Abstract: An approach to form a semiconductor structure with a plurality of buried power rails in a semiconductor substrate where at least one buried power rail extends below the backside of the semiconductor substrate. The semiconductor structure provides at least one portion of the first metal layer of the backside power delivery network that surrounds a bottom portion of the buried power rail below the backside of the semiconductor substrate. The bottom portion of the buried power rail is in direct contact with the portion of the first metal layer of the backside power delivery network where the buried power rail and the first metal layer are composed of the same conductive material. The semiconductor structure includes a portion of an interlayer dielectric material isolating the first metal layer of the backside power distribution network from the backside of the semiconductor substrate.

Abstract: A spatial hierarchical model provides spatial context to a plurality of building control assets disposed within a plurality of hierarchical levels of the spatial hierarchical model. A method includes identifying non-compliance events detected by building control assets disposed at and below a particular hierarchical level of the spatial hierarchical model. The non-compliance events detected by building control assets disposed at and below the particular hierarchical level of the spatial hierarchical model over a period of time are aggregated and a healthy building dashboard that includes a representation of the aggregated non-compliance events for each of at least some of the one or more of the healthy building criteria detected by building control assets disposed at and below the particular hierarchical level of the spatial hierarchical model is generated and is displayed on a display.

Abstract: A semiconductor device fabrication method is provided. The semiconductor device fabrication method includes frontside semiconductor device processing on a frontside of a wafer, flipping the wafer, backside semiconductor device processing on a backside of the wafer and backside and frontside contact formation processing on the backside and frontside of the wafer, respectively.

Abstract: A method of forming fully aligned top vias is provided. The method includes forming a fill layer on a conductive line, wherein the fill layer is adjacent to one or more vias. The method further includes forming a spacer layer selectively on the exposed surface of the fill layer, wherein the top surface of the one or more vias is exposed after forming the spacer layer. The method further includes depositing an etch-stop layer on the exposed surfaces of the spacer layer and the one or more vias, and forming a cover layer on the etch-stop layer.

Abstract: A first source drain region adjacent to a first transistor, a second source drain region adjacent to a second transistor, an upper source drain contact above the first source drain region, a bottom source drain contact below the second source drain region, the bottom and the upper source drain contacts are on opposite sides, a horizontal surface of the bottom source drain contact is adjacent to a horizontal surface of dielectric side spacers surrounding the second source drain region. An embodiment where a bottom source drain contact surrounds vertical sides of a source drain region. A method including forming a forming a first and a second nanosheet stacks, forming a top source drain contact to a first source drain region adjacent to the first nanosheet stack, forming a bottom source drain contact to a lower horizontal surface of a second source drain region adjacent to the second nanosheet stack.

Abstract: A first and a second source drain region, an upper source drain contact connected to the first source drain region, a bottom source drain contact connected to the second source drain region, a dielectric spacer surrounds opposite vertical side surfaces of the bottom source drain contact and overlaps a vertical side surface and a lower horizontal surface of a bottom isolation region. A width of the bottom source drain contact wider than a width of the second source drain. Forming an undoped silicon buffer epitaxy in an opening between and below a first and a second nanosheet stack, forming a contact to a first source drain adjacent to that, removing the undoped silicon buffer epitaxy below a second source drain between the first and the second nanosheet stack, forming a bottom contact to that, a width of the bottom contact is wider than a width of the second source drain.

Abstract: A semiconductor structure including a middle-of-line contact, a backside power rail, and a contact via extending between the middle-of-line contact and the backside power rail, wherein the contact via comprises a first portion having a negative tapered profile and a second portion having a positive tapered profile.

Abstract: A method can include obtaining characteristic data for a wafer. The characteristic data can correspond to the wafer in a processed state and can include a set of stress values of the wafer. The wafer can include a front side, a back side opposite the front side, and a set of regions. The set of stress values can include a first stress value corresponding to a first region. In the processed state, one or more front-side processes can be completed on the front side of the wafer. The method can include determining that the first stress value exceeds a stress threshold and generating a compensation map. The compensation map can identify one or more regions for forming one or more trenches. The method can include initiating, based on the compensation map, a formation of a first trench on the back side of the wafer in the first region.

Abstract: A semiconductor device fabrication method is provided. The semiconductor device fabrication method includes frontside semiconductor device processing on a frontside of a wafer, flipping the wafer, backside semiconductor device processing on a backside of the wafer and backside and frontside contact formation processing on the backside and frontside of the wafer, respectively.

Abstract: A spatial hierarchical model provides spatial context to a plurality of building control assets disposed within a plurality of hierarchical levels of the spatial hierarchical model. A method includes identifying non-compliance events detected by building control assets disposed at and below a particular hierarchical level of the spatial hierarchical model. The non-compliance events detected by building control assets disposed at and below the particular hierarchical level of the spatial hierarchical model over a period of time are aggregated and a healthy building dashboard that includes a representation of the aggregated non-compliance events for each of at least some of the one or more of the healthy building criteria detected by building control assets disposed at and below the particular hierarchical level of the spatial hierarchical model is generated and is displayed on a display.

