Abstract: A silicon-on-insulator (SOI) electrostatic discharge (ESD) protection device that can protect very sensitive thin gate oxides by limiting the power dissipation during the ESD event, which is best achieved by reducing the voltage drop across the active (protection) device during an ESD event. In one embodiment, the invention provides very low triggering and holding voltages.

Abstract: The present invention provides a semiconductor fabrication process and cluster tool utilizing individual gas boxes for each of the processing chambers. These individual gas boxes provide an enclosure where groupings of related gas components may be positioned above and/or adjacent to the semiconductor processing chamber requiring those objects or components. The proximity of the individual gas boxes to the respective processing chambers facilitates the delivery of gases to the chamber as needed. Furthermore, the individual gas panels enable a modular design comprising a processing chamber and gas panel combination. This modular design allows individual chambers and their respective gas panels to be run through various pre-installation tests.

Abstract: A lid assembly for a process chamber. The lid assembly includes a hinge having a hinge mount affixed to the chamber and a hinge arm. A pin extends from the hinge mount through an elongated slot in the hinge arm allowing both rotational and longitudinal motion of the hinge arm relative to the hinge mount. A support frame attached to the hinge arm has two side arms that extend perpendicularly from the hinge arms toward the front of the chamber. The lid is pivotally connected to the side arms by a pivot connection aligned with the center of mass of the lid. A detent extends from the lid through a slot in the side arm at a position offset from the pivot connection. The detent and slot serve to limit the allowable rotation of the lid relative to the lid support frame. Thus, the lid is allowed to float over the opening of the chamber as the lid is closed so that the lid may be positioned in parallel alignment relative to the opening of the chamber before being secured to the chamber.

Abstract: The present invention provides a method and apparatus for improving thermal management of gas being delivered to a chemical vapor deposition chamber. Thermal management is accomplished using a heat transfer fluid in thermal communication with the deposition gas passageways delivering the gases to the chamber for deposition. The gas injection manifold includes gas passageways and coolant liquid passageways, wherein the gas passageways extend through a constant voltage gradient gas feedthrough and the coolant liquid passageways extend through a gas input manifold coupled to the inlet end of the constant voltage gradient gas feedthrough. This arrangement provides for increase coolant liquid flow and allows maintenance or disassembly of the constant voltage gradient gas feedthrough without breaking the seal on the coolant liquid system.