Abstract: An apparatus for securing a substrate in an electrochemical deposition system is provided. The apparatus generally includes a substrate support member adapted to receive the substrate and a thrust plate assembly adapted to exert a downward force on the substrate. For some embodiments, a first sealing member adapted to engage a plating surface of the substrate may be attached to the substrate support member. The apparatus may also include a second sealing member adapted to engage a non-plating surface of the substrate or a surface of the substrate support member to prevent the flow of plating fluid to a non-plating surface of the substrate. The apparatus may also include electrical contacts to electrically contact the plating or non-plating surface of the substrate.

Abstract: An apparatus for providing an electrical bias to a substrate in a processing system is described. The apparatus generally includes a conductive annular body defining a central opening. The conductive annular body may have a substrate seating surface adapted to receive the substrate and a plurality of scallops formed on a surface opposing the substrate seating surface. A plurality of electrical contacts may be formed on the substrate seating surface opposite the plurality of scallops. The electrical contacts may be adapted to engage a plating surface of the substrate.

Abstract: An apparatus for securing a substrate in an electrochemical deposition system is provided. The apparatus generally includes a substrate support member adapted to receive the substrate and a thrust plate assembly adapted to exert a downward force on the substrate. For some embodiments, a first sealing member adapted to engage a plating surface of the substrate may be attached to the substrate support member. The apparatus may also include a second sealing member adapted to engage a non-plating surface of the substrate or a surface of the substrate support member to prevent the flow of plating fluid to a non-plating surface of the substrate. The apparatus may also include electrical contacts to electrically contact the plating or non-plating surface of the substrate.

Abstract: An apparatus for providing an electrical bias to a substrate in a processing system is described. The apparatus generally includes a conductive annular body defining a central opening. The conductive annular body may have a substrate seating surface adapted to receive the substrate and a plurality of scallops formed on a surface opposing the substrate seating surface. A plurality of electrical contacts may be formed on the substrate seating surface opposite the plurality of scallops. The electrical contacts may be adapted to engage a plating surface of the substrate.

Abstract: Method and apparatus for electrodepositing a metal onto a substrate. An oxide treatment process is performed on a substrate prior to making electrical contact between a seed layer of the substrate and a conductive contact element which provides a current. In one embodiment, the pressure at the interface between the seed layer and the conductive contact element is controlled to avoid detrimentally affecting a material(s) of the substrate.

Abstract: An improved plasma applicator for remotely generating a plasma for use in semiconductor manufacturing is provided. In one embodiment, a plasma applicator is comprised of a chamber assembly, a removable waveguide adapter and a circular clamp which secures the adapter to the chamber assembly. The chamber assembly includes an aperture plate, a microwave transparent window, a chamber body and a microwave sensor which is mounted on the chamber body. The chamber body has a proximate end opening adapted to admit microwave energy into the cavity and a distal end disposed generally on the opposite side of the cavity from the proximate end opening. The chamber body further has a gas outlet port adapted to permit the flow of an excited gas out of the cavity and a gas inlet port adapted to admit a precursor gas into the cavity. The gas inlet port has a center axis which is disposed between the proximate end opening of the chamber body and the midpoint between the proximate end opening and the distal end of the body.

Abstract: A showerhead for distributing gases in a semiconductor process chamber. In one embodiment, a showerhead comprising a perforated center portion, a mounting portion circumscribing the perforated center portion and a plurality of bosses extending from the mounting portion each having a hole disposed therethrough is provided. Another embodiment of the invention provides a showerhead that includes a mounting portion having a first side circumscribing a perforated center portion. A ring extends from the first side of the mounting portion. A plurality of mounting holes are disposed in the mounting portion radially to either side of the ring. The showerhead provides controlled thermal transfer between the showerhead and chamber lid resulting in less deposition on the showerhead.