Abstract: A method of operating a universal flash storage (UFS) device communicating with a UFS host via a link is provided. The method determines in the UFS device whether a warm reset of the link is necessary while the UFS device is communicating with the UFS host via the link. Upon determining that the warm reset of the link is necessary, the UFS device initiates the warm reset of the link.

Abstract: A method of operating a universal flash storage (UFS) device communicating with a UFS host via a link is provided. The method determines in the UFS device whether a warm reset of the link is necessary while the UFS device is communicating with the UFS host via the link. Upon determining that the warm reset of the link is necessary, the UFS device initiates the warm reset of the link.

Abstract: A method of operating an eMMC system includes receiving a first command defining a first operation from the host, and storing the first command in a first command register among N command registers, and receiving a second command defining a second operation from the host, and storing the second command in a second command register among the N command registers, wherein the second command is received while the first operation is being performed.

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

Abstract: A method of operating an eMMC system includes receiving a first command defining a first operation from the host, and storing the first command in a first command register among N command registers, and receiving a second command defining a second operation from the host, and storing the second command in a second command register among the N command registers, wherein the second command is received while the first operation is being performed.

Abstract: An image processing system includes a host that generates continuous shooting image data (CSID), and a flash storage device including a memory cell array including a first memory region and a second memory region. A portion of the first memory region is a dedicated CSID buffer region that temporarily stores only CSID. The second memory region stores normal data provided to the flash storage device by the host during a normal program operation. The first memory region supports data access operations including the normal program operation performed at a first speed, and the second memory region supports data access operations performed at a second speed slower than the first speed.

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

Abstract: An apparatus and method for reorganizing mapping information in a flash memory are provided. The apparatus includes a sector-managing module that secures a mapping sector where mapping information is recorded in a physical unit, and determines whether user data is recorded up to a sector located in a predetermined position, and a mapping-information-recording module that records the mapping information in the mapping sector according to a result of the determination. Here, the mapping information includes a relation of a physical sector storing the user data and a logical sector corresponding to the physical sector.

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

Abstract: An memory device including a data region storing a main data, a first index region storing a count data, and a second index region storing an inverted count data, where the data region, the first index region, and the second index region are included in one logical address.

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

Abstract: A semiconductor memory device includes adjacent planes and a control module. The adjacent planes include a reserve field and a data field having multiple blocks. The blocks of each of the reserve and data fields are successively arranged over the adjacent planes to form a multi-plane operation group. The control module is configured to control the adjacent planes to conduct a first operation or a second operation in accordance with whether the reserve field includes free blocks corresponding to a unit of the multi-plane operation group. The first operation includes replacing blocks of the data field with free blocks of the reserve field in the unit of the multi-plane operation group. The second operation includes replacing one block of the data field with one free block of the reserve field.

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

Abstract: An memory device including a data region storing a main data, a first index region storing a count data, and a second index region storing an inverted count data, where the data region, the first index region, and the second index region are included in one logical address.

Abstract: An apparatus for providing atomicity with respect to a request of a write operation for successive sectors in a flash memory is provided. The apparatus includes a data write module writing data in a main sector of a page and allocating status bits indicating a status of the data write to a spare sector of the page, a write progress managing module overwriting a commit mark in the spare sector allocated with the status bits according to a progress status of the data write, and a validity determining module determining validity of the sectors on the basis of the overwritten commit mark and providing information of the successive sectors.