn BERSON
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Patent number: 10174216Abstract: An ink that can form a P-type layer in an organic electronic device. The ink includes at least nanoparticles of P-type semiconductor metal oxide(s) selected from among V2O5, NiO, MoO3, WO3 and mixtures thereof and an ionomer, the ionomer being a perfluorosulfonate copolymer, the mass ratio between the ionomer and the nanoparticles of P-type semiconductor metal oxide(s) selected from among V2O5, NiO, MoO3, WO3 and mixtures thereof being between 0.005 and 0.115. Also, a P layer of an organic electronic device, an electronic device and the formation method thereof.Type: GrantFiled: November 25, 2014Date of Patent: January 8, 2019Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Matthieu Manceau, Solenn Berson
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Patent number: 9972801Abstract: An optoelectronic device having a layer comprising: poly(3,4-ethylenedioxythiophene); polystyrene sulfonate; and a compound (A) having formula: wherein 0<x/y<1, Ar1 and Ar2 represent aromatic rings, which may be identical or different, and at least one Ar1 and Ar2 comprises at least one hydrophobic substituent on its ring.Type: GrantFiled: December 20, 2016Date of Patent: May 15, 2018Assignee: Commissariat A L'Energie Atomique Et Aux Energies AlternativesInventors: Mathieu Senghor, Solenn Berson, Matthieu Manceau
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Patent number: 9882155Abstract: An organic electronic device having an architecture with an inverted structure, containing a substrate, a first electrode deposited on the substrate, a second electrode and at least one assembly including a multilayer stack disposed between the electrodes, the multilayer stack including the following, successively from the first electrode: an N-type layer; an electrically active layer; and a P-type layer comprising a mixture of poly(3,4-ethylenedioxythiophene):poly (styrene-sulfonate), the stack containing an additional layer, known as the adhesion layer, formed by at least one metallic oxide and inserted between, and in contact with, the active layer and the P-layer. Also, a method for producing such a device.Type: GrantFiled: November 25, 2014Date of Patent: January 30, 2018Assignee: Commissariat A L'Energie Atomique Et Aux Energies AlternativesInventors: Matthieu Manceau, Solenn Berson
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Publication number: 20170207405Abstract: The present disclosure relates to a multi-layer stack which is useful for forming a multi-junction organic photovoltaic cell, said stack including first and second active layers, and an intermediate p-type or n-type layer, inserted between said first and second active layers and in contact with at least one of the first and second active layers, said intermediate layer including a network of electrically conductive nanowires, said stack including an additional layer, inserted between the first active layer and the second active layer and directly in contact with the first active layer or the second active layer, the additional layer being P-type or N-type, separate from the one forming the intermediate layer.Type: ApplicationFiled: June 23, 2015Publication date: July 20, 2017Applicants: COMM. A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALT., UNIV DE CHAMBERY - UNIVERSITE SAVOIE MONT BLANCInventors: Tristan LESCOUET, Solenn BERSON, Caroline CELLE, Pierre-Balthazar LECHENE, Jean-Pierre SIMONATO
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Publication number: 20170194567Abstract: An organic electronic device containing a stack successively including a polymer substrate covered with a first layer E1 made of conductive or semiconductor material; a hole transport layer HTL; an active layer A; and a second layer E2 made of conductive or semiconductor material. The HTL layer is a bilayer formed of a so-called neutral layer based on PEDOT:PSS and of a so-called acid layer based on PEDOT:PSS. The neutral layer is in contact with first layer E1 while the acid layer is in contact with active layer A.Type: ApplicationFiled: May 29, 2015Publication date: July 6, 2017Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Solenn Berson, Stéphane Cros, Stéphane Guillerez, Noëlla Lemaitre
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Publication number: 20170137645Abstract: An ink that can form a P-type layer in an organic electronic device. The ink includes at least nanoparticles of P-type semiconductor metal oxide(s) selected from among V2O5, NiO, MoO3, WO3 and mixtures thereof and an ionomer, the ionomer being a perfluorosulfonate copolymer, the mass ratio between the ionomer and the nanoparticles of P-type semiconductor metal oxide(s) selected from among V2O5, NiO, MoO3, WO3 and mixtures thereof being between 0.005 and 0.115. Also, a P layer of an organic electronic device, an electronic device and the formation method thereof.Type: ApplicationFiled: November 25, 2014Publication date: May 18, 2017Inventors: Matthieu Manceau, Solenn Berson
