Abstract: A liquid-phase epitaxy system having an LPE boat which consists of a slider section, a source holder section, and a contacting well section, in which the distance between the first two contacting wells is different from that between the first two source holding wells, so that the concentration of the solutions can be controlled by a proper temperature profile, since the solution for melt-etching and the remaining solution for the epitaxial growth are not deposited into the contact wells at the same time. This permits in-situ melt-etching and improvement in the quality of the epitaxial layer and the epitaxial yield by minimizing the contamination of the melt-etched surface of the substrate.

Abstract: A manufacturing method of a laser diode and a laser diode array is disclosed. A current blocking layer is very thinly grown on the surface of a mesa-like structure provided in a semiconductor substrate due to certain growing characteristics when forming the current blocking layer on the surface of a semiconductor substrate. Therefore, a channel is formed by utilizing the characteristic that GaAs is etched faster than AlGaAs when melt-etched by an unsaturated melted source. A first cladding layer and epitaxial layers are subsequently formed. The channel is easily formed by melt-etching because the current blocking layer is thinly formed on the surface of a reverse mesa-like structure of the semiconductor substrate. Also, a desired operation mode is freely determinable by controlling the Al mole concentration of the current blocking layer. In manufacturing the laser diode and laser diode array, melt-etching for forming the current blocking layers is performed by one epitaxy step.

Abstract: The liquid-phase epitaxy system having the LPE boat consists of of a slider section, a source holder section, and a contacting well section, in which the distance between the first two contacting wells is different from that between the first two source holding wells, so that the concentration of the solutions can be controlled by the proper temperature profile, since the solution for melt-etch and the remaining solution for the epitaxial growth are not filled into the contacting wells at the same time.Thus, the present invention can easily perform the in-situ melt-etch and can improve the quality of the epitaxial layer and the epitaxial yield by minimizing the contamination of the melt-etched surface of the substrate.