Patents by Inventor Son T. CHAU

Son T. CHAU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • USING ANAB TECHNOLOGY TO REMOVE PRODUCTION PROCESSING RESIDUALS FROM GRAPHENE
    Publication number: 20240018003
    Abstract: A method for removing contaminants from a graphene product uses an accelerated neutral atom beam to remove product contaminants without disruption of the product's crystalline lattice and morphology to enable usage in high purity devices/systems such as exemplified in semi-conductor and like high purity needs applications.
    Type: Application
    Filed: June 27, 2023
    Publication date: January 18, 2024
    Applicant: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Son T. Chau
  • FILM AND METHODS OF FORMING SAME
    Publication number: 20200387065
    Abstract: A film and method of forming a film provides an unmodified starting layer of a starting material, the starting layer having opposed first and second surfaces and an initial thickness, T1, and a modified surface layer of thickness T2, which is less than T1, formed in at least a portion of the second surface, wherein a portion of the modified surface layer is not supported by unmodified starting material removed from the first surface opposite the modified surface layer.
    Type: Application
    Filed: December 31, 2019
    Publication date: December 10, 2020
    Inventors: Sean R. Kirkpatrick, Son T. Chau
  • Enhanced high aspect ratio etch performance using accelerated neutral beams derived from gas-cluster ion beams
    Patent number: 10670960
    Abstract: A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening with high aspect ratio (into depth from opening to base or bottom divided by minimum space of the trench therebetween) by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: June 2, 2020
    Assignee: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Kiet A. Chau, Son T. Chau
  • Film and methods of forming same
    Patent number: 10539867
    Abstract: A film and method of forming a film provides an unmodified starting layer of a starting material, the starting layer having opposed first and second surfaces and an initial thickness, T1, and a modified surface layer of thickness T2 which is less than T1, formed in at least a portion of the second surface, wherein a portion of the modified surface layer is not supported by unmodified starting material removed from the first surface opposite the modified surface layer.
    Type: Grant
    Filed: May 21, 2014
    Date of Patent: January 21, 2020
    Assignee: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Son T. Chau
  • METHOD AND APPARATUS FOR DIRECTING A NEUTRAL BEAM
    Publication number: 20200022247
    Abstract: The present disclosure present and method and apparatus for controlling the direction of a Neutral Beam derived from a gas cluster ion beam.
    Type: Application
    Filed: September 19, 2019
    Publication date: January 16, 2020
    Inventors: Sean R. Kirkpatrick, Son T. Chau
  • ENHANCED HIGH ASPECT RATIO ETCH PERFORMANCE USING ACCELERATED NEUTRAL BEAMS DERIVED FROM GAS-CLUSTER ION BEAMS
    Publication number: 20180292745
    Abstract: A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening with high aspect ratio (into depth from opening to base or bottom divided by minimum space of the trench therebetween) by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.
    Type: Application
    Filed: June 14, 2018
    Publication date: October 11, 2018
    Applicant: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Kiet A. Chau, Son T. Chau
  • FILM AND METHODS OF FORMING SAME
    Publication number: 20160091787
    Abstract: A film and method of forming a film provides an unmodified starting layer of a starting material, the starting layer having opposed first and second surfaces and an initial thickness, T1, and a modified surface layer of thickness T2 which is less than T1, formed in at least a portion of the second surface, wherein a portion of the modified surface layer is not supported by unmodified starting material removed from the first surface opposite the modified surface layer.
    Type: Application
    Filed: May 21, 2014
    Publication date: March 31, 2016
    Inventors: Sean R. Kirkpatrick, Son T. Chau
  • METHOD AND APPARATUS FOR DIRECTING A NEUTRAL BEAM
    Publication number: 20150366044
    Abstract: An apparatus and method for producing a deflection of a Neutral Beam derived from a gas-cluster ion-beam deflects the gas-cluster ion-beam prior to dissociation of gas clusters and removal of tons.
    Type: Application
    Filed: February 4, 2014
    Publication date: December 17, 2015
    Inventors: Sean R. KIRKPATRICK, Son T. CHAU