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Publication number: 20170104170Abstract: An optoelectronic device having a layer comprising: poly(3,4-ethylenedioxythiophene); polystyrene sulfonate; and a compound (A) having formula: wherein 0<x/y<1, Ar1 and Ar2 represent aromatic rings, which may be identical or different, and at least one Ar1 and Ar2 comprises at least one hydrophobic substituent on its ring.Type: ApplicationFiled: December 20, 2016Publication date: April 13, 2017Applicant: Commissariat A L'Energie Atomique Et Aux Energies AlternativesInventors: Mathieu SENGHOR, Solenn BERSON, Matthieu MANCEAU
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Patent number: 9559304Abstract: This forming involves a composition including: poly(3,4-ethylenedioxythiophene) or PEDOT; polystyrene sulfonate or PSS; a compound (A) having formula: with 0<x/y<1; Ar1 and Ar2 representing two aromatic rings, which may be identical or different; Ar1 and/or Ar2 comprising at least one hydrophobic substituent on its ring.Type: GrantFiled: December 16, 2013Date of Patent: January 31, 2017Assignee: Commissariat A L'Energie Atomique Et Aux Energies AlternativesInventors: Mathieu Senghor, Solenn Berson, Matthieu Manceau
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Publication number: 20160365526Abstract: An organic electronic device having an architecture with an inverted structure, containing a substrate, a first electrode deposited on the substrate, a second electrode and at least one assembly including a multilayer stack disposed between the electrodes, the multilayer stack including the following, successively from the first electrode: an N-type layer; an electrically active layer; and a P-type layer comprising a mixture of poly(3,4-ethylenedioxythiophene):poly (styrene-sulfonate), the stack containing an additional layer, known as the adhesion layer, formed by at least one metallic oxide and inserted between, and in contact with, the active layer and the P-layer. Also, a method for producing such a device.Type: ApplicationFiled: November 25, 2014Publication date: December 15, 2016Applicant: Commissariat A L'Energie Atomique Et Aux Energies AlternativesInventors: Matthieu Manceau, Solenn Berson
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Patent number: 9425344Abstract: The invention relates to a method for preparing a colloidal nanoparticle solution, including: (a) dissolving a titanium-oxide precursor, referred to as a precursor, in one or more solvents, referred to as precursor solvents; and (b) chemically converting, preferably by means of hydrolysis, said titanium-oxide precursor and said precursor solvent into a colloidal-solution solvent so as to form titanium-oxide nanoparticles that are dispersed in the colloidal-solution solvent, said colloidal solution having a dynamic viscosity of between 4 and 54 cP at 20° C. and 101,325 Pa. The invention also relates to a colloidal titanium-oxide nanoparticle solution containing a dispersion of titanium-oxide nanoparticles in a solvent or system of solvents, the viscosity of which is between 4 and 54 cP, said solution being particularly obtainable according to the method of the invention, as well as to the uses thereof, in particular for preparing photovoltaic cells.Type: GrantFiled: September 12, 2012Date of Patent: August 23, 2016Assignees: Centre National De La Recherche Scientifique (C.N.R.S.), Université De Nantes, Commissariat a l'énergie atomique et aux énergies alternativesInventors: Luc René Roger Brohan, Arkadiusz Michal Karpinski, Mireille Richard-Plouet, Solenn Berson, Stéphane Guillerez, Mickaël Barret, Jérôme Mourao
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Patent number: 9396970Abstract: A method for forming, on a conductive or semiconductor substrate, nanowires based on CuSCN, including the steps of: preparing an aqueous electrolytic solution from a Cu(II) salt having a concentration lower than 120 mM, a Cu(II) complexing agent from the aminocarboxylic acid family, and a thiocyanate salt, the solution having a pH ranging between 0.1 and 3; electrochemically depositing the aqueous electrolytic solution on the substrate.Type: GrantFiled: June 13, 2013Date of Patent: July 19, 2016Assignee: Commissariat A L'Energie Atomique Et Aux Energies AlternativesInventors: Cyril Chappaz Gillot, Solenn Berson, Valentina Ivanova, Raul Salazar Romero
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Publication number: 20150024539Abstract: The invention relates to a method for preparing a colloidal nanoparticle solution, including: (a) dissolving a titanium-oxide precursor, referred to as a precursor, in one or more solvents, referred to as precursor solvents; and (b) chemically converting, preferably by means of hydrolysis, said titanium-oxide precursor and said precursor solvent into a colloidal-solution solvent so as to form titanium-oxide nanoparticles that are dispersed in the colloidal-solution solvent, said colloidal solution having a dynamic viscosity of between 4 and 54 cP at 20° C. and 101,325 Pa. The invention also relates to a colloidal titanium-oxide nanoparticle solution containing a dispersion of titanium-oxide nanoparticles in a solvent or system of solvents, the viscosity of which is between 4 and 54 cP, said solution being particularly obtainable according to the method of the invention, as well as to the uses thereof, in particular for preparing photovoltaic cells.Type: ApplicationFiled: September 12, 2012Publication date: January 22, 2015Applicants: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S), UNIVERSITE DE NANTES, Commissariat à l'énergie atomique et aux énergies alternatives, ARDEJEInventors: Luc René Roger Brohan, Arkadiusz Michal Karpinski, Mireille Richard-Plouet, Solenn Berson, Stéphane Guillerez, Mickaël Barret, Jérôme Mourao
