Patents by Inventor Son Van Nguyen
Son Van Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9607825Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.Type: GrantFiled: April 8, 2014Date of Patent: March 28, 2017Assignee: International Business Machines CorporationInventors: Donald Francis Canaperi, Alfred Grill, Sanjay C. Mehta, Son Van Nguyen, Deepika Priyadarshini, Hosadurga Shobha, Matthew T. Shoudy
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Patent number: 9558934Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.Type: GrantFiled: October 28, 2015Date of Patent: January 31, 2017Assignee: International Business Machines CorporationInventors: Donald Francis Canaperi, Alfred Grill, Sanjay C. Mehta, Son Van Nguyen, Deepika Priyadarshini, Hosadurga Shobha, Matthew T. Shoudy
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Patent number: 9558935Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.Type: GrantFiled: October 29, 2015Date of Patent: January 31, 2017Assignee: International Business Machines CorporationInventors: Donald Francis Canaperi, Alfred Grill, Sanjay C. Mehta, Son Van Nguyen, Deepika Priyadarshini, Hosadurga Shobha, Matthew T. Shoudy
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Patent number: 9536733Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.Type: GrantFiled: October 29, 2015Date of Patent: January 3, 2017Assignee: International Business Machines CorporationInventors: Donald Francis Canaperi, Alfred Grill, Sanjay C. Mehta, Son Van Nguyen, Deepika Priyadarshini, Hosadurga Shobha, Matthew T. Shoudy
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Patent number: 9502288Abstract: An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal.Type: GrantFiled: March 15, 2012Date of Patent: November 22, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Son Van Nguyen, Alfred Grill, Thomas J. Haigh, Jr., Hosadurga Shobha, Tuan A. Vo
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Patent number: 9449812Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.Type: GrantFiled: November 2, 2015Date of Patent: September 20, 2016Assignee: International Business Machines CorporationInventors: Donald Francis Canaperi, Alfred Grill, Sanjay C. Mehta, Son Van Nguyen, Deepika Priyadarshini, Hosadurga Shobha, Matthew T. Shoudy
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Publication number: 20160064509Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.Type: ApplicationFiled: October 29, 2015Publication date: March 3, 2016Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Donald Francis Canaperi, Alfred Grill, Sanjay C. Mehta, Son Van Nguyen, Deepika Priyadarshini, Hosadurga Shobha, Matthew T. Shoudy
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Publication number: 20160064218Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.Type: ApplicationFiled: October 28, 2015Publication date: March 3, 2016Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Donald Francis Canaperi, Alfred Grill, Sanjay Mehta, Son Van Nguyen, Deepika Priyadarshini, Hosadurga Shobha, Matthew T. Shoudy
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Publication number: 20160056111Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.Type: ApplicationFiled: November 2, 2015Publication date: February 25, 2016Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Donald Francis Canaperi, Alfred Grill, Sanjay C. Mehta, Son Van Nguyen, Deepika Priyadarshini, Hosadurga Shobha, Matthew T. Shoudy
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Publication number: 20160047038Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.Type: ApplicationFiled: October 29, 2015Publication date: February 18, 2016Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Donald Francis Canaperi, Alfred Grill, Sanjay C. Mehta, Son Van Nguyen, Deepika Priyadarshini, Hosadurga Shobha, Matthew T. Shoudy
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Publication number: 20150287593Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.Type: ApplicationFiled: April 8, 2014Publication date: October 8, 2015Applicant: International Business Machines CorporationInventors: Donald Francis Canaperi, Alfred Grill, Sanjay C. Mehta, Son Van Nguyen, Deepika Priyadarshini, Hosadurga Shobha, Matthew T. Shoudy
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Publication number: 20150097274Abstract: An improved through-silicon via (TSV) is disclosed. A semiconductor substrate has a a back-end-of-line (BEOL) stack formed thereon. The BEOL stack and semiconductor substrate has a TSV cavity formed thereon. A conformal protective layer is disposed on the interior surface of the TSV cavity, along the BEOL stack and partway into the semiconductor substrate. The conformal protective layer serves to protect the dielectric layers within the BEOL stack during subsequent processing, improving the integrated circuit quality and product yield.Type: ApplicationFiled: December 16, 2014Publication date: April 9, 2015Applicant: International Business Machines CorporationInventors: Christopher Collins, Mukta G. Farooq, Troy Lawrence Graves-Abe, Tze-Man Ko, William Francis Landers, Youbo Lin, Son Van Nguyen, Jennifer Ann Oakley, Deepika Priyadarshini
