Patents by Inventor Song-E KIM

Song-E KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 10186615
    Abstract: A semiconductor device is provided which includes a first fin-type pattern including a first side surface and a second side surface opposite to each other, a first trench of a first depth adjacent to the first side surface, a second trench of a second depth adjacent to the second side surface. The second depth differs from the first depth, and a first field insulating film partially fills the first trench and a second field insulating film partially fills the second trench. The first fin-type pattern has a lower portion, and an upper portion having a narrower width than the lower portion, and has a first stepped portion on a boundary between the upper portion and the lower portion. The first field insulating film includes a first lower field insulating film in contact with the lower portion, and a first upper field insulating film in contact with the upper portion.
    Type: Grant
    Filed: February 6, 2018
    Date of Patent: January 22, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-Soo Kim, Gi-Gwan Park, Song-E Kim, Koung-Min Ryu, Sun-Ki Min
  • Semiconductor device
    Patent number: 10109738
    Abstract: A semiconductor device is provided that includes a deep trench defining an active region, and a fin-type pattern protruding within the active region. The fin-type pattern having a lower portion, an upper portion of a narrower width than the lower portion, and a first stepped portion formed at a boundary between the upper portion and the lower portion. The device also includes a first field insulating film surrounding the lower portion and a second field insulating film formed on the first field insulating film and partially surrounding the upper portion.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: October 23, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-soo Kim, Song-E Kim, Koung-Min Ryu, Sun-Ki Min
  • SEMICONDUCTOR DEVICE
    Publication number: 20180190821
    Abstract: A semiconductor device is provided which includes a first fin-type pattern including a first side surface and a second side surface opposite to each other, a first trench of a first depth adjacent to the first side surface, a second trench of a second depth adjacent to the second side surface. The second depth differs from the first depth, and a first field insulating film partially fills the first trench and a second field insulating film partially fills the second trench. The first fin-type pattern has a lower portion, and an upper portion having a narrower width than the lower portion, and has a first stepped portion on a boundary between the upper portion and the lower portion. The first field insulating film includes a first lower field insulating film in contact with the lower portion, and a first upper field insulating film in contact with the upper portion.
    Type: Application
    Filed: February 6, 2018
    Publication date: July 5, 2018
    Inventors: Sung-Soo KIM, Gi-Gwan PARK, Song-E KIM, Koung-Min RYU, Sun-Ki MIN
  • SEMICONDUCTOR DEVICE
    Publication number: 20180102429
    Abstract: A semiconductor device is provided that includes a deep trench defining an active region, and a fin-type pattern protruding within the active region. The fin-type pattern having a lower portion, an upper portion of a narrower width than the lower portion, and a first stepped portion formed at a boundary between the upper portion and the lower portion. The device also includes a first field insulating film surrounding the lower portion and a second field insulating film formed on the first field insulating film and partially surrounding the upper portion.
    Type: Application
    Filed: November 14, 2017
    Publication date: April 12, 2018
    Inventors: Sung-soo KIM, Song-E KIM, Koung-Min RYU, Sun-Ki Min
  • Semiconductor device
    Patent number: 9847421
    Abstract: A semiconductor device is provided that includes a deep trench defining an active region, and a fin-type pattern protruding within the active region. The fin-type pattern having a lower portion, an upper portion of a narrower width than the lower portion, and a first stepped portion formed at a boundary between the upper portion and the lower portion. The device also includes a first field insulating film surrounding the lower portion and a second field insulating film formed on the first field insulating film and partially surrounding the upper portion.
    Type: Grant
    Filed: June 22, 2016
    Date of Patent: December 19, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-soo Kim, Song-E Kim, Koung-Min Ryu, Sun-Ki Min
  • SEMICONDUCTOR DEVICE
    Publication number: 20170125597
    Abstract: A semiconductor device is provided which includes a first fin-type pattern including a first side surface and a second side surface opposite to each other, a first trench of a first depth adjacent to the first side surface, a second trench of a second depth adjacent to the second side surface. The second depth differs from the first depth, and a first field insulating film partially fills the first trench and a second field insulating film partially fills the second trench. The first fin-type pattern has a lower portion, and an upper portion having a narrower width than the lower portion, and has a first stepped portion on a boundary between the upper portion and the lower portion. The first field insulating film includes a first lower field insulating film in contact with the lower portion, and a first upper field insulating film in contact with the upper portion.
    Type: Application
    Filed: October 17, 2016
    Publication date: May 4, 2017
    Inventors: Sung-Soo KIM, Gi-Gwan PARK, Song-E KIM, Koung-Min RYU, Sun-Ki MIN