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Publication number: 20140209157Abstract: This forming involves a composition including: poly(3,4-ethylenedioxythiophene) or PEDOT; polystyrene sulfonate or PSS; a compound (A) having formula: with 0<x/y<1; Ar1 and Ar2 representing two aromatic rings, which may be identical or different; Ar1 and/or Ar2 comprising at least one hydrophobic substituent on its ring.Type: ApplicationFiled: December 16, 2013Publication date: July 31, 2014Applicant: Commissariat A L'Energie Atomique Et Aux Energies AlternativesInventors: Mathieu SENGHOR, Solenn BERSON, Matthieu MANCEAU
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Publication number: 20140060644Abstract: The invention relates to a method for forming, on a conductive plastic substrate, a 2D crystalline layer based on zinc oxide, possibly doped, characterized in that: the 2D layer is formed by electrochemical deposition; the electrochemical deposition is performed at a temperature ranging between 55° C. and 65° C.; the electrochemical deposition is performed in the presence of oxygen, by means of a solution including a zinc source at a concentration ranging between 2.5 mM and 7 mM; and a supporting electrolyte at a concentration ranging between 0.06 M et 0.4 M.Type: ApplicationFiled: September 30, 2013Publication date: March 6, 2014Applicant: Commissariat A L'Energie Atomique Et Aux Energies AlternativesInventors: Solenn BERSON, Stéphane GUILLEREZ, Valentina IVANOVA-HRISTOVA, Sylvia SANCHEZ
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Publication number: 20130334054Abstract: A method for forming, on a conductive or semiconductor substrate, nanowires based on CuSCN, including the steps of: preparing an aqueous electrolytic solution from a Cu(II) salt having a concentration lower than 120 mM, a Cu(II) complexing agent from the aminocarboxylic acid family, and a thiocyanate salt, the solution having a pH ranging between 0.1 and 3; electrochemically depositing the aqueous electrolytic solution on the substrate.Type: ApplicationFiled: June 13, 2013Publication date: December 19, 2013Inventors: Cyril CHAPPAZ GILLOT, Solenn BERSON, Valentina IVANOVA, Raul SALAZAR ROMERO
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Publication number: 20130025685Abstract: The electrically active layer of an organic heterojunction solar cell is associated with an additional layer, so as to promote the vertical segregation between the p-type organic semiconductor material and the n-type carbonaceous semiconductor material that are present in the electrically active layer. The additional layer is in direct contact with the electrically active layer. Said additional layer comprises a compound forming noncovalent interactions with the n-type semiconductor carbonaceous material. In particular, said compound can be P4VP when the electrically active layer is formed of a mixture of P3HT:PCBM. Moreover, said additional layer comprises a n-type semiconductor material.Type: ApplicationFiled: April 20, 2011Publication date: January 31, 2013Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Solenn Berson, Severine Bailly, Stephane Guillerez, Noella Lemaitre
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Patent number: 8003881Abstract: A method of preparing a polymeric composition with photovoltaic properties comprises a step of blending, in a solvent, at least one electron donor type semiconductor polymeric material essentially in the form of nanofibrils and at least one electron acceptor type material in the solvent, said nanofibrils representing at least 10% by weight of the electron donor type semiconductor polymeric material, to polymeric compositions with photovoltaic properties, and to photovoltaic cells incorporating such polymeric compositions.Type: GrantFiled: October 20, 2006Date of Patent: August 23, 2011Assignee: Commissariat a l'Energie AtomiqueInventors: Solenn Berson, Remi De Bettignies, Muriel Firon, Stephane Guillerez
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Publication number: 20090120491Abstract: A method of preparing a polymeric composition with photovoltaic properties comprises a step of blending, in a solvent, at least one electron donor type semiconductor polymeric material essentially in the form of nanofibrils and at least one electron acceptor type material in the solvent, said nanofibrils representing at least 10% by weight of the electron donor type semiconductor polymeric material, to polymeric compositions with photovoltaic properties, and to photovoltaic cells incorporating such polymeric compositions.Type: ApplicationFiled: October 20, 2006Publication date: May 14, 2009Applicant: Commissariat a l'Energie AtomiqueInventors: Solenn Berson, Remi De Bettignies, Muriel Firon, Stephane Guillerez