Abstract: A pad manufacturing process applied in LED epiwafer and a new construction thereof comprising of a means to increase interfacial bonding strength being provided first to the surface of the epiwafer; followed with a metal deposition means provided to the surface of the epiwafer by having the surface processed with plasma to improve adhesion between pad and epiwafer; and plating conditions being controlled to obtain finer and more uniform grains to correct the problem of pad surface roughness in order to improve the bonding strength between pad and bonding wire. Furthermore, a new construction of epiwafer and a pad is comprised of an epiwafer containing a substrate, an epitaxial layer, and a first metal layer covering the top of the epitaxial layer; an adhesion layer covering the top of the first metal layer; and a pad covering the top of the adhesion layer in sequence.

Abstract: A testing method for testing an integrated circuit device includes the steps of forming compliant bumps on bonding pads on a substrate of the device such that each of the compliant bumps has a polymeric body formed on a corresponding one of the bonding pads and a metal layer formed on the polymeric body, and such that the metal layer has a probe-contacting surface formed with a plurality of recesses, and testing electrical continuity between the metal layer of each of the compliant bumps and a corresponding circuit of the device by contacting a probe of a testing apparatus with the recessed probe-contacting surface of the metal layer.