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Publication number: 20150069608Abstract: An improved through-silicon via (TSV) and method of fabrication are disclosed. A back-end-of-line (BEOL) stack is formed on a semiconductor substrate. A TSV cavity is formed in the BEOL stack and semiconductor substrate. A conformal protective layer is disposed on the interior surface of the TSV cavity, along the BEOL stack and partway into the semiconductor substrate. The conformal protective layer serves to protect the dielectric layers within the BEOL stack during subsequent processing, improving the integrated circuit quality and product yield.Type: ApplicationFiled: September 11, 2013Publication date: March 12, 2015Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Christopher Collins, Troy Lawrence Graves-Abe, Mukta G. Farooq, Tze-man Ko, William Francis Landers, Youbo Lin, Son Van Nguyen, Jennifer Ann Oakley, Deepika Priyadarshini
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Publication number: 20140203336Abstract: A dielectric material incorporating a graded carbon adhesion layer whereby the content of C increases with layer thickness and a multiphase ultra low k dielectric comprising a porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than 7 GPa is described. A semiconductor integrated circuit incorporating the above dielectric material in interconnect wiring is described and a semiconductor integrated circuit incorporating the above multiphase ultra low k dielectric in a gate stack spacer of a FET is described.Type: ApplicationFiled: January 27, 2014Publication date: July 24, 2014Applicant: International Business Machines CorporationInventors: ALFRED GRILL, THOMAS JASPER HAIGH, KELLY MALONE, SON VAN NGUYEN, VISHNUBHAI VITTHALBHAI PATEL, HOSADURGA SHOBHA
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Patent number: 8779600Abstract: A dielectric stack and method of depositing the stack to a substrate using a single step deposition process. The dielectric stack includes a dense layer and a porous layer of the same elemental compound with different compositional atomic percentage, density, and porosity. The stack enhances mechanical modulus strength and enhances oxidation and copper diffusion barrier properties. The dielectric stack has inorganic or hybrid inorganic-organic random three-dimensional covalent bonding throughout the network, which contain different regions of different chemical compositions such as a cap component adjacent to a low-k component of the same type of material but with higher porosity.Type: GrantFiled: January 5, 2012Date of Patent: July 15, 2014Assignee: International Business Machines CorporationInventors: Son Van Nguyen, Griselda Bonilla, Alfred Grill, Thomas J. Haigh, Jr., Satyanarayana V. Nitta
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Patent number: 8652950Abstract: A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.Type: GrantFiled: February 25, 2013Date of Patent: February 18, 2014Assignee: International Business Machines CorporationInventors: Son Van Nguyen, Alfred Grill, Thomas J. Haigh, Jr., Sanjay Mehta
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Patent number: 8637412Abstract: A first PECVD process incorporating a silicon oxide precursor alone and then with an organo-silicon precursor with increasing flow while the flow of the silicon oxide precursor is reduced to zero provides a graded carbon adhesion layer whereby the content of C increases with layer thickness and a second PECVD process incorporating an organo-silicon precursor including an organic porogen provides a multiphase ultra-low k dielectric. The multiphase ultra-low k PECVD process uses high frequency radio frequency power just above plasma initiation in a PECVD chamber. An energy post treatment is also provided. A porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than 7 GPa is formed.Type: GrantFiled: August 19, 2011Date of Patent: January 28, 2014Assignee: International Business Machines CorporationInventors: Alfred Grill, Thomas Jasper Haigh, Jr., Kelly Malone, Son Van Nguyen, Vishnubhai Vitthalbhai Patel, Hosadurga Shobha
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Patent number: 8569166Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.Type: GrantFiled: June 3, 2011Date of Patent: October 29, 2013Assignee: Applied Materials, Inc.Inventors: Francimar Campana Schmitt, Li-Qun Xia, Son Van Nguyen, Shankar Venkataraman
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Publication number: 20130175697Abstract: A dielectric stack and method of depositing the stack to a substrate using a single step deposition process. The dielectric stack includes a dense layer and a porous layer of the same elemental compound with different compositional atomic percentage, density, and porosity. The stack enhances mechanical modulus strength and enhances oxidation and copper diffusion barrier properties. The dielectric stack has inorganic or hybrid inorganic-organic random three-dimensional covalent bonding throughout the network, which contain different regions of different chemical compositions such as a cap component adjacent to a low-k component of the same type of material but with higher porosity.Type: ApplicationFiled: January 5, 2012Publication date: July 11, 2013Applicant: International Business Machines CorporationInventors: Son Van Nguyen, Griselda Bonilla, Alfred Grill, Thomas J. Haigh, JR., Satyanarayana V. Nitta
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Patent number: 8476743Abstract: A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.Type: GrantFiled: September 9, 2011Date of Patent: July 2, 2013Assignee: International Business Machines CorporationInventors: Son Van Nguyen, Alfred Grill, Thomas J. Haigh, Jr., Sanjay Mehta