Abstract: A method may include depositing a mask layer on a substrate using physical vapor deposition, wherein an absolute value of a stress in the mask layer has a first value; and directing a dose of ions into the mask layer, wherein the absolute value of the stress in the mask layer has a second value, less than the first value, after the directing the dose.

Abstract: A method may include depositing a mask layer on a substrate using physical vapor deposition, wherein an absolute value of a stress in the mask layer has a first value; and directing a dose of ions into the mask layer, wherein the absolute value of the stress in the mask layer has a second value, less than the first value, after the directing the dose.

Abstract: As etching processes become more aggressive, increased etch resistivity of the hard mask is desirable. Methods of modulating the etch rate of the mask and optionally the underlying material are disclosed. An etch rate modifying species is implanted into the hard mask after the mask etching process is completed. This etch rate modifying species increases the difference between the etch rate of the mask and the etch rate of the underlying material to help preserve the integrity of the mask during a subsequent etching process. In some embodiments, the etch rate of the mask is decreased by the etch rate modifying species. In certain embodiments, the etch rate of the underlying material is increased by the etch rate modifying species.

Abstract: As etching processes become more aggressive, increased etch resistivity of the hard mask is desirable. Methods of modulating the etch rate of the mask and optionally the underlying material are disclosed. An etch rate modifying species is implanted into the hard mask after the mask etching process is completed. This etch rate modifying species increases the difference between the etch rate of the mask and the etch rate of the underlying material to help preserve the integrity of the mask during a subsequent etching process. In some embodiments, the etch rate of the mask is decreased by the etch rate modifying species. In certain embodiments, the etch rate of the underlying material is increased by the etch rate modifying species.

Abstract: As etching processes become more aggressive, increased etch resistivity of the hard mask is desirable. Methods of modulating the etch rate of the mask and optionally the underlying material are disclosed. An etch rate modifying species is implanted into the hard mask after the mask etching process is completed. This etch rate modifying species increases the difference between the etch rate of the mask and the etch rate of the underlying material to help preserve the integrity of the mask during a subsequent etching process. In some embodiments, the etch rate of the mask is decreased by the etch rate modifying species. In certain embodiments, the etch rate of the underlying material is increased by the etch rate modifying species.

Abstract: As etching processes become more aggressive, increased etch resistivity of the hard mask is desirable. Methods of modulating the etch rate of the mask and optionally the underlying material are disclosed. An etch rate modifying species is implanted into the hard mask after the mask etching process is completed. This etch rate modifying species increases the difference between the etch rate of the mask and the etch rate of the underlying material to help preserve the integrity of the mask during a subsequent etching process. In some embodiments, the etch rate of the mask is decreased by the etch rate modifying species. In certain embodiments, the etch rate of the underlying material is increased by the etch rate modifying species.

Abstract: A method for depositing an adhesion layer in a contact region on a semiconductor substrate provides for sufficient coverage on the bottom and sidewalls of the contact region. In an example embodiment, a contact region having a bottom and sidewalls has a first coat of the adhesion layer deposited thereon at a thickness greater than the thickness on the sidewall. To compensate for the narrower adhesion layer thickness on the sidewalls, a second coat of the adhesion layer is deposited so that the second coat on the sidewalls is at a thickness greater than the second coat thickness on the bottom. The adhesion layer is titanium nitride although other materials may be used as well.

Abstract: A method for depositing an adhesion layer in a contact region on a semiconductor substrate provides for sufficient coverage on the bottom and sidewalls of the contact region. In an example embodiment, a contact region having a bottom and sidewalls has a first coat of the adhesion layer deposited thereon at a thickness greater than the thickness on the sidewall. To compensate for the narrower adhesion layer thickness on the sidewalls, a second coat of the adhesion layer is deposited so that the second coat on the sidewalls is at a thickness greater than the second coat thickness on the bottom. The adhesion layer is titanium nitride although other materials may be used as well.

Abstract: The invention relates to ZrB.sub.2 /Cu composites, and more specifically to methods of making ZrB.sub.2 /Cu composite electrodes and methods of using ZrB.sub.2 /Cu composite electrodes. ZrB.sub.2 powder is contacted with a polymer and shaped to a desired form. The polymer is vaporized and the ZrB/.sub.2 powder is sintered. The sintered ZrB.sub.2 is contacted with Cu and heated above the melting point of Cu which causes the Cu to infiltrate the ZrB.sub.2, forming the ZrB.sub.2 /Cu composite electrode.

Abstract: The invention relates to ZrB.sub.2 /Cu composites, and more specifically to methods of making ZrB.sub.2 /Cu composite electrodes and methods of using ZrB.sub.2 /Cu composite electrodes. ZrB.sub.2 powder is contacted with a polymer and shaped to a desired form. The polymer is vaporized and the ZrB.sub.2 powder is sintered. The sintered ZrB.sub.2 is contacted with Cu and heated above the melting point of Cu which causes the Cu to infiltrate the ZrB.sub.2, forming the ZrB.sub.2 /Cu composite electrode.