Abstract: A palladium coated copper wire for ball bonding includes a core formed of pure copper or copper alloy having a purity of 98% by mass or more, and a palladium draw coated layer coated on the core. The copper wire has a diameter of 10 to 25 ?m, and the palladium drawn layer contains sulfur, phosphorus, boron or carbon.

Abstract: A noble metal-coated copper wire for ball bonding, with a wire diameter between 10 ?m or more, and 25 ?m or less, includes a core material having a copper alloy having a copper purity of 98 mass % or higher, and a noble metal-coating layer formed on the core material. The noble metal-coating layer includes a palladium cavitating layer containing palladium; at least one element selected from the group consisting of Group 13 to 16 elements or an oxygen element, finely dispersed in the palladium; and a diffusion layer formed of copper diffused into the palladium. The noble metal-coating layer may include a palladium cavitating layer containing palladium, at least one element selected from the group consisting of Group 13 to 16 elements or an oxygen element, finely dispersed therein, and a nickel intermediate layer disposed between the core material and the noble metal-coating layer.

Abstract: A palladium coated copper wire for ball bonding includes a core formed of pure copper or copper alloy having a purity of 98% by mass or more, and a palladium draw coated layer coated on the core. The copper wire has a diameter of 10 to 25 ?m, and the palladium drawn layer contains sulfur, phosphorus, boron or carbon.

Abstract: The present invention is directed to a precious metal sputtering target having a columnar crystallographic microstructure such that crystals are grown in a direction normal to the sputtering surface in order to solve conventional problems. The high-purity sputtering target of the present invention prevents chipping of a minute cluster mass that occurs in a sputtering target produced through casting or powder metallurgy; produces thin film of excellent quality; and has considerably reduced internal defects.

Abstract: The present invention is directed to a precious metal sputtering target having a columnar crystallographic microstructure such that crystals are grown in a direction normal to the sputtering surface in order to solve conventional problems. The high-purity sputtering target of the present invention prevents chipping of a minute cluster mass that occurs in a sputtering target produced through casting or powder metallurgy; produces thin film of excellent quality; and has considerably reduced internal defects.

Abstract: The present invention is directed to a precious metal sputtering target having a columnar crystallographic microstructure such that crystals are grown in a direction normal to the sputtering surface in order to solve conventional problems. The high-purity sputtering target of the present invention prevents chipping of a minute cluster mass that occurs in a sputtering target produced through casting or powder metallurgy; produces thin film of excellent quality; and has considerably reduced internal defects.

Abstract: The invention provides a method for producing a sputtering target material including electrolyzing a molten salt mixture containing a precious metal salt and a solvent salt, to thereby deposit a precious metal or a precious metal alloy. The method enables simplification of production steps and produces high-purity target materials. In addition, the electrodeposited precious metal or precious metal alloy is heat-treated at a temperature of at least 800° C. but lower than the melting point of the precious metal, to thereby produce a target material of higher purity.