Abstract: A semiconductor including a first sacrificial layer located directly between a first substrate layer and a second substrate layer, where the first sacrificial layer has a first thickness. The second substrate layer has a second thickness and where the second thickness is larger than the first thickness. A source/drain located on top of the second substrate layer and a dielectric landing pad located within the first sacrificial layer. A frontside contact comprised of a first section and a second section. The first section of the frontside contact is located on top of the source/drain. The second section of the frontside contact is a via that extends downwards past and through the dielectric landing pad.

Abstract: Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a substrate layer; and a buried power rail (BPR) embedded in the substrate layer, wherein the BPR is isolated from the substrate layer by an enlarged deep shallow-trench-isolation (STI) region. In one embodiment, the enlarged deep STI region has a first width at near a top thereof and a second width at near a middle portion thereof, with the second width being larger than the first width. A method of making the above semiconductor structure is also provided.

Abstract: A device comprises a first interconnect structure, a second interconnect structure, a first cell comprising a first transistor, a second cell comprising a second transistor, a first contact connecting a source/drain element of the first transistor to the first interconnect structure, and second contact connecting a source/drain element of the second transistor to the second interconnect structure. The first cell is disposed adjacent to the second cell with the first transistor disposed adjacent to the second transistor. The first and second cells are disposed between the first and second interconnect structures.

Abstract: A spatial hierarchical model provides spatial context to a plurality of building control assets disposed within a plurality of hierarchical levels of the spatial hierarchical model. A method includes identifying non-compliance events detected by building control assets disposed at and below a particular hierarchical level of the spatial hierarchical model. The non-compliance events detected by building control assets disposed at and below the particular hierarchical level of the spatial hierarchical model over a period of time are aggregated and a healthy building dashboard that includes a representation of the aggregated non-compliance events for each of at least some of the one or more of the healthy building criteria detected by building control assets disposed at and below the particular hierarchical level of the spatial hierarchical model is generated and is displayed on a display.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a plurality of metal lines on substrate, forming a sacrificial dielectric material layer between the metal lines, forming a hardmask over at least one of the metal lines, etching at least one of the metal lines that is not covered by the hardmask, treating the sacrificial dielectric material layer to soften the layer. The method also includes removing the treated sacrificial dielectric material layer.

Abstract: An interlayer interconnect for an integrated circuit includes a first line in a first wiring layer, a first via portion integral to and extending from the first line, and a second line in a second wiring layer that is adjacent to the first wiring layer. The interlayer interconnect also includes a third line in the second wiring layer that is a first distance from the second line, wherein the first distance is a pitch of the second wiring layer, and a second via portion integral to and extending from the second line and in electrical contact with the first via portion at an interface to form a via. The via extends a second distance that is at least one-and-a-quarter times the pitch.

Abstract: A semiconductor device includes a first buried power rail (BPR) disposed through etch stop layers and a second BPR disposed in direct contact with the first BPR, where the first BPR has a larger critical dimension (CD) than the second BPR. A bottom surface of the first BPR directly contacts a via-to buried power rail (VBPR) contact. Source/drain contacts (CA) are disposed adjacent the VBPR contact and source/drain regions collectively defining middle-of-line (MOL) components. Back-end-of-line (BEOL) components are then constructed adjacent to the MOL components, and the MOL and BEOL components bond to a carrier wafer. The second BPR is then constructed on the carrier wafer.

Abstract: A spatial hierarchical model is built by accepting user input to add and name each of one or more first level spaces at a first level of the spatial hierarchical model and to select a selected one of the first level spaces of the spatial hierarchical model and add and name each of one or more child level spaces that are spatially part of the selected first level space at a second level of the spatial hierarchical model. A graphical representation of one or more of the first level spaces and one or more corresponding child level spaces is displayed along with a listing of at least some of the plurality of building control assets. User input is accepted to assign selected building control assets from the listing of at least some of the plurality of building control assets to a selected child level space.

Abstract: Embodiments disclosed herein describe a semiconductor structure. The semiconductor structure may include a device region with a first source/drain (S/D) and a second S/D. The semiconductor structure may also include a buried power rail (BPR) under the device region. A critical dimension of the BPR may be larger than a distance between the first S/D and the second S/D. The semiconductor structure may also include a via-contact-to-buried power rail (VBPR) between the BPR and the S/D.

Abstract: Integrated chips and methods of forming the same include forming a stack of layers, including a device stack above a first sacrificial layer, above a substrate. The first sacrificial layer is replaced with a first etch stop layer. The substrate is removed, exposing a substrate-side of the stack of layers. The substrate-side of the stack of layers is etched to form a trench, stopping on the first etch stop layer. A conductive line is formed in the trench.