Abstract: The present invention relates to a process chamber and to a substrate processing device. The process chamber according to one embodiment of the present invention includes: a boat in which a plurality of substrates are vertically stacked apart from each; a chamber housing which raises the boat in order to position the boat in an inner space and horizontally injects a process gas from the sidewall and causes the process gas to flow between the substrates which are stacked apart from each other so as to discharge the process gas; a boat elevation unit which elevates the boat into the chamber housing; and a substrate transfer gate at which one side wall of the chamber housing is penetrated.

Abstract: The present invention relates to a process chamber which includes a substrate heating device. The substrate heating device of the process chamber according to one embodiment of the present invention has a boat in which a plurality of substrates are stacked apart from each other, and a chamber housing in which the boat is positioned in an inner space for process gas to flow between the substrates which are stacked apart from each other on the inner side wall, and the present invention includes a first heating body which generates heat in the lower portion of the boat to heat the substrate. Moreover, the boat comprises an upper plate, a lower plate, a plurality of support bars connecting the upper plate with the lower plate, and a plurality of substrate seat grooves formed on the side walls of the support bars.

Abstract: A substrate processing apparatus includes a chamber having an inner space where a process is carried out with respect to a substrate and an exhaust unit for exhausting substance in the inner space to the outside. The exhaust unit includes a first exhaust plate located at an upstream of an exhaust path of the substance, the first exhaust plate having first exhaust holes, and a second exhaust plate located at a downstream of the exhaust path, the first exhaust plate having second exhaust holes. The first exhaust plate is disposed outside a support member, and the second exhaust plate is disposed below the first exhaust plate generally in parallel to the first exhaust plate. The exhaust unit further includes first covers for selectively opening and closing the first exhaust holes and second covers for selectively opening and closing the second exhaust holes.

Abstract: A substrate processing apparatus includes a chamber having an inner space where a process is carried out with respect to a substrate and an exhaust unit for exhausting substance in the inner space to the outside. The exhaust unit includes a first exhaust plate located at an upstream of an exhaust path of the substance, the first exhaust plate having first exhaust holes, and a second exhaust plate located at a downstream of the exhaust path, the first exhaust plate having second exhaust holes. The first exhaust plate is disposed outside a support member, and the second exhaust plate is disposed below the first exhaust plate generally in parallel to the first exhaust plate. The exhaust unit further includes first covers for selectively opening and closing the first exhaust holes and second covers for selectively opening and closing the second exhaust holes.

Abstract: A showerhead includes a first ring having an inner spray port formed therein, a second ring configured to surround the first ring, the second ring being disposed outside the first ring such that the second ring is spaced apart from the first ring, and a connection member for interconnecting the first ring and the second ring. An outer spray port is formed between the first ring and the second ring. The showerhead further includes a third ring disposed in the inner spray port formed in the first ring and a fourth ring disposed in the outer spray port formed between the first ring and the second ring. The third ring has an innermost spray port formed therein, and the fourth ring has an outermost spray port formed at the outside thereof.

Abstract: A substrate processing apparatus includes a chamber defining an inner space where a process is carried out with respect to a substrate, a support member disposed in the chamber for supporting the substrate, and a guide tube disposed above the support member for guiding plasma generated in the inner space to the substrate on the support member. The guide tube is configured in the shape of a cylinder having a sectional shape substantially corresponding to the shape of the substrate, and the guide tube discharges the plasma introduced through one end thereof to the support member through the other end thereof. The chamber includes a process chamber in which the support member is disposed and a generation chamber disposed above the process chamber. The process is carried out by the plasma in the process chamber, and the plasma is generated by a coil in the generation chamber.