Abstract: Embodiments described herein generally relate to a substrate processing system and related methods, such as an etching/deposition method. The method comprises (A) depositing a protective layer on a first layer disposed on a substrate in an etch reactor, wherein a plasma source power of 4,500 Watts or greater is applied while depositing the protective layer, (B) etching the protective layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the protective layer, and (C) etching the first layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the first layer, wherein a time for the depositing a protective layer (A) comprises less than 30% of a total cycle time for the depositing a protective layer (A), the etching the protective layer (B), and the etching the first layer (C).

Abstract: The present disclosure provides methods for via reveal etching process to form through-silicon vias (TSVs) in a substrate. In one embodiment, a method for performing a via reveal process to form through-silicon vias in a substrate includes providing a substrate having partial through-silicon vias formed from a first surface of the substrate into a processing chamber, wherein the partial through-silicon vias formed in the substrate are blind vias, supplying an etching gas mixture including at least a fluorine containing gas and a chlorine containing gas into the processing chamber, and preferentially removing a portion of the substrate from a second surface of the substrate to expose the through-silicon vias until a desired length of the through-silicon vias is exposed from the second surface of the substrate.

Abstract: Embodiments described herein generally relate to a substrate processing system and related methods, such as an etching/deposition method. The method comprises (A) depositing a protective layer on a first layer disposed on a substrate in an etch reactor, wherein a plasma source power of 4,500 Watts or greater is applied while depositing the protective layer, (B) etching the protective layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the protective layer, and (C) etching the first layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the first layer, wherein a time for the depositing a protective layer (A) comprises less than 30% of a total cycle time for the depositing a protective layer (A), the etching the protective layer (B), and the etching the first layer (C).