Abstract: Data storage cells of a static random access memory array are selectively provided with back-bias voltages to reduce current leakage during an active mode of operation. Circuitry electrically connected with the array receives control signals and provides the back-bias voltages to certain idle data storage cells of the array based on the control signals.

Abstract: A compare circuit for a content-addressable memory within a computer system is disclosed. In accordance with a preferred embodiment of the present invention, a compare circuit for a content-addressable memory comprises a pair of storage node lines, a pair of compare lines, and two sets of transistors. The pair of storage node lines are complementary to each other and are connected to a memory cell of the content-addressable memory for determining a state of the memory cell. In a like manner, the pair of compare lines are also complementary to each other. The first set of transistors are four transistors connected in series to be enabled by a logical one from one of the storage node lines for allowing a signal from one of the compare lines to propagate to an output. The second set of transistors are also four transistors connected in series to be enabled by a logical zero from the same storage node line for allowing a signal from the other compare line to propagate